Multi-flow gas circuits, processing chambers, and related apparatus and methods for semiconductor manufacturing
Embodiments of the present disclosure relate to multi-flow gas circuits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body, one or more heat sources, and a gas circuit in fluid communication with the chamber body. The gas circuit includes a first flow controller and a first set of valves in fluid communication with the first flow controller. The first set of valves are in fluid communication with a first set of inject passages. The gas circuit includes a second flow controller and a second set of valves in fluid communication with the second flow controller. The second set of valves is in fluid communication with a second set of inject passages. The second set of inject passages and the first set of inject passages alternate with respect to each other along the plurality of flow levels.
1 . A processing chamber applicable for semiconductor manufacturing, comprising:
a chamber body comprising:
a processing volume,
a plurality of inject passages formed in the chamber body and arranged in a plurality of flow levels, and
one or more exhaust passages formed in the chamber body;
one or more heat sources configured to heat the processing volume; and
a gas circuit in fluid communication with the chamber body, the gas circuit comprising:
a first flow controller,
a first set of valves in fluid communication with the first flow controller, the first set of valves in fluid communication with a first set of inject passages,
a first supply valve and a first supply line in fluid communication with the first flow controller,
a second flow controller,
a second set of valves in fluid communication with the second flow controller, the second set of valves in fluid communication with a second set of inject passages, the second set of inject passages and the first set of inject passages alternating with respect to each other along the plurality of flow levels,
a second supply valve and a second supply line in fluid communication with the second flow controller, and
a connection valve in fluid communication between the first supply line and the second supply line at locations downstream of the first supply valve and the second supply valve.
2 . The processing chamber of claim 1 , wherein the gas circuit further comprises:
a third flow controller; and
a valve in fluid communication with a lower inject passage below the first set of inject passages and the second set of inject passages.
3 . The processing chamber of claim 2 , wherein the gas circuit further comprises:
a third supply valve and a third supply line in fluid communication with the third flow controller.
4 . The processing chamber of claim 3 , wherein the gas circuit further comprises:
a second connection valve in fluid communication between the third supply line and the first supply line at a location downstream of the first supply valve.
5 . The processing chamber of claim 4 , wherein the gas circuit further comprises:
a third connection valve in fluid communication between the third supply line and the second supply line at a location downstream of the second supply valve.
6 . The processing chamber of claim 3 , wherein the gas circuit further comprises:
a fourth supply valve and a fourth supply line in fluid communication with the second flow controller.
7 . The processing chamber of claim 1 , wherein the first flow controller and the second flow controller is each a flow ratio controller (FRC).
8 . The processing chamber of claim 1 , further comprising a cassette disposed in the processing volume, the cassette comprising a plurality of arcuate supports, and the plurality of inject passages in fluid communication with respective flow paths above the plurality of arcuate supports.
9 . A gas circuit applicable for semiconductor manufacturing, comprising:
a first flow controller;
a first set of valves in fluid communication with the first flow controller;
a first supply valve and a first supply line in fluid communication with the first flow controller;
a second flow controller;
a second set of valves in fluid communication with the second flow controller, the second set of valves and the first set of valves alternating with respect to each other;
a second supply valve and a second supply line in fluid communication with the second flow controller; and
a connection valve in fluid communication between the first supply line and the second supply line at locations downstream of the first supply valve and the second supply valve.
10 . The gas circuit of claim 9 , wherein the gas circuit further comprises:
a third flow controller; and
a valve in fluid communication with the third flow controller.
11 . The gas circuit of claim 10 , wherein the gas circuit further comprises:
a third supply valve and a third supply line in fluid communication with the third flow controller.
12 . The gas circuit of claim 11 , wherein the gas circuit further comprises:
a second connection valve in fluid communication between the third supply line and the first supply line at a location downstream of the first supply valve.
13 . The gas circuit of claim 12 , wherein the gas circuit further comprises:
a third connection valve in fluid communication between the third supply line and the second supply line at a location downstream of the second supply valve.
14 . The gas circuit of claim 11 , wherein the gas circuit further comprises:
a fourth supply valve and a fourth supply line in fluid communication with the second flow controller.
15 . A processing chamber applicable for semiconductor manufacturing, comprising:
a chamber body comprising a plurality of inject passages arranged in a plurality of flow levels; and
a gas circuit in fluid communication with the chamber body, the gas circuit comprising:
a first flow controller,
a first set of valves in fluid communication with the first flow controller, the first set of valves in fluid communication with a first set of inject passages,
a first supply valve and a first supply line in fluid communication with the first flow controller,
a second flow controller,
a second set of valves in fluid communication with the second flow controller, the second set of valves in fluid communication with a second set of inject passages, the second set of inject passages and the first set of inject passages alternating with respect to each other along a first zone of the plurality of flow levels,
a second supply valve and a second supply line in fluid communication with the second flow controller, and
a connection valve in fluid communication between the first supply line and the second supply line at locations downstream of the first supply valve and the second supply valve,
a third flow controller,
a third set of valves in fluid communication with the third flow controller, the third set of valves in fluid communication with a third set of inject passages,
a fourth flow controller,
a fourth set of valves in fluid communication with the fourth flow controller, the fourth set of valves in fluid communication with a fourth set of inject passages, the fourth set of inject passages and the third set of inject passages alternating with respect to each other along a second zone of the plurality of flow levels.
16 . The processing chamber of claim 15 , wherein the gas circuit further comprises:
a third supply valve and a third supply line in fluid communication with the third flow controller; and
a fourth supply valve and a fourth supply line in fluid communication with the fourth flow controller.
17 . The processing chamber of claim 15 , wherein the gas circuit further comprises:
a third supply valve and a third supply line in fluid communication with the third flow controller.
18 . The processing chamber of claim 17 , wherein the gas circuit further comprises:
a second connection valve in fluid communication between the third supply line and the first supply line at a location downstream of the first supply valve.
19 . The processing chamber of claim 15 , wherein the first flow controller, the second flow controller, the third flow controller, and the fourth flow controller is each a flow ratio controller (FRC).
20 . The processing chamber of claim 15 , further comprising a cassette, the cassette comprising a plurality of arcuate supports, and the plurality of inject passages in fluid communication with respective flow paths above the plurality of arcuate supports.