Organic light emitting diode display with bent semiconductor layer
An organic light emitting diode display includes a substrate, a scan line on the substrate for transferring a scan signal, a data line crossing the scan line and for transferring a data signal, a driving voltage line crossing the scan line and for transferring a driving voltage, a switching thin film transistor coupled to the scan line and the data line, a driving thin film transistor coupled to a switching drain electrode of the switching thin film transistor, and an organic light emitting diode (OLED) coupled to a driving drain electrode of the driving thin film transistor, wherein a driving semiconductor layer of the driving thin film transistor is bent and in a plane substantially parallel to the substrate.
1. An organic light emitting diode display comprising:
a substrate;
a semiconductor layer on the substrate;
an organic light emitting diode on the semiconductor layer;
a switching thin film transistor comprising a first portion of the semiconductor layer and coupled to a first scan line and a data line;
a driving thin film transistor comprising a second portion of the semiconductor layer, the semiconductor layer coupling the driving thin film transistor to the switching thin film transistor, the second portion of the semiconductor layer having a bent portion;
an operation control thin film transistor comprising a third portion of the semiconductor layer, the semiconductor layer coupling the operation control thin film transistor to the driving thin film transistor, the operation control thin film transistor being coupled to a first voltage line and a light emission control line; and
a storage capacitor comprising a first capacitor plate configured to operate as a gate electrode of the driving thin film transistor, a second capacitor plate coupled to the first voltage line and overlapping the first capacitor plate, and a portion of an insulating layer between the first capacitor plate and the second capacitor plate,
wherein the bent portion of the second portion of the semiconductor layer is under the first capacitor plate, and
wherein the driving thin film transistor and the storage capacitor are between the first scan line and the light emission control line in a plan view.
2. The organic light emitting diode display according to claim 1 , further comprising a light emission control thin film transistor comprising a fourth portion of the semiconductor layer,
wherein the semiconductor layer couples the light emission control thin film transistor to the driving thin film transistor, and
wherein the light emission control thin film transistor is coupled to the organic light emitting diode through the semiconductor layer.
3. The organic light emitting diode display according to claim 2 , further comprising a bypass thin film transistor comprising a fifth portion of the semiconductor layer,
wherein the semiconductor layer couples the bypass thin film transistor to the light emission control thin film transistor, and
wherein the bypass thin film transistor is coupled to the organic light emitting diode.
4. The organic light emitting diode display according to claim 3 , wherein a gate electrode of the bypass thin film transistor is configured to receive a signal from a second scan line crossing the data line.
5. The organic light emitting diode display according to claim 2 , wherein a gate electrode of the operation control thin film transistor and a gate electrode of the light emission control thin film transistor are coupled together and configured to receive a signal from the light emission control line.
6. The organic light emitting diode display according to claim 2 , wherein source and drain regions of the semiconductor layer are doped with N-type impurities.
7. The organic light emitting diode display according to claim 2 , wherein source and drain regions of the semiconductor layer are doped with P-type impurities.
8. The organic light emitting diode display according to claim 1 , further comprising a protective layer,
wherein the organic light emitting diode further comprises a pixel electrode on the protective layer, the pixel electrode overlaps the second portion of the semiconductor layer and the storage capacitor.
9. The organic light emitting diode display according to claim 1 , further comprising;
a compensation thin film transistor coupled to the gate electrode of the driving thin film transistor; and
a connection member coupled to the compensation thin film transistor and the storage capacitor,
wherein the connection member is coupled to the first capacitor plate through a storage opening in the second capacitor plate.
10. The organic light emitting diode display according to claim 9 , wherein the storage opening is between the first scan line and the light emission control line in the plan view.
11. The organic light emitting diode display according to claim 9 , further comprising a protective layer,
wherein the organic light emitting diode further comprises a pixel electrode on the protective layer, the pixel electrode overlaps the connection member and the storage opening.
12. The organic light emitting diode display according to claim 10 , wherein the storage opening overlaps the storage capacitor in the plan view.
13. The organic light emitting diode display according to claim 10 , wherein the connection member overlaps the first scan line in the plan view.
14. The organic light emitting diode display according to claim 1 , further comprising an interlayer insulating layer on the storage capacitor,
wherein the storage capacitor is coupled to the first voltage line through a contact hole in the interlayer insulating layer.
15. The organic light emitting diode display according to claim 14 , wherein the contact hole is between the first scan line and the light emission control line in the plan view.
16. The organic light emitting diode display according to claim 15 , wherein the second capacitor plate and the first voltage line overlap each other.
17. The organic light emitting diode display according to claim 1 , wherein the second capacitor plate extends and overlaps the data line.
18. The organic light emitting diode display according to claim 9 , further comprising an initialization thin film transistor being coupled to a third scan line and the connection member,
wherein the first scan line is between the third scan line and the storage capacitor in the plan view, and the connection member is between the third scan line and the light emission control line in the plan view.
19. The organic light emitting diode display according to claim 18 , wherein the compensation thin film transistor is between the storage capacitor and the third scan line in the plan view.
20. The organic light emitting diode display according to claim 1 , wherein the bent portion of the second portion of the semiconductor layer and the second capacitor plate overlap each other.
21. An organic light emitting diode display comprising:
a substrate;
a semiconductor layer on the substrate;
a switching thin film transistor comprising a first portion of the semiconductor layer and coupled to a first scan line and a data line;
a driving thin film transistor comprising a second portion of the semiconductor layer, the second portion and the first portion of the semiconductor layer coupling the driving thin film transistor to the switching thin film transistor, the second portion of the semiconductor layer having a bent portion;
an operation control thin film transistor comprising a third portion of the semiconductor layer, the third portion and the second portion of the semiconductor layer coupling the operation control thin film transistor to the driving thin film transistor, the operation control thin film transistor being coupled to a first voltage line and a light emission control line; and
a storage capacitor comprising a first capacitor plate configured to operate as a gate electrode of the driving thin film transistor, a second capacitor plate coupled to the first voltage line and overlapping the first capacitor plate, and a portion of an insulating layer between the first capacitor plate and the second capacitor plate,
wherein the second portion of the semiconductor layer is under the first capacitor plate and the second capacitor plate, and
wherein the driving thin film transistor and the storage capacitor are between the first scan line and the light emission control line in a plan view and overlap each other.
22. The organic light emitting diode display according to claim 21 , further comprising a protective layer and an organic light emitting diode,
wherein the organic light emitting diode further comprises a pixel electrode on the protective layer, the pixel electrode overlaps the second portion of the semiconductor layer and the storage capacitor.
23. The organic light emitting diode display according to claim 21 , further comprising:
a compensation thin film transistor coupled to the gate electrode of the driving thin film transistor; and
a connection member coupled to the compensation thin film transistor and the storage capacitor,
wherein the connection member is coupled to the first capacitor plate through a storage opening in the second capacitor plate.
24. The organic light emitting diode display according to claim 23 , wherein the storage opening is between the first scan line and the light emission control line in the plan view.
25. The organic light emitting diode display according to claim 24 , further comprising a protective layer and an organic light emitting diode,
wherein the organic light emitting diode further comprises a pixel electrode on the protective layer, the pixel electrode overlaps the connection member and the storage opening.
26. The organic light emitting diode display according to claim 21 , wherein the second portion of the semiconductor layer and the portion of the insulating layer overlap each other.
27. An organic light emitting diode display comprising:
a substrate;
a semiconductor layer on the substrate;
a switching thin film transistor comprising a first portion of the semiconductor layer and coupled to a first scan line and a data line;
a driving thin film transistor comprising a second portion of the semiconductor layer, the semiconductor layer coupling the driving thin film transistor to the switching thin film transistor, the second portion of the semiconductor layer having a bent portion;
an operation control thin film transistor comprising a third portion of the semiconductor layer, the semiconductor layer coupling the operation control thin film transistor to the driving thin film transistor, the operation control thin film transistor being coupled to a first voltage line and a light emission control line; and
a storage capacitor comprising a first capacitor plate configured to operate as a gate electrode of the driving thin film transistor, a second capacitor plate coupled to the first voltage line and overlapping the first capacitor plate, and a portion of an insulating layer between the first capacitor plate and the second capacitor plate,
wherein the bent portion of the second portion of the semiconductor layer overlaps the portion of the insulating layer and is between the first scan line and the light emission control line in a plan view.
28. The organic light emitting diode display according to claim 27 , further comprising:
a compensation thin film transistor coupled to the gate electrode of the driving thin film transistor; and
a connection member coupled to the compensation thin film transistor and the storage capacitor,
wherein the connection member is coupled to the first capacitor plate through a storage opening in the second capacitor plate.
29. The organic light emitting diode display according to claim 28 , wherein the storage opening is between the first scan line and the light emission control line in the plan view.
30. The organic light emitting diode display according to claim 28 , wherein the connection member overlaps the first scan line in the plan view.