Large-area wafer-scale CMOS-compatible 2D-material intercalation doping tools, processes, and methods, including doping of synthesized graphene
An intercalation doping apparatus including: a reactor chamber where single or multiple wafers or substrates (SoMWoSubs) are disposed within the reactor chamber, where SoMWoSubs have a diameter or a side distance from 25 mm to 450 mm; a heater, where the heater is configured to provide heat to the SoMWoSubs disposed within the reactor chamber, where the SoMWoSubs include a temperature from 25° C. to 500° C.; where pressure is applied to at least one surface of the SoMWoSubs disposed within the reactor chamber within a range of 2 bar to 500 bar; and a dopant application apparatus, where the dopant application apparatus includes at least valves and tubing which bring dopants from outside to within the reactor chamber and includes at least a dopant crucible disposed within the reactor chamber, where the dopants include material in solid, liquid, or gaseous phase, and where the dopants include intercalation doping agents.
1 . A method of accelerated intercalation doping by insertion of dopant atoms, ions, or molecules into layered 2D materials, said method comprising:
loading single or multiple wafers or substrates into a reactor chamber, wherein the single or multiple wafers or substrates comprise a diameter or side distance in the range of 25 mm to 450 mm, wherein the single or multiple wafers or substrates comprise multi-layer graphene strips, wherein the multi-layer graphene strips comprise exposed layer edges, wherein the multi-layer graphene strips each comprise two or more graphene layers, wherein each of the graphene layers consists of a single layer of atoms;
heating the single or multiple wafers or substrates to a temperature of 25° C. to 500° C.;
creating pressure on the single or multiple wafers or substrates in the range of 2 bar to 500 bar; and
introducing intercalation doping agents into the reactor chamber to insert the intercalation dopants between the two or more graphene layers via the exposed layer edges.
2 . The method according to claim 1 , wherein said introducing comprises accelerating atoms or molecules of the intercalation dopants via pressure, temperature or electrical bias.
3 . The method according to claim 1 , wherein said heating, creating and introducing are maintained for a specified time, and
wherein said specified time is at least one half of a maximum width of the graphene strips divided by a speed of intercalation doping.
4 . The method according to claim 1 , wherein said creating creates the pressure via gaseous pressure.
5 . The method according to claim 1 , wherein said creating creates the pressure via mechanical pressure.
6 . The method according to claim 1 , wherein the single or multiple wafers or substrates comprise layered 2D materials.
7 . The method according to claim 1 , wherein said introducing is conducted via a dopant application apparatus.
8 . The method according to claim 1 , wherein a space between parallel ones of the exposed layer edges is equal to or greater than 10 times the diameter of a molecule, ion, or atom of said intercalant dopant.
9 . The method according to claim 1 , wherein said introducing comprises injecting dopant gas into the reactor chamber.
10 . The method according to claim 1 , wherein said introducing comprises hosting liquid or solid dopants in a crucible within the reactor chamber.
11 . The method according to claim 1 , wherein the reactor chamber is vertically oriented and the single or multiple wafers or substrates are horizontally oriented.
12 . The method according to claim 1 , said introducing comprises hosting liquid or solid dopants in a crucible in a separate chamber connected to the reactor chamber and heating the crucible to a different temperature than the single or multiple wafers or substrates.
13 . The method according to claim 1 , wherein the multi-layer graphene strips comprise one or more interconnect structures on the single or multiple wafers or substrates.