Method for fabricating junctions and spacers for horizontal gate all around devices
The present disclosure provides methods for forming horizontal gate-all-around (hGAA) structure devices. In one example, a method includes selectively and laterally etching a first group of sidewalls of a first layer in a multi-material layer, wherein the multi-material layer comprises repeating pairs of the first layer and a second layer, the first and the second layers having the first group and a second group of sidewalls respectively, the first group of sidewalls from the first layer exposed through openings defined in the multi-material layer and a group of inner spacers formed atop of the second group of sidewalls from the second layer, forming a recess from the first group of sidewalls of the first layer and defining a vertical wall inward from an outer vertical surface of the inner spacer formed atop of the second layers, and forming an epi-silicon layer from the recess of the first layer.
1. A method of forming nanowire structures and source/drain regions on a substrate comprising:
selectively and laterally etching a first group of sidewalls of a first layer in a multi-material layer, wherein the multi-material layer comprises repeating pairs of the first layer and a second layer, the first and the second layers having the first group and a second group of sidewalls respectively, the first group and the second groups of sidewalls from the first layer and the second layer respectively exposed through openings defined in the multi-material layer;
forming a recess from the first group of sidewalls of the first layer and defining a vertical wall inward from the second group of sidewalls of the second layers;
forming a doping layer over the multi-material layer filling the recess defined in the first layer, wherein the doping layer comprises group III or group V dopants doped therein;
performing a thermal annealing process to drive the dopants from the doping layer into the second layer;
forming a dopant diffusion region in the second layer;
removing the doping layer from the substrate after the dopant diffusion region is formed in the second layer; and
exposing the recess of the first layer.
2. The method of claim 1 , further comprising:
forming an epi-silicon layer atop of sidewalls of the dopant diffusion region in the second layer.
3. The method of claim 2 , wherein the epi-silicon layer is utilized as source/drain regions in horizontal gate-all-around (hGAA) structures.
4. The method of claim 1 , further comprising:
forming an inner spacer in the recess of the first layer; and
forming an epi-silicon layer atop of sidewalls of the dopant diffusion region in the second layer.
5. The method of claim 4 , further comprising:
forming an air gap atop of the inner spacer in the first layer.
6. The method of claim 1 , wherein the doping layer is a boron doped silicon containing layer or a phosphate doped silicon containing layer.