IP Library › Granted Patent US 10,204,976
Granted Patent B2
US 10,204,976 · App. 15/900,715 · Granted Feb 12, 2019

Organic light emitting diode display

Inventors: Se-Ho Kim (Yongin-si, KR); Jin-Woo Park (Yongin-si, KR); Won-Se Lee (Yongin-si, KR)
Assignee: Samsung Display Co., Ltd.
H01L27/3276H01L27/3248H01L27/3258H01L27/3262H01L27/3265H01L27/3297G09G3/3225G09G2300/0809H01L27/124H01L27/1255
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Quick Facts
Patent No.
US 10,204,976
App. No.
15/900,715
Granted
Feb 12, 2019
Kind
B2
Abstract

An organic light emitting diode display includes a substrate, a scan line on the substrate for transferring a scan signal, a data line crossing the scan line and for transferring a data signal, a driving voltage line crossing the scan line and for transferring a driving voltage, a switching thin film transistor coupled to the scan line and the data line, a driving thin film transistor coupled to a switching drain electrode of the switching thin film transistor, and an organic light emitting diode (OLED) coupled to a driving drain electrode of the driving thin film transistor, wherein a driving semiconductor layer of the driving thin film transistor is bent and in a plane substantially parallel to the substrate.

Claims (61)

1. An organic light emitting diode display comprising:

a substrate;

a scan line on the substrate;

a data line;

a first thin film transistor electrically coupled to the scan line and the data line;

a voltage line;

an organic light emitting diode;

a second thin film transistor electrically coupled to the voltage line and the organic light emitting diode;

a third thin film transistor electrically coupled to the organic light emitting diode and the second thin film transistor, a semiconductor layer of the second thin film transistor and the third thin film transistor being integral in a body;

an insulating layer covering the second thin film transistor; and

a storage capacitor electrically coupled to a gate electrode of the second thin film transistor, the storage capacitor comprising:

a first storage capacitor plate comprising a portion of the gate electrode of the second thin film transistor;

a second storage capacitor plate overlapping the first storage capacitor plate; and

a portion of the insulating layer between the first storage capacitor plate and the second storage capacitor plate.

2. The organic light emitting diode display of claim 1 , further comprising a fourth thin film transistor electrically coupled to the voltage line and the second thin film transistor.

3. The organic light emitting diode display of claim 2 , wherein the semiconductor layer extends to and is electrically coupled to the fourth thin film transistor.

4. The organic light emitting diode display of claim 3 , wherein the semiconductor layer is bent.

5. The organic light emitting diode display of claim 1 , wherein the semiconductor layer of the second thin film transistor extends and is bent under the gate electrode of the second thin film transistor.

6. An organic light emitting diode display comprising:

a substrate;

a scan line on the substrate;

a data line;

a first thin film transistor electrically coupled to the scan line and the data line;

a voltage line;

an organic light emitting diode;

a second thin film transistor electrically coupled to the voltage line and the organic light emitting diode;

a third thin film transistor electrically coupled to the voltage line and the second thin film transistor, a semiconductor layer of the second thin film transistor and the third thin film transistor being integral in a body;

an insulating layer covering the second thin film transistor; and

a storage capacitor electrically coupled to a gate electrode of the second thin film transistor, the storage capacitor comprising:

a first storage capacitor plate comprising a portion of the gate electrode of the second thin film transistor;

a second storage capacitor plate overlapping the first storage capacitor plate; and

a portion of the insulating layer between the first storage capacitor plate and the second storage capacitor plate.

7. The organic light emitting diode display of claim 6 , further comprising a fourth thin film transistor electrically coupled to the organic light emitting diode and the second thin film transistor.

8. The organic light emitting diode display of claim 7 , wherein the semiconductor layer extends to the fourth thin film transistor.

9. The organic light emitting diode display of claim 8 , wherein the semiconductor layer is bent.

10. The organic light emitting diode display of claim 6 , wherein the semiconductor layer of the second thin film transistor extends and is bent under the gate electrode of the second thin film transistor.

11. An organic light emitting diode display comprising:

a substrate;

a scan line on the substrate;

a data line;

a first thin film transistor electrically coupled to the scan line and the data line;

a first voltage line;

an organic light emitting diode;

a second thin film transistor electrically coupled to the first voltage line and the organic light emitting diode;

a second voltage line;

a storage capacitor electrically coupled to a gate electrode of the second thin film transistor;

a third thin film transistor electrically coupled to the second voltage line and the storage capacitor, a semiconductor layer of the second thin film transistor and the third thin film transistor being integral in a body; and

an insulating layer covering the second thin film transistor,

wherein the storage capacitor comprises:

a first storage capacitor plate comprising a portion of the gate electrode of the second thin film transistor;

a second storage capacitor plate overlapping the first storage capacitor plate; and

a portion of the insulating layer between the first storage capacitor plate and the second storage capacitor plate.

12. The organic light emitting diode display of claim 11 , wherein the semiconductor layer of the second thin film transistor extends and is bent under the gate electrode of the second thin film transistor.

13. The organic light emitting diode display of claim 12 , further comprising a fourth thin film transistor electrically connected to the second thin film transistor and the first voltage line.

14. The organic light emitting diode display of claim 13 , wherein the semiconductor layer of the second thin film transistor extends to the fourth thin film transistor.

15. The organic light emitting diode display of claim 12 , further comprising a fourth thin film transistor electrically connected to the second thin film transistor and the organic light emitting diode.

16. The organic light emitting diode display of claim 15 , wherein the semiconductor layer of the second thin film transistor extends to the fourth thin film transistor.

17. The organic light emitting diode display of claim 12 , further comprising a fourth thin film transistor electrically connected to the second thin film transistor and the second voltage line.

18. The organic light emitting diode display of claim 17 , wherein the semiconductor layer of the second thin film transistor extends to the fourth thin film transistor.

19. The organic light emitting diode display of claim 12 , further comprising a fourth thin film transistor electrically connected to the second voltage line and the organic light emitting diode.

20. The organic light emitting diode display of claim 19 , wherein the semiconductor layer of the second thin film transistor extends to the fourth thin film transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 22, 2018
From: KIM, SE-HO; PARK, JIN-WOO; LEE, WON-SE
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 045316/0974 →
Priority Claims (1)
KR 10-2012-0084976 · Aug 2, 2012 · national
Continuity (4)
Continuation 15603309 · May 23, 2017
Continuation 15238449 · Aug 16, 2016
Continuation 13952508 · Jul 26, 2013
Related Publication 20180175134A1 · Jun 21, 2018
Cited By (3)
US 12,213,358 US 12,389,679 US 12,740,273