Methods of forming one or more covered voids in a semiconductor substrate
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
1. A method of forming a covered void in a semiconductor substrate, comprising:
forming a pair of projections projecting upwardly from a semiconductor substrate, the projections comprising sidewalls;
providing elemental-form silicon atop the pair of projections; and
selectively growing relative to at least portions of the projection sidewalls at least one of elemental-form W or a silicide from the elemental-form silicon to bridge across the pair of projections to form a covered void between the pair of projections.
2. The method of claim 1 wherein the selectively growing comprises selectively growing elemental-form W.
3. The method of claim 1 wherein the selectively growing comprises selectively growing a silicide.
4. The method of claim 1 comprising providing the elemental-form silicon to comprise amorphous silicon.
5. The method of claim 1 comprising providing the elemental-form silicon to comprise monocrystalline silicon.
6. The method of claim 1 comprising forming the pair of projections to comprise spaced free-standing pillars prior to said selectively growing.