Organic light emitting diode and display device including the same

1. An organic light emitting diode, comprising:

a cathode electrode;

an anode electrode positioned above the cathode electrode;

an emitting layer positioned between the cathode electrode and the anode electrode;

an electron transporting unit positioned between the cathode electrode and the emitting layer, and configured to inject and transport electrons to the emitting layer; and

a buffer layer disposed between the cathode electrode and the electron transporting unit, and including an organic layer and a metallic layer disposed on the organic layer, wherein the organic layer of the buffer layer is in direct contact with the cathode electrode, and wherein the metallic layer of the buffer layer is spaced apart from the cathode electrode.

2. The organic light emitting diode of claim 1 , wherein the electron transporting unit includes:

an electron transporting layer positioned between the cathode electrode and the emitting layer; and

an electron injecting layer positioned between the cathode electrode and the electron transporting layer.

3. The organic light emitting diode of claim 2 , wherein the organic layer includes a same material as a material included in any one of a hole injecting layer or the electron transporting layer.

4. The organic light emitting diode of claim 2 , wherein the organic layer includes a first base layer including a same material as a material included in the electron injecting layer, and a second base layer including a same material as a material included in the electron transporting layer.

5. The organic light emitting diode of claim 1 , wherein the metallic layer includes any one of silver (Ag), aluminum (Al), magnesium (Mg), ytterbium (Yb), samarium (Sm), or an alloy thereof.

6. The organic light emitting diode of claim 1 , wherein the buffer layer has a thickness of from about 0.1 nm to about 20 nm.

7. The organic light emitting diode of claim 1 , further comprising:

a hole transporting unit positioned between the emitting layer and the anode electrode.

8. The organic light emitting diode of claim 7 , wherein the hole transporting unit includes:

a hole transporting layer positioned between the emitting layer and the anode electrode; and

a hole injecting layer positioned between the hole transporting layer and the anode electrode.

9. The organic light emitting diode of claim 8 , wherein the hole injecting layer includes a p-type dopant.

10. The organic light emitting diode of claim 9 , wherein in the hole injecting layer, a doping range of the p-type dopant is from about 0.5% to about 10%.

11. The organic light emitting diode of claim 9 , wherein the hole injecting layer has a thickness of about 15 nm or more.

12. A display device, comprising:

a substrate;

at least one thin film transistor positioned above the substrate; and

an organic light emitting diode connected to the thin film transistor,

wherein the organic light emitting diode includes:

a cathode electrode connected to the thin film transistor;

an anode electrode positioned above the cathode electrode;

an emitting layer positioned between the cathode electrode and the anode electrode;

an electron transporting unit positioned between the cathode electrode and the emitting layer, and configured to inject and transport electrons to the emitting layer; and

a buffer layer disposed between the cathode electrode and the electron transporting unit, and including an organic layer and a metallic layer disposed on the organic layer, wherein the organic layer of the buffer layer is in direct contact with the cathode electrode, and wherein the metallic layer of the buffer layer is spaced apart from the cathode electrode.

13. The display device of claim 12 , wherein the organic layer includes a same material as a material included in the electron transporting unit.

14. The display device of claim 12 , wherein the metallic layer includes any one of silver (Ag), aluminum (Al), magnesium (Mg), ytterbium (Yb), samarium (Sm), or an alloy thereof.

15. An organic light emitting diode, comprising:

a cathode electrode;

a buffer layer disposed on the cathode electrode;

an electron injecting layer disposed on the buffer layer;

an electron transporting layer disposed on the electron injecting layer;

an emitting layer disposed on the electron transporting layer;

a hole transporting layer disposed on the emitting layer;

a hole injecting layer disposed on the hole transporting layer; and

an anode electrode disposed on the hole injecting layer,

wherein the buffer layer includes an organic layer and a metallic layer disposed on the organic layer, wherein the organic layer includes a first base layer including a same material as a material included in the electron injecting layer, and a second base layer including a same material as a material included in the electron transporting layer, and wherein the first base layer is in direct contact with the cathode electrode.

16. The organic light emitting diode of claim 15 , wherein the buffer layer has a thickness of from about 0.1 nm to about 20 nm.

17. The organic light emitting diode of claim 15 , wherein the hole injecting layer includes p-type dopant.

18. The organic light emitting diode of claim 17 , wherein in the hole injecting layer, a doping range of the p-type dopant is from about 0.5% to about 10%.

19. The organic light emitting diode of claim 15 , wherein the hole injecting layer has a thickness of about 15 nm or more.

20. The organic light emitting diode of claim 4 , wherein the second base layer is in direct contact with the first base layer.