IP Library › Granted Patent US 10,253,426
Granted Patent B2
US 10,253,426 · App. 15/445,134 · Granted Apr 9, 2019

Method for manufacturing diamond substrate

Inventors: Hitoshi Noguchi (Takasaki, JP); Shozo Shirai (Takasaki, JP); Toshiharu Makino (Tsukuba, JP); Masahiko Ogura (Tsukuba, JP); Hiromitsu Kato (Tsukuba, JP); Hiroyuki Kawashima (Tsukuba, JP); Daisuke Kuwabara (Tsukuba, JP); Satoshi Yamasaki (Tsukuba, JP); Daisuke Takeuchi (Tsukuba, JP); Norio Tokuda (Kanazawa, JP); Takao Inokuma (Kanazawa, JP); Tsubasa Matsumoto (Kanazawa, JP)
Assignees: SHIN-ETSU CHEMICAL CO., LTD.; NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY; NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY
C30B25/04C30B25/186C30B25/20C30B29/04H01L21/0262H01L21/02376H01L21/02527H01L29/1602H01L21/02057H01L21/02085H01L21/3065H01L21/3086
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Quick Facts
Patent No.
US 10,253,426
App. No.
15/445,134
Granted
Apr 9, 2019
Kind
B2
Abstract

A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

Claims (20)

1. A method for manufacturing a diamond substrate, comprising:

a first step of preparing patterned diamond by growing diamond on a surface of a foundation, the surface being composed of a different kind of material other than diamond, and processing the grown diamond to have a patterned shape,

wherein a bottom portion of a pattern gap of the patterned diamond is composed of a different kind of material other than diamond or at least a part of the bottom portion of the pattern gap is pierced through,

a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in the pattern gap of the patterned diamond prepared in the first step,

a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and

a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step.

2. The method for manufacturing a diamond substrate according to claim 1 , further comprising:

removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, prior to the second step.

3. The method for manufacturing a diamond substrate according to claim 1 , wherein the patterned diamond is prepared in the first step with a ratio D/W of a depth D to a width W of the pattern gap being 0.1 or more.

4. The method for manufacturing a diamond substrate according to claim 1 , wherein the patterned diamond is prepared in the first step with at least a part of a bottom portion of the pattern gap being prepared below the surface of the foundation.

5. The method for manufacturing a diamond substrate according to claim 1 , wherein the diamond is grown by using a chemical vapor deposition method in the second step.

6. The method for manufacturing a diamond substrate according to claim 1 , wherein a void is formed in the diamond grown in the second step.

7. The method for manufacturing a diamond substrate according to claim 1 , further comprising:

removing a foreign substance adhered on a wall of the patterned diamond formed in the third step, prior to the fourth step.

8. The method for manufacturing a diamond substrate according to claim 1 , wherein the patterned diamond is formed in the third step with a ratio D/W of a depth D to a width W of the pattern gap being 0.1 or more.

9. The method for manufacturing a diamond substrate according to claim 1 , wherein the patterned diamond is formed in the third step with at least a part of a bottom portion of the pattern gap being pierced through.

10. The method for manufacturing a diamond substrate according to claim 1 , wherein the patterned diamond is formed in the third step with at least a part of a bottom portion of the pattern gap being prepared below the surface of the foundation.

11. The method for manufacturing a diamond substrate according to claim 1 , wherein the diamond formed in the second step is removed in the third step to a position being 5 μm or more and 30 μm or less away from a boundary with the patterned diamond prepared in the first step.

12. The method for manufacturing a diamond substrate according to claim 1 , wherein the diamond is grown by using a chemical vapor deposition method in the fourth step.

13. The method for manufacturing a diamond substrate according to claim 1 , wherein a void is formed in the diamond grown in the fourth step.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 28, 2017
From: NOGUCHI, HITOSHI; SHIRAI, SHOZO; MAKINO, TOSHIHARU; OGURA, MASAHIKO; KATO, HIROMITSU; KAWASHIMA, HIROYUKI; KUWABARA, DAISUKE; YAMASAKI, SATOSHI; TAKEUCHI, DAISUKE; TOKUDA, NORIO; INOKUMA, TAKAO; MATSUMOTO, TSUBASA
To: SHIN-ETSU CHEMICAL CO., LTD.; NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY; NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY
Reel/Frame 041401/0418 →
Priority Claims (1)
JP 2016-037175 · Feb 29, 2016 · national
Continuity (1)
Related Publication 20170247811A1 · Aug 31, 2017
Cited By (1)
US 12,209,306