Direct bandgap semiconductor bonded to silicon photonics

1. A method comprising:

receiving an assembly comprising a silicon photonics (SiP) wafer bonded to a complementary metal-oxide-semiconductor (CMOS) wafer, wherein the SiP wafer includes photonics circuitry and the CMOS wafer includes electronic circuitry; and

after receiving the assembly:

bonding a direct bandgap (DBG) semiconductor structure to the SiP wafer such that the SiP wafer is disposed between the CMOS wafer and the DBG semiconductor structure;

optically coupling the direct bandgap (DBG) semiconductor structure to the photonics circuitry; and

electrically connecting the DBG semiconductor structure to the electronic circuitry of the CMOS wafer.

2. The method of claim 1 wherein the SiP wafer comprises a photonics layer including the photonics circuitry and an electrical interconnect layer including an electrically conductive line embedded in electrically insulating material; the electrically conductive line connecting the electronic circuitry of the CMOS wafer with the photonics circuitry in the photonics layer.

3. The method of claim 1 wherein electrically connecting the DBG semiconductor structure to the electronic circuitry of the CMOS wafer includes connecting an electrical contact of the DBG semiconductor structure with a via which extends at least partially through the SiP wafer.

4. The method of claim 1 wherein the DBG semiconductor structure includes an active layer and at least one cladding layer.

5. The method of claim 1 comprising processing the DBG semiconductor structure to form a laser, a photodiode, an optical modulator, an optical amplifier or another type of active photonics device.

6. The method of claim 5 wherein the processing includes etching the DBG semiconductor structure to form an optical structure to confine light in an active region of the DBG semiconductor structure.

7. The method of claim 1 wherein the DBG semiconductor structure includes a group III-V material.

8. The method of claim 1 wherein the bonding of the DBG semiconductor structure to the SiP wafer is by molecule bonding.

9. The method of claim 1 comprising forming an optical path to couple the DBG semiconductor structure to the photonics circuitry, the optical path including at least one of an evanescent coupling structure, a grating, a mirror and an angled facet.

10. The method of claim 1 comprising bonding a SiP wafer to a CMOS wafer to form the assembly.

11. The method of claim 10 comprising, after bonding the SiP wafer to the CMOS wafer, removing a silicon substrate of the SiP wafer.

12. The method of claim 10 comprising, after bonding the SiP wafer to the CMOS wafer, thinning or removing a dielectric layer of the SiP wafer.

13. The method of claim 1 wherein the SiP wafer includes a plurality of photonic integrated chips, the CMOS wafer includes a plurality of electronic integrated chips and bonding the DBG semiconductor structure to the SiP wafer includes bonding a DBG wafer comprising a plurality of DBG semiconductor structures to the SiP wafer; and wherein the method includes optically coupling each respective DBG semiconductor structure to a respective photonic integrated chip.

14. A hybrid photonics electronics integrated chip comprising:

a complementary metal-oxide-semiconductor (CMOS) layer including electronic control circuitry;

a silicon photonics (SIP) layer bonded to the CMOS layer, the SiP layer including photonics circuitry;

a direct bandgap (DBG) semiconductor layer bonded to the SiP layer such that the SiP layer is disposed between the CMOS layer and the DBG semiconductor layer, the DBG semiconductor layer including a DBG semiconductor photonics device which is optically coupled to the photonics circuitry of the SiP layer; and

an electrically conductive line connecting the electronic circuitry of the CMOS layer to the photonics circuitry or to an electrical contact of the DBG semiconductor photonics device.

15. The integrated chip of claim 14 wherein the electrically conductive line includes a via which extends at least partially through the SiP layer and connects the electronic circuitry in the CMOS layer with the electrical contact of the DBG semiconductor photonics device.

16. The integrated chip of claim 14 wherein the SiP layer includes a photonics layer that includes the photonics circuitry, an electrically insulating layer which is positioned under the photonics layer and above the CMOS layer; and a plurality of electrically conductive lines embedded in the electrically insulating layer and connecting the electronic circuitry of the CMOS layer with the photonics circuitry and with the DBG semiconductor photonics device.

17. The integrated chip of claim 14 comprising a structure to couple light vertically between the DBG semiconductor photonics device and the photonics circuitry in the SiP layer.

18. A hybrid photonics-electronics wafer assembly comprising:

a complementary metal-oxide-semiconductor (CMOS) wafer including a plurality of electronic integrated circuits;

a silicon photonics (SiP) wafer bonded to the CMOS wafer, the SiP wafer including a plurality of photonic integrated circuits;

a direct bandgap (DBG) semiconductor wafer bonded to the SiP wafer such that the SiP wafer is disposed between the CMOS wafer and the DBG semiconductor wafer, the DBG semiconductor wafer including a plurality of photonic devices;

wherein each respective photonic device of the DBG semiconductor wafer is optically coupled to a respective photonic integrated circuit of the SiP wafer.

19. The hybrid photonics-electronics wafer assembly of claim 18 wherein each photonic device of the direct bandgap semiconductor wafer is electrically coupled to a respective electronic integrated circuit of the CMOS wafer.

20. The hybrid photonics-electronics wafer assembly of claim 18 wherein each photonic integrated circuit of the SIP wafer is electrically coupled to a respective electronic integrated circuit of the CMOS wafer.