Semiconductor device package and a method of manufacturing the same
At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a first substrate, an electrical component disposed on the first substrate, a second substrate disposed over the electrical component, an adhesive layer, a spacer, and an encapsulation layer. The adhesive layer is disposed between the electrical component and the second substrate. The spacer directly contacts both the adhesive layer and the second substrate. The encapsulation layer is disposed between the first substrate and the second substrate.
1. A semiconductor device package, comprising:
a first substrate;
an electrical component disposed on the first substrate;
a second substrate disposed over the electrical component;
an adhesive layer disposed between the electrical component and the second substrate;
a spacer directly contacting both the adhesive layer and the second substrate; and
an encapsulation layer disposed between the first substrate and the second substrate.
2. The semiconductor device package of claim 1 , further comprising an interconnection element electrically connecting a top surface of the first substrate and a bottom surface of the second substrate.
3. The semiconductor device package of claim 2 , wherein the interconnection element includes tin and a diameter of the interconnection element is in a range from approximately 0.10 millimeters (mm) to approximately 0.16 mm.
4. The semiconductor device package of claim 2 , wherein the encapsulation layer encapsulates the electrical component, the adhesive layer, the spacer, and the interconnection element.
5. The semiconductor device package of claim 2 , wherein the interconnection element comprises a conductive post, a solder ball, or a coated metal ball.
6. The semiconductor device package of claim 1 , wherein a top surface of the electrical component is separated from a bottom surface of the second substrate by a height (H).
7. The semiconductor device package of claim 6 , wherein the encapsulation layer includes fillers, and wherein the height (H) is greater than or equal to about three times an average diameter of the fillers.
8. The semiconductor device package of claim 1 , wherein the adhesive layer and the spacer partially cover the electrical component.
9. The semiconductor device package of claim 1 , wherein the adhesive layer and the spacer cover substantially an entire top surface of the electrical component.
10. The semiconductor device package of claim 1 , wherein the adhesive layer comprises a thermosetting resin.
11. The semiconductor device package of claim 1 , wherein the spacer comprises an epoxy resin.
12. The semiconductor device package of claim 1 , wherein the spacer has a thickness in a range from approximately 5 micrometers (μm) to approximately 25 μm.
13. The semiconductor device package of claim 1 , wherein the spacer comprises a same material as the encapsulation layer.
14. The semiconductor device package of claim 1 , wherein the electrical component is a first electrical component, and the semiconductor device package further comprises a second electrical component disposed on the second substrate.
15. A semiconductor device package, comprising:
a first substrate;
an electrical component disposed on the first substrate;
a second substrate disposed over the electrical component;
an adhesive layer disposed between the electrical component and the second substrate and in direct contact with both the electrical component and the second substrate; and
an encapsulation layer disposed between the first substrate and the second substrate.
16. The semiconductor device package of claim 15 , further comprising an interconnection element electrically connecting a top surface of the first substrate and a bottom surface of the second substrate.
17. The semiconductor device package of claim 16 , wherein the adhesive layer comprises a thermosetting resin.
18. The semiconductor device package of claim 15 , wherein a top surface of the electrical component is separated from a bottom surface of the second substrate by a height (H).
19. The semiconductor device package of claim 18 , wherein the encapsulation layer includes fillers, and wherein the height (H) is greater than or equal to about three times an average diameter of the fillers.
20. The semiconductor device package of claim 15 , wherein the adhesive layer has a thickness in a range from approximately 10 μm to approximately 30 μm.