Imaging device comprising a circuit having dual regions each with a transistor electrically connected to a photoelectric conversion element
An imaging device which offers an image with high quality and is suitable for high-speed operation is provided. The imaging device includes a first region to an n-th region (n is a natural number of 2 or more and 16 or less) each including a first circuit, a second circuit, a third circuit, and a fourth circuit. The first to third circuits each include a transistor in which silicon is used in an active layer or an active region. The fourth circuit includes a photoelectric conversion element and a transistor in which an oxide semiconductor is used in an active layer. The first circuit includes a region overlapping with the fourth circuit. The third circuit includes a region overlapping with the fourth circuit.
1. An imaging device comprising:
a circuit comprising a first region and a second region;
a first transistor over the first region;
a first photoelectric conversion element over the first transistor, the first photoelectric conversion element comprising a first photoelectric conversion layer;
a second transistor over the second region; and
a second photoelectric conversion element over the second transistor, the second photoelectric conversion element comprising the first photoelectric conversion layer,
wherein each of the first transistor and the second transistor comprises an oxide semiconductor in a channel formation region,
wherein the first transistor is electrically connected to the first photoelectric conversion element, and
wherein the second transistor is electrically connected to the second photoelectric conversion element.
2. The imaging device according to claim 1 ,
wherein the first photoelectric conversion element further comprises a first electrode and a light-transmitting conductive layer, and
wherein the second photoelectric conversion element further comprises a second electrode and the light-transmitting conductive layer.
3. The imaging device according to claim 2 , further comprising an insulating layer between the first electrode and the second electrode.
4. The imaging device according to claim 1 , wherein the first photoelectric conversion layer comprises selenium.
5. The imaging device according to claim 1 , wherein the oxide semiconductor comprises In, Zn, and M (M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf).
6. The imaging device according to claim 1 , further comprising a first color filter over the first photoelectric conversion element.
7. The imaging device according to claim 1 , further comprising a second photoelectric conversion layer over the first photoelectric conversion element.
8. The imaging device according to claim 1 , further comprising a scintillator over the first photoelectric conversion element.
9. An electronic device comprising:
the imaging device according to claim 1 ; and
a display device.
10. An imaging device comprising:
a circuit comprising a first region and a second region;
a first transistor over the first region;
a first photoelectric conversion element over the first transistor, the first photoelectric conversion element comprising a first photoelectric conversion layer;
a second transistor over the second region; and
a second photoelectric conversion element over the second transistor, the second photoelectric conversion element comprising the first photoelectric conversion layer,
wherein each of the first transistor and the second transistor comprises an oxide semiconductor in a channel formation region,
wherein the circuit comprises a third transistor comprising silicon in a channel formation region,
wherein the first transistor is electrically connected to the third transistor,
wherein the first transistor is electrically connected to the first photoelectric conversion element, and
wherein the second transistor is electrically connected to the second photoelectric conversion element.
11. The imaging device according to claim 10 ,
wherein the first photoelectric conversion element further comprises a first electrode and a light-transmitting conductive layer, and
wherein the second photoelectric conversion element further comprises a second electrode and the light-transmitting conductive layer.
12. The imaging device according to claim 11 , further comprising an insulating layer between the first electrode and the second electrode.
13. The imaging device according to claim 10 , wherein the first photoelectric conversion layer comprises selenium.
14. The imaging device according to claim 10 , wherein the oxide semiconductor comprises In, Zn, and M (M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf).
15. The imaging device according to claim 10 , further comprising a first color filter over the first photoelectric conversion element.
16. The imaging device according to claim 10 , further comprising a second photoelectric conversion layer over the first photoelectric conversion element.
17. The imaging device according to claim 10 , further comprising a scintillator over the first photoelectric conversion element.
18. An electronic device comprising:
the imaging device according to claim 10 ; and
a display device.