Method of manufacturing oxide crystal thin film
There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.
1. A method for manufacturing an oxide crystal thin film, comprising
carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution comprising water and gallium bromide, and forming an oxide crystal thin film at a temperature of 440 to 530° C. on a sample on which films are to be formed, the sample being placed in the film forming chamber, wherein the carrier gas has a flow rate of 1 to 10 L/min, and the concentration of the gallium bromide of the raw material solution is 0.10 to 0.20 mol/L.
2. The method of claim 1 , wherein
the thin film comprises a crystal which is oriented to a certain crystal axis.
3. The method of claim 1 , wherein
the thin film has a corundum structure.
4. The method of claim 1 , wherein
the sample on which films are to be formed and the thin film each have a corundum structure.
5. The method of claim 1 , wherein
the raw material fine particles in the film forming chamber further comprises fine particles formed from another raw material solution comprising an aluminum organometallic complex.