Method for processing substrate including forming a film on a silicon-containing surface of the substrate to prevent resist from extruding from the substrate during an imprinting process
A method for processing a substrate exposes a silicon-containing surface at a circumferential edge portion of a first main surface of a substrate to be processed, performs surface processing to the silicon-containing surface to increase a contact angle of the silicon-containing surface with respect to a resist material, comparing with the contact angle before the surface processing is performed, supplies the resist material onto the substrate to be processed after the surface processing, and transfers a template pattern to the resist material.
1. A method for processing a substrate, comprising:
exposing a silicon-containing surface at a circumferential edge portion of a first main surface of a substrate to be processed;
performing surface processing to the silicon-containing surface to increase a contact angle of the silicon-containing surface with respect to a resist material, comparing with the contact angle before the surface processing is performed;
supplying the resist material in sequence onto a different portion of one surface on the substrate to be processed after the surface processing;
transferring a template pattern to the resist material; and
repeating the supplying of the resist material and the transferring of the template pattern while changing a location of supplying the resist material onto the one surface on the substrate and arranging the template pattern,
wherein
the surface processing comprises forming a film on the silicon-containing surface, the film being formed by bonding silicon, carbon and fluorine, or being formed by bonding silicon, oxygen, carbon and fluorine; and
the forming of the film forms the film containing SiOCFn or SiCFn, where n is an integer that is one or more, at the circumferential edge portion that has not been covered with a shielding member, using CF based gas or a CF based solvent in a state where the shielding member is arranged on the first main surface of the substrate to be processed, the shielding member being configured to shield an inner circumferential side of the circumferential edge portion of the first main surface of the substrate to be processed.
2. The method for processing a substrate according to claim 1 ,
wherein the forming of the film performs plasma excitation or thermal excitation to the CF based gas including carbon and fluorine, or performs vaporization to the CF based solvent including carbon and fluorine to cause a chemical reaction with silicon and to form the film containing SiOCFn or SiCFn, where n is an integer that is one or more.
3. The method for processing a substrate according to claim 1 , further comprising:
forming a predetermined film on the first main surface of the substrate to be processed,
wherein the exposing of the silicon-containing surface at the circumferential edge portion of the first main surface of the substrate to be processed, comprises removing the predetermined film on the substrate to be processed.
4. The method for processing a substrate according to claim 3 ,
the exposing of the silicon-containing surface exposes silicon by coating a predetermined chemical solution on a second main surface on an opposite side of the first main surface, causing the chemical solution to go around from an edge of the circumferential edge portion of the substrate to be processed to the circumferential edge portion on the first main surface, and removing the predetermined film at the circumferential edge portion of the first main surface of the substrate to be processed by the chemical solution, and
the forming of the film decreases film thickness of the predetermined film on the first main surface and forms the film including SiOCFn or SiCFn, where n is an integer that is one or more, by bonding the silicon, the carbon, and the fluorine together at the circumferential edge portion of the first main surface, using the CF based gas or the CF based solvent.
5. The method for processing a substrate according to claim 3 , wherein the predetermined film is an insulating film.
6. The method for processing a substrate according to claim 1 ,
the method further comprising performing dehydrating-high-temperature-heat processing to the substrate to be processed between the exposing of the silicon-containing surface at the circumferential edge portion of the first main surface of the substrate to be processed and the forming of the film.
7. The method for processing a substrate according to claim 1 ,
the forming of the film comprising forming the film on a part of the circumferential edge portion or the entire circumferential edge portion of the substrate to be processed while rotating the substrate to be processed.
8. A method for processing a substrate, comprising:
exposing a silicon-containing surface at a circumferential edge portion of a first main surface of a substrate to be processed;
performing surface processing to the silicon-containing surface to increase a contact angle of the silicon-containing surface with respect to a resist material, comparing with the contact angle before the surface processing is performed;
supplying the resist material onto the substrate to be processed after the surface processing; and
transferring a template pattern to the resist material,
wherein
the surface processing comprises forming a film on the silicon-containing surface; and
the forming of the film forms the film containing SiOCFn or SiCFn, where n is an integer that is one or more, at the circumferential edge portion that has not been covered with a shielding member, using CF based gas or a CF based solvent in a state where the shielding member is arranged on the first main surface of the substrate to be processed, the shielding member being configured to shield an inner circumferential side of the circumferential edge portion of the first main surface of the substrate to be processed.
9. The method for processing a substrate according to claim 8 , further comprising:
forming a predetermined film on the first main surface of the substrate to be processed,
wherein the exposing of the silicon-containing surface at the circumferential edge portion of the first main surface of the substrate to be processed, comprises removing the predetermined film on the substrate to be processed.
10. The method for processing a substrate according to claim 9 ,
wherein the surface processing comprises forming the film on the silicon-containing surface, the film being formed by bonding silicon, carbon and fluorine, or being formed by bonding silicon, oxygen, carbon and fluorine,
the exposing of the silicon-containing surface exposes silicon by coating a predetermined chemical solution on a second main surface on an opposite side of the first main surface, causing the chemical solution to go around from an edge of the circumferential edge portion of the substrate to be processed to the circumferential edge portion on the first main surface, and removing the predetermined film at the circumferential edge portion of the first main surface of the substrate to be processed by the chemical solution, and
the forming of the film decreases film thickness of the predetermined film on the first main surface and forms the film including SiOCFn or SiCFn, where n is an integer that is one or more, by bonding the silicon, the carbon, and the fluorine together at the circumferential edge portion of the first main surface, using CF based gas or a CF based solvent.
11. A method for processing a substrate, comprising:
exposing a silicon-containing surface at a circumferential edge portion of a first main surface of a substrate to be processed;
performing surface processing to the silicon-containing surface to increase a contact angle of the silicon-containing surface with respect to a resist material, comparing with the contact angle before the surface processing is performed;
supplying the resist material onto the substrate to be processed after the surface processing;
transferring a template pattern to the resist material; and
forming a predetermined film on the first main surface of the substrate to be processed,
wherein
the exposing of the silicon-containing surface at the circumferential edge portion of the first main surface of the substrate to be processed, comprises removing the predetermined film on the substrate to be processed,
the surface processing comprises forming a film on the silicon-containing surface, the film being formed by bonding silicon, carbon and fluorine, or being formed by bonding silicon, oxygen, carbon and fluorine,
the exposing of the silicon-containing surface exposes silicon by coating a predetermined chemical solution on a second main surface on an opposite side of the first main surface, causing the chemical solution to go around from an edge of the circumferential edge portion of the substrate to be processed to the circumferential edge portion on the first main surface, and removing the predetermined film at the circumferential edge portion of the first main surface of the substrate to be processed by the chemical solution, and
the forming of the predetermined film decreases film thickness of the predetermined film on the first main surface and forms the film including SiOCFn or SiCFn, where n is an integer that is one or more, by bonding the silicon, the carbon, and the fluorine together at the circumferential edge portion of the first main surface, using CF based gas or a CF based solvent.