IP Library Granted Patent US 10,229,844
Granted Patent B2
US 10,229,844 · App. 15/183,891 · Granted Mar 12, 2019

Gas supply system, gas supply control method and gas replacement method

Inventors: Atsushi Sawachi (Miyagi, JP); Norihiko Amikura (Miyagi, JP); Yoshiyasu Sato (Miyagi, JP)
Assignee: TOKYO ELECTRON LIMITED
H01L21/67069C23C16/455C23C16/45561G01F1/684G05D7/0635H01J37/32009H01J37/3244H01J37/32449H01J37/32834H01L21/67017H01L21/67253H01J2237/334H01L21/31116
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Quick Facts
Patent No.
US 10,229,844
App. No.
15/183,891
Granted
Mar 12, 2019
Kind
B2
Abstract

Throughput of the processing can be improved. A gas supply system includes a plurality of element devices which constitute the gas supply system and a base 212 on which the plurality of element devices are disposed. Some of the element devices are disposed on a surface 212 a of the base 212 , and the others are disposed on a surface 212 b of the base 212 , which is opposite to the surface 212 a of the base 212 . The plurality of element devices may be implemented by, for example, a flow rate controller FD and a secondary valve FV 2 . The secondary valve FV 2 is disposed on the surface 212 b , which is opposite to the surface 212 a of the base 212 where the flow rate controller FD is disposed.

Claims (21)

1. A gas supply system of supplying a gas into a processing apparatus, comprising:

a plurality of element devices which constitute the gas supply system; and

a base on which the plurality of element devices are disposed,

wherein some of the plurality of element devices are disposed on a first surface of the base and the others of the plurality of element devices are disposed on a second surface of the base, which is opposite to the first surface of the base,

wherein the plurality of element devices comprise:

a flow rate controller configured to control a flow rate of the gas;

an upstream valve whose upstream side is connected to a supply source of the gas and whose downstream side is connected to the flow rate controller in a direction along which the gas is flown; and

a downstream valve whose upstream side is connected to the flow rate controller and whose downstream side is connected to the processing apparatus in the direction along which the gas is flown,

wherein the flow rate controller is a pressure type flow rate control device equipped with a control valve and an orifice, and

a volume V 1 of a flow path of the gas between the control valve and the orifice and a volume V 2 of a flow path of the gas between the orifice and the downstream valve satisfy a relationship of V 1 /V 2 ≥9.

2. The gas supply system of claim 1 ,

wherein the flow rate controller is disposed on the first surface of the base, and

the upstream valve and the downstream valve are disposed on the second surface of the base.

3. The gas supply system of claim 2 , further comprising:

a first pipeline, configured to connect the upstream valve and the flow rate controller, through which the gas is flown; and

a second pipeline, configured to connect the flow rate controller and the downstream valve, through which the gas is flown,

wherein each of the first pipeline and the second pipeline has a straight line shape and penetrates the base.

4. The gas supply system of claim 1 ,

wherein the volume V 1 of the flow path of the gas between the control valve and the orifice and the volume V 2 of the flow path of the gas between the orifice and the downstream valve satisfy a relationship of V 1 /V 2 ≤200.

5. The gas supply system of claim 3 ,

wherein the upstream valve is connected to a gas exhaust device via a gas exhaust valve.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 16, 2016
From: SAWACHI, ATSUSHI; AMIKURA, NORIHIKO; SATO, YOSHIYASU
To: TOKYO ELECTRON LIMITED
Reel/Frame 038930/0318 →
Priority Claims (1)
JP 2015-123703 · Jun 19, 2015 · national
Continuity (1)
Related Publication 20160372348A1 · Dec 22, 2016
Cited By (1)
US 12,540,400