Organic light emitting display device and method of manufacturing an organic light emitting display device

1. An organic light emitting display (OLED) device, comprising:

a substrate comprising a display region and a peripheral region;

a conductive layer disposed in the peripheral region on the substrate and including an opening portion exposing at least a portion of the substrate, the conductive layer having an undercut shape;

an insulation layer disposed on the conductive layer, the insulation layer including an opening that exposes the opening portion; and

a common layer disposed in both the display region and the peripheral region on the insulation layer and on the substrate exposed by the opening portion,

wherein the common layer disposed on the substrate exposed by the opening portion is spaced apart from the common layer disposed on the insulation layer.

2. The OLED device of claim 1 , wherein a thickness of the conductive layer is greater than a thickness of the common layer.

3. The OLED device of claim 1 , wherein at least a portion of a bottom surface of the insulation layer disposed on the conductive layer is exposed by the opening portion.

4. The OLED device of claim 1 , further comprising:

a switching structure disposed in the display region on the substrate, the switching structure comprising an active pattern, a first gate electrode, a source electrode and a drain electrode, wherein the active pattern and the first gate electrode are sequentially stacked on the substrate;

an insulation structure disposed on the substrate, the insulation structure comprising a first gate insulation layer disposed between the active pattern and the first gate electrode, and an insulation interlayer disposed between the first gate electrode and the source and the drain electrodes;

an organic light emitting structure disposed on the insulation structure, the organic light emitting structure comprising a pixel electrode, a display layer, and an opposing electrode sequentially stacked on the insulation structure; and

a capping layer disposed on the organic light emitting structure.

5. The OLED device of claim 4 , wherein the conductive layer is disposed on a same level as the first gate electrode on the substrate, and

wherein the insulation layer is disposed in a same layer as the insulation interlayer.

6. The OLED device of claim 4 , wherein the conductive layer and the pixel electrode are etched by a same etchant.

7. The OLED device of claim 4 , wherein the common layer corresponds to at least one of the display layer, the opposing electrode, and the capping layer.

8. The OLED device of claim 4 , wherein the switching structure further comprises a second gate electrode disposed between the first gate electrode and the source and the drain electrodes, and

wherein the insulation structure further comprises a second gate insulation layer disposed between the first gate electrode and the second gate electrode.

9. The OLED device of claim 8 , wherein the conductive layer is disposed on a same level as the first gate electrode on the substrate.

10. The OLED device of claim 9 , wherein the insulation layer in the peripheral region corresponds to the second gate insulation layer and the insulation interlayer in the display region.

11. The OLED device of claim 9 , wherein the insulation structure further comprises an additional insulation layer disposed on the insulation interlayer, the additional insulation layer comprising a material different from a material of the insulation interlayer, and

wherein the insulation layer corresponds to the second gate insulation layer, the insulation interlayer, and the additional insulation layer.

12. The OLED device of claim 8 , wherein the conductive layer is disposed on a same level as the second gate electrode on the substrate, and

wherein the insulation layer corresponds to the insulation interlayer.

13. The OLED device of claim 8 , wherein the insulation structure further comprises an additional insulation layer disposed on the source and the drain electrodes,

wherein the conductive layer is disposed on a same level as the source and the drain electrodes on the substrate, and

wherein the insulation layer corresponds to the additional insulation layer.

14. The OLED device of claim 8 , wherein the conductive layer comprises a first conductive layer and a second conductive layer disposed on the first conductive layer,

wherein the first conductive layer and the second conductive layer are disposed on a same level as the first gate electrode and the second gate electrode on the substrate, respectively, and

wherein the insulation layer corresponds to the insulation interlayer.

15. The OLED device of claim 8 , wherein the conductive layer comprises a first conductive layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer, and

wherein the insulation layer corresponds to the insulation interlayer.

16. The OLED device of claim 15 , wherein the first conductive layer and the second conductive layer are disposed on a same level as the first gate electrode and the second gate electrode on the substrate, respectively.

17. The OLED device of claim 15 , wherein the second conductive layer and the third conductive layer are disposed on a same level as the first gate electrode and the second gate electrode on the substrate, respectively.

18. A method of manufacturing an organic light emitting display (OLED) device, the method comprising:

forming a conductive layer in a peripheral region on a substrate;

forming an insulation layer on the substrate, the insulation layer covering the conductive layer;

etching the insulation layer to expose a portion of the conductive layer;

etching the conductive layer to form an opening portion in the conductive layer, the conductive layer having an undercut shape; and

forming a common layer on the insulation layer and on the substrate in the opening portion,

wherein the common layer formed on the substrate in the opening portion is spaced apart from the common layer formed on the insulation layer.

19. The method of claim 18 , further comprising:

forming a pixel electrode on the insulation layer and on the exposed portion of the conductive layer; and

etching the pixel electrode using an etchant,

wherein the pixel electrode and the conductive layer are simultaneously etched by the etchant.

20. The method of claim 18 , wherein a thickness of the conductive layer is greater than a thickness of the common layer.