Qubit die attachment using preforms
Embodiments of the present disclosure describe novel qubit device packages, as well as related computing devices and methods. In one embodiment, an exemplary qubit device package includes a qubit die and a package substrate, where the qubit die is coupled to the package substrate using one or more preforms. In particular, a single preform may advantageously be used to replace a plurality of individual contacts, e.g. a plurality of individual solder bumps, electrically coupling the qubit die to the package substrate. Such packages may reduce design complexity and undesired coupling, and enable inclusion of larger numbers of qubits in a single qubit die.
1. A qubit device package, comprising:
a qubit die having a first face and an opposing second face, where the qubit die includes one or more qubit devices, and where the first face of the qubit die includes a plurality of conductive contacts;
a package substrate having a first face and an opposing second face, where the second face of the package substrate includes a plurality of conductive contacts; and
an interconnect structure, coupling two or more of the plurality of conductive contacts at the first face of the qubit die with associated two or more conductive contacts at the second face of the package substrate.
2. The qubit device package according to claim 1 , wherein the interconnect structure is a solder preform.
3. The qubit device package according to claim 1 , wherein the interconnect structure is an indium preform.
4. The qubit device package according to claim 1 , wherein the interconnect structure includes an electrically conductive material that is continuous between two or more of the plurality of conductive contacts at the first face of the qubit die and the associated two or more conductive contacts at the second face of the package substrate.
5. The qubit device package according to claim 1 , wherein the interconnect structure is a preform comprising an electrically conductive core material coated with a solder material.
6. The qubit device package according to claim 5 , wherein the electrically conductive core material includes copper or indium.
7. The qubit device package according to claim 5 , wherein the solder material has a melting point that is less than 180 degrees Celsius.
8. The qubit device package according to claim 1 , wherein the interconnect structure is a preform comprising an electrically non-conductive core material coated with a solder material.
9. The qubit device package according to claim 8 , wherein the solder material includes indium.
10. The qubit device package according to claim 8 , wherein the solder material has a melting point that is less than 180 degrees Celsius.
11. The qubit device package according to claim 1 , wherein an individual conductive contact of the plurality of conductive contacts at the first face of the qubit die or at the second face of the package substrate includes a metal defined pad.
12. The qubit device package according to claim 1 , wherein an individual conductive contact of the plurality of conductive contacts at the first face of the qubit die or at the second face of the package substrate includes a solder mask defined pad.
13. The qubit device package according to claim 1 , wherein the two or more of the plurality of conductive contacts are ground contacts.
14. The qubit device package according to claim 1 , wherein the package substrate is an interposer.
15. The qubit device package according to claim 1 , wherein the one or more qubit devices include one or more superconducting qubit devices.
16. The qubit device package according to claim 15 , wherein the one or more superconducting qubit devices include at least one resonator at the first face of the qubit die.
17. A qubit device package, comprising:
a qubit die having a first face and an opposing second face, where the qubit die includes one or more qubit devices, and where the first face of the qubit die includes a conductive contact;
a package substrate having a first face and an opposing second face, where the second face of the package substrate includes a conductive contact; and
an interconnect structure, coupling the conductive contact at the first face of the qubit die with the conductive contact at the second face of the package substrate,
where the conductive contact at the first face of the qubit die is shaped as a line provided in a plane of the first face of the qubit die, the line including at least one curved portion.
18. The qubit device package according to claim 17 , where a shape of the conductive contact at the second face of the package substrate is conformal to a shape of the conductive contact at the first face of the qubit die.
19. The qubit device package according to claim 17 , where the conductive contact at the second face of the package substrate is shaped as a line provided in a plane of the second face of the package substrate, the line including at least one curved portion.
20. The device package according to claim 17 , wherein:
the conductive contact at the first face of the qubit die is a ground conductive contact,
the first face of the qubit die further includes a signal conductive contact, and
the at least one curved portion of the ground conductive contact at the first face of the qubit die includes a portion at least partially enclosing the signal conductive contact.