Metrology system and measurement method using the same
A method for thickness measurement includes forming an implantation region in a semiconductor substrate. A semiconductor layer is formed on the implantation region of the semiconductor substrate. Modulated free carriers are generated in the implantation region of the semiconductor substrate. A probe beam is provided on the semiconductor layer and the implantation region of the semiconductor substrate with the modulated free carriers therein. The probe beam reflected from the semiconductor layer and the implantation region is detected to determine a thickness of the semiconductor layer.
1. A method for thickness measurement comprising:
forming an implantation region in a semiconductor substrate;
after forming the implantation region in the semiconductor substrate, forming a semiconductor layer on the implantation region of the semiconductor substrate;
after forming the semiconductor layer on the implantation region, generating modulated free carriers in the implantation region of the semiconductor substrate, wherein the generating the modulated free carriers comprises:
providing a pump beam;
intensity modulating the pump beam into a modulated pump beam; and
directing the modulated pump beam to impinge on the implantation region of the semiconductor substrate to generate the modulated free carriers;
providing a probe beam on the semiconductor layer and the implantation region of the semiconductor substrate with the modulated free carriers therein; and
detecting the probe beam reflected from the semiconductor layer and the implantation region to determine a thickness of the semiconductor layer.
2. The method of claim 1 , wherein the semiconductor substrate and the semiconductor layer are formed of substantially the same material.
3. The method of claim 1 , wherein a dielectric constant of the semiconductor substrate and a dielectric constant of the semiconductor layer have a difference less than about 10 −2 .
4. The method of claim 1 , further comprising:
annealing the implantation region of the semiconductor substrate.
5. The method of claim 1 , wherein the semiconductor layer is formed by using an epitaxy process.
6. The method of claim 1 , wherein the pump beam is a laser beam.
7. The method of claim 1 , wherein the pump beam and the probe beam have different wavelengths.
8. The method of claim 1 , wherein the probe beam is a laser beam.
9. The method of claim 1 , wherein the implantation region is a p-type implantation region.
10. The method of claim 1 , wherein the implantation region is an n-type implantation region.
11. The method of claim 1 , wherein the semiconductor substrate and the semiconductor layer have substantially the same optical properties.
12. A method for thickness measurement comprising:
doping a semiconductor substrate to form a doped region therein;
annealing the doped region;
growing a semiconductor layer on the doped region of the semiconductor substrate;
providing a photomodulating beam to photomodulate the doped region of the semiconductor substrate, wherein the providing a photomodulating beam comprises:
providing a pump beam;
intensity modulating the pump beam into the photomodulating beam; and
directing the photomodulating beam to impinge on the doped region of the semiconductor substrate to generate modulated free carriers;
while providing a photomodulating beam, providing a probe beam on the semiconductor layer and the photomodulated doped region, the probe beam being different from the photomodulating beam; and
evaluating a thickness of the semiconductor layer according to an interference information of the probe beam reflected from the semiconductor layer and the doped region.
13. The method of claim 12 , wherein the semiconductor layer is in contact with the semiconductor substrate.
14. The method of claim 12 , wherein a dielectric constant of the semiconductor substrate and a dielectric constant of the semiconductor layer have a difference less than about 10 −2 .
15. The method of claim 12 , wherein the semiconductor substrate and the semiconductor layer have substantially the same optical properties.
16. A metrology system comprising:
an implantation apparatus configured to form an implantation region in a semiconductor substrate;
a deposition apparatus configured to form a semiconductor layer on the implantation region of the semiconductor substrate; and
a metrology apparatus, comprising:
a photomodulation source configured to generate modulated free carriers in the implantation region of the semiconductor substrate, wherein the photomodulation source comprises:
a light source configured to provide a pump beam; and
a modulator configured to modulate an intensity of the pump beam into a modulated pump beam and direct the modulated pump beam to impinge on the implantation region of the semiconductor substrate to generate the modulated free carriers;
a probe source configured to provide a probe beam on the semiconductor layer and the implantation region, the probe beam being provided simultaneously with the generation of modulated free carriers in the implantation region; and
a detector configured to detect the probe beam reflected from the semiconductor layer and the implantation region to determine a thickness of the semiconductor layer.
17. The metrology system of claim 16 , further comprising:
an annealing apparatus configured to anneal the implantation region of the semiconductor substrate.
18. The metrology system of claim 16 , wherein the light source is a laser.
19. The metrology system of claim 16 , wherein the probe source is a laser.
20. The metrology system of claim 16 , wherein the pump beam and the probe source have different wavelengths.