Semiconductor device and manufacturing method thereof
A semiconductor device includes a first metal wiring layer, an interlayer insulating layer formed over the first metal layer, a second metal wiring structure embedded in the interlayer dielectric layer and connected to the first metal wiring layer, and an etch-stop layer disposed between the first metal wiring and the first interlayer dielectric layer. The etch-stop layer includes one or more sub-layers. The etch-stop layer includes a first sub-layer made of an aluminum-based insulating material, hafnium oxide, zirconium oxide or titanium oxide.
1. A semiconductor device, comprising:
a first metal wiring layer;
an interlayer dielectric layer formed over the first metal layer;
a second metal wiring structure embedded in the interlayer dielectric layer and connected to the first metal wiring layer; and
an etch-stop layer disposed between the first metal wiring and the interlayer dielectric layer, the etch-stop layer including one or more sub-layers,
wherein the etch-stop layer consisting of a first sub-layer made of aluminum oxy-nitride having a non-uniform nitrogen concentration in a thickness direction, a second sub-layer made of a silicon based insulating material and a third sub-layer made of at least one selected from the group consisting of aluminum oxy-carbide, hafnium oxide, zirconium oxide, and titanium oxide,
the second sub-layer is disposed between the first sub-layer and the third sub-layer.
2. The semiconductor device of claim 1 , wherein:
the first sub-layer is in contact with the first metal wiring,
the second sub-layer is in contact with an upper surface of the first sub-layer, and
the third sub-layer is in contact with an upper surface of the second sub-layer.
3. A method for manufacturing a semiconductor device, comprising:
forming a first metal wiring layer;
forming an etch-stop layer over the first metal wiring layer;
forming an interlayer dielectric layer on the etch-stop layer;
forming a mask layer on the interlayer dielectric layer, the mask layer being made of at least one selected from the group consisting of TiN, TaN and TiO 2 ;
forming an opening by etching the interlayer dielectric layer; and
forming a second metal layer in the opening, wherein:
the etch-stop layer includes a first sub-layer made of an aluminum based insulating material, a second sub-layer made of a silicon based insulating material and a third sub-layer made of an aluminum based insulating material,
the first sub-layer is in contact with the interlayer dielectric layer,
the second sub-layer is in contact with a bottom surface of the first sub-layer,
the third sub-layer is in contact with the first metal wiring layer and a bottom surface of the second sub-layer,
at least one of the first sub-layer and the third sub-layer is made by forming an aluminum layer and treating the aluminum layer with plasma using at least one of NH 3 gas, CO 2 gas and CO gas, thereby forming an aluminum oxide having non-uniform concentration of at least one of N, O and C,
the etching for forming the opening includes a first etching process for etching the interlayer dielectric layer and a second etching process performed after the first etching process to expose the first metal wiring layer, and
the first sub-layer functions as an etch-stop layer for first etching process.
4. A semiconductor device, comprising:
a first metal wiring layer;
an interlayer dielectric layer formed over the first metal layer;
a second metal wiring structure embedded in the interlayer dielectric layer and connected to the first metal wiring layer; and
an etch-stop layer disposed between the first metal wiring and the interlayer dielectric layer, the etch-stop layer including one or more sub-layers, wherein:
the etch-stop layer consisting of a first sub-layer, a second sub-layer formed on the first sub-layer and a third sub-layer formed on the second sub-layer,
the first sub-layer and the third sub-layer are made of at last one from the group consisting of aluminum oxy-carbide and aluminum oxy-nitride having a non-uniform nitrogen concentration in a thickness direction, aluminum oxy-carbide having a non-uniform carbon concentration in the thickness direction, hafnium oxide, zirconium oxide and titanium oxide,
the second sub-layer is made of a silicon based insulating material,
the third sub-layer is in contact with the interlayer dielectric layer,
the second sub-layer is in contact with a bottom surface of the third sub-layer, and
the first sub-layer is in contact with the first metal wiring layer and a bottom surface of the second sub-layer.
5. The semiconductor device of claim 4 , wherein:
the first sub-layer and the third-sub layer are made of different materials, and
at least one of the first sub-layer and the third sub-layer is made of aluminum oxy-nitride having a non-uniform nitrogen concentration in a thickness direction.
6. The semiconductor device of claim 4 , wherein at least one of the first sub-layer and the third sub-layer is made of at last one from the group consisting of hafnium oxide, zirconium oxide and titanium oxide.
7. The semiconductor device of claim 4 , wherein:
the first sub-layer and the third-sub layer are made of different materials, and
at least one of the first sub-layer and the third sub-layer is made of aluminum oxy-carbide having a non-uniform carbon concentration in a thickness direction.