Apparatus and techniques for anisotropic substrate etching
A method may include generating a plasma in a plasma chamber, the plasma comprising an etchant species and extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, where the pulsed ion beam comprises an ON portion and an OFF portion. During the OFF portion the substrate may not be biased with respect to the plasma chamber, and the duration of the OFF portion may be less than a transit time of the etchant species from the plasma chamber to the substrate.
1. A method, comprising:
generating a plasma in a plasma chamber, the plasma comprising an etchant species; and
extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, the pulsed ion beam comprising an ON portion and an OFF portion,
wherein during the OFF portion the substrate is not biased with respect to the plasma chamber, and
wherein a duration of the OFF portion is less than a transit time of the etchant species from the plasma chamber to the substrate.
2. The method of claim 1 , wherein the plasma is generated by providing RF power to the plasma chamber, the method further comprising adjusting a level of RF power of the plasma in concert with the pulsed ion beam, wherein the plasma comprises a first RF power level during the ON portion and a second RF power level during the OFF portion, wherein the first RF power level is higher than the second RF power level.
3. The method of claim 2 , wherein the second RF power level is adequate to sustain the plasma.
4. The method of claim 1 , wherein the etchant species is a thermal neutral species.
5. The method of claim 1 , wherein the etchant species comprises at least one of chlorine neutrals and chlorine ions.
6. The method of claim 1 , comprising:
setting a separation between the plasma chamber and the substrate, wherein the transit time of the etchant species is proportional to the separation; and
setting the duration of the OFF portion to be less than the transit time.
7. The method of claim 6 , wherein the separation is at least 6 mm.
8. The method of claim 1 , wherein a duty cycle of the pulsed ion beam is 50% or less.
9. The method of claim 1 , wherein a frequency of the pulsed ion beam is 10 kHz or less.
10. The method of claim 1 , wherein the extracting the pulsed ion beam comprises:
providing an extraction plate having at least one extraction aperture, disposed between the plasma chamber and the substrate; and
generating a pulsed extraction voltage between the substrate and the plasma chamber.
11. The method of claim 10 , wherein the pulsed ion beam comprises ions having a trajectory that extends along a perpendicular to a plane of the substrate.
12. A method of etching a substrate to form a surface feature, comprising:
providing a chlorine-containing gas to a plasma chamber;
generating a plasma in the plasma chamber, the plasma comprising an etchant species derived from the chlorine-containing gas;
extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to the substrate, the pulsed ion beam comprising an ON portion and an OFF portion; and
pulsing a level of RF power of the plasma in concert with the pulsed ion beam, wherein the plasma comprises a first RF power level during the ON portion and a second RF power level during the OFF portion, wherein the first RF power level is higher than the second RF power level,
wherein a duration of the OFF portion is less than a transit time of the etchant species from the plasma chamber to the substrate.
13. The method of claim 12 , wherein the etchant species comprises chlorine neutrals.
14. The method of claim 12 , comprising:
setting a separation between the plasma chamber and the substrate, wherein the transit time of the etchant species is proportional to the separation; and
setting the duration of the OFF portion to be less than the transit time.
15. The method of claim 14 , wherein the separation is at least 6 mm, wherein a duty cycle of the pulsed ion beam is 50% or less, and wherein a frequency of the pulsed ion beam is 10 kHz or less.
16. The method of claim 12 , wherein during the OFF portion the substrate is not biased with respect to the plasma chamber.
17. The method of claim 12 , wherein the surface feature comprises a plurality of layers forming a phase change memory.