IP Library › Granted Patent US 10,248,502
Granted Patent B2
US 10,248,502 · App. 14/829,829 · Granted Apr 2, 2019

Correcting an error in a memory device

Inventors: Diyanesh B. Chinnakkonda Vidyapoornachary (Bangalore, IN); Vijay Anand Mathiyalagan (TamilNadu, IN); Gary A. Tressler (Sandy Hook, CT)
Assignee: International Business Machines Corporation
G06F11/1072G06F3/064G06F3/0619G06F3/0653G06F3/0679G06F11/1048G11C7/04G11C29/52H03M13/356G11C2029/0409G11C2029/0411
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Quick Facts
Patent No.
US 10,248,502
App. No.
14/829,829
Granted
Apr 2, 2019
Kind
B2
Abstract

In an example, a method of correcting an error in a memory device includes determining a temperature profile associated with a region of a memory device. The temperature profile is one of a plurality of temperature profiles each associated with a respective region of a plurality of regions of the memory device. The method includes determining a correction capability based on the thermal profile. The method also includes correcting an error in the memory region using the determined correction capability.

Claims (32)

1. A method of correcting an error in a memory device, the method comprising:

using a temperature sensor to determine a temperature profile associated with a region of a memory device, wherein the temperature profile is one of a plurality of temperature profiles each associated with a respective region of a plurality of regions of the memory device; and

using a controller in communication with the memory device and the temperature sensor to determine a correction capability based on the thermal profile;

generating a bias vector indicative of the correction capability and communicating the bias vector to an error-correcting code (ECC) decoder; and

using the controller to correct an error in the memory region using the determined correction capability.

2. The method of claim 1 , further comprising logically dividing the memory device into a plurality of regions based on a temperature gradient.

3. The method of claim 1 , further comprising associating a plurality of dies with the region.

4. The method of claim 1 , further comprising associating a plurality of solid state drives (SSDs) with the region.

5. The method of claim 1 , wherein selecting the correction capability includes selecting a number of bits to be used in an error correction operation.

6. The method of claim 1 , further comprising maintaining information associating the plurality of temperature profiles with the plurality of regions.

7. The method of claim 1 , further comprising positioning an adaptive ECC decoder in at least one of a flash memory controller, a three-dimensional memory stack, and an solid state drive (SSD).

8. The method of claim 1 , using a number of ECC decoders that is less than a number of the plurality of regions.

9. The method of claim 1 , further comprising determining the temperature profile in response to at least one of a determined runtime, a specified traffic-related condition, and a set number of cycles.

10. The method of claim 1 , further comprising continuously setting a plurality of set points based on a plurality of changing temperature bounds.

11. The method of claim 1 , further comprising setting the correction capability at system startup to a highest supported ECC set point for the memory device.

12. The method of claim 1 , further comprising initiating a reassessment of the bias vector in response to detecting a threshold of data errors.

13. A method of correcting an error in a memory device, the method comprising:

using a temperature sensor to determine a temperature profile associated with a region of a memory device, wherein the temperature profile is one of a plurality of temperature profiles each associated with a respective region of a plurality of regions of the memory device; and

using a controller in communication with the memory device and the temperature sensor to determine a correction capability based on the thermal profile;

setting the correction capability at system startup to a highest supported error-correcting code (ECC) set point for the memory device; and

using the controller to correct an error in the memory region using the determined correction capability.

14. The method of claim 13 , further comprising continuously setting a plurality of set points based on a plurality of changing temperature bounds.

15. The method of claim 13 , further comprising generating a bias vector indicative of the correction capability and communicating the bias vector to an ECC decoder.

16. The method of claim 13 , further comprising initiating a reassessment of a bias vector in response to detecting a threshold of data errors.

17. A method of correcting an error in a memory device, the method comprising:

using a temperature sensor to determine a temperature profile associated with a region of a memory device, wherein the temperature profile is one of a plurality of temperature profiles each associated with a respective region of a plurality of regions of the memory device; and

using a controller in communication with the memory device and the temperature sensor to determine a correction capability based on the thermal profile;

using the controller to correct an error in the memory region using the determined correction capability; and

initiating a reassessment of a bias vector in response to detecting a threshold of data errors.

18. The method of claim 17 , further comprising continuously setting a plurality of set points based on a plurality of changing temperature bounds.

19. The method of claim 17 , further comprising generating a bias vector indicative of the correction capability and communicating the bias vector to an error-correcting code (ECC) decoder.

20. The method of claim 17 , further comprising initiating a reassessment of a bias vector in response to detecting a threshold of data errors.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 19, 2015
From: CHINNAKKONDA VIDYAPOORNACHARY, DIYANESH B.; MATHIYALAGAN, VIJAY ANAND; TRESSLER, GARY A.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 036359/0429 →
Continuity (2)
Continuation 14789055 · Jul 1, 2015
Related Publication 20170004040A1 · Jan 5, 2017