Source/drain junction formation

1. A device, comprising:

a first channel region;

a first gate structure over the first channel region;

a first source/drain region adjacent the first channel region, wherein the first source/drain region comprises a crystalline structure doped with a first dopant; and

a first silicide formed over the first source/drain region,

wherein the first source/drain region comprises a first concentration of the first dopant at a first depth of 8 to 10 nm between 2.0×10 21 atoms per cm 3 and 4.0×10 21 atoms per cm 3 , wherein a gradient of decreasing concentration of the first dopant is one decade for every 5.5 to 7.5 nm deeper than the first depth.

2. The device of claim 1 , wherein the first dopant is an n-type impurity.

3. The device of claim 1 , wherein the first silicide has a thickness of 8 to 10 nm.

4. The device of claim 3 , wherein the first depth corresponds to an interface between the first source/drain region and the first silicide.

5. The device of claim 1 , further comprising:

a second channel region;

a second gate structure formed over the second channel region;

a second source/drain region adjacent the second channel region, wherein the second source/drain region comprises a crystalline structure doped with a second dopant different than the first dopant; and

a second silicide formed over the second source/drain region,

wherein the second source/drain region comprises a second concentration of the second dopant at a second depth of 8 to 10 nm between 3.0×10 15 atoms per cm 3 and 1.0×10 16 per cm 3 , wherein a gradient of decreasing concentration of the second dopant is about one decade for every 0.5 nm deeper than the second depth.

6. The device of claim 5 , wherein the second dopant is a p-type dopant.

7. The device of claim 5 , wherein the second depth corresponds to an interface between the second source/drain region and the second silicide.

8. The device of claim 1 , wherein a concentration of first dopant at the first depth is a peak concentration of the first dopant in the first source/drain region.

9. The device of claim 1 , wherein at least a portion of the first depth is vertically above a topmost point of the first channel region.

10. A semiconductor device, comprising:

a first gate over a substrate;

a first source/drain region adjacent the first gate, the first source/drain region comprising an epitaxial semiconductor material doped with a first impurity at a first concentration, the first impurity being a p-type impurity; and

a first silicide on the first source/drain region, the first silicide having a thickness of 8 to 10 nm, wherein a second concentration of the first impurity at a first interface of the first silicide and first source/drain region is between 3.0×10 15 atoms per cm 3 and 1.0×10 16 per cm 3 , wherein a gradient of a concentration of the first impurity in the first source/drain region decreases at about 1 decade per 0.5 nm depth from the first interface.

11. The semiconductor device of claim 10 , wherein the first source/drain region is in a fin of a Fin Field Effect transistor (FinFET).

12. The semiconductor device of claim 10 , wherein the first impurity is boron.

13. The semiconductor device of claim 10 , wherein the epitaxial semiconductor material of the first source/drain region is substantially repaired of defects.

14. The semiconductor device of claim 10 , wherein the first source/drain region has a second portion that protrudes above the substrate, wherein a portion of the first interface is above the substrate.

15. The semiconductor device of claim 10 , further comprising:

a second gate over the substrate;

a second source/drain region adjacent the second gate comprising an epitaxial semiconductor material doped with a second impurity at a third concentration, the second impurity being an n-type impurity; and

a second silicide formed on the second source/drain region, the second silicide having a thickness of 8 to 10 nm, wherein a fourth concentration of the second impurity at a second interface of the second silicide and the second source/drain region is between 2.0×10 21 atoms per cm 3 and 4.0×10 21 atoms per cm 3 , wherein a gradient of a concentration of the second impurity in the second source/drain region decreases at 1 decade per 5.5 to 7.5 nm depth from the second interface.

16. The semiconductor device of claim 15 , wherein the second impurity is phosphorous.

17. A semiconductor device comprising:

a substrate;

a first gate over the substrate;

a first source/drain adjacent the first gate, the first source/drain doped with a first dopant;

a second gate formed over the substrate;

a second source/drain adjacent the second gate, the second source/drain doped with a second dopant;

a first concentration of first dopant in the first source/drain, the first concentration being at a depth of 8 to 10 nm, wherein a concentration of first dopant at the first concentration is between 2.0×10 21 atoms per cm 3 and 4.0×10 21 atoms per cm 3 , wherein the concentration of first dopant decreases deeper from the first concentration at a first abruptness, wherein the first abruptness corresponds to one decade concentration for every 5.5 to 7.5 nm; and

a second concentration in the second source/drain, the second concentration being at a depth of 8 to 10 nm, wherein a concentration of second dopant at the second concentration is between 3.0×10 15 atoms per cm 3 and 1.0×10 16 atoms per cm 3 .

18. The semiconductor device of claim 17 , further comprising:

a first silicide formed over the first source/drain, the first silicide having a thickness of 8 to 10 nm; and

a second silicide formed over the second source/drain, the second silicide having a thickness of 8 to 10 nm.

19. The semiconductor device of claim 18 , wherein the first concentration corresponds to an interface between the first silicide and the first source/drain, and wherein the second concentration corresponds to an interface between the second silicide and second source/drain.

20. The semiconductor device of claim 17 , wherein the concentration of second dopant decreases deeper from the second concentration at a second abruptness, wherein the second abruptness corresponds to about one decade concentration for every 0.5 nm.