Semiconductor device and power receiving device
An object is to provide a semiconductor device that is capable of wireless communication, such as an RFID tag, which can transmit and receive individual information without checking remaining capacity of a battery or changing batteries due to deterioration with time in the battery for a drive power supply voltage, and maintain a favorable a transmission/reception state even when electric power of an electromagnetic wave from a reader/writer is not sufficient. The semiconductor device includes a signal processing circuit, a first antenna circuit connected to the signal processing circuit, an antenna circuit group, a rectifier circuit-group and a battery connected to the signal processing circuit. The first antenna circuit transmits and receives a signal for transmitting data stored in the signal processing circuit and drives a power supply circuit, and each antenna circuit of the antenna circuit group receives a signal for charging the battery and includes an antenna which has a different corresponding frequency.
1. A method for manufacturing a semiconductor device comprising:
forming a peeling layer over a first substrate;
forming a first transistor and a second transistor over the peeling layer;
forming an insulating layer over the first transistor and the second transistor;
forming a first antenna and a second antenna over the insulating layer;
forming an opening in the insulating layer;
attaching a first sheet material over the insulating layer after forming the opening;
separating the transistor from the first substrate at the peeling layer;
attaching a second sheet material under the first transistor and the second transistor;
removing the first sheet material; and
electrically connecting a first connection terminal provided over a second substrate to the first transistor and a second connection terminal provided over a third substrate to the second transistor,
wherein the second substrate and the third substrate are spaced apart from each other,
wherein the first transistor is interposed between the second sheet material and the second substrate, and the second transistor is interposed between the second sheet material and the third substrate, and
wherein the second substrate does not overlap the first antenna or the second antenna, and the third substrate does not overlap the first antenna or the second antenna.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the peeling layer is a metal film.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein the first connection terminal or the second connection, terminal is a connection terminal of a battery.
4. A method for manufacturing a semiconductor device comprising:
forming a peeling layer over a first substrate;
forming a first transistor and a second transistor over the peeling layer;
forming an insulating layer over the first transistor and the second transistor;
forming a first antenna and a second antenna over the insulating layer;
forming an opening in the insulating layer by laser irradiation;
attaching a first sheet material over the insulating layer after forming the opening;
separating the transistor from the first substrate at the peeling layer;
attaching a second sheet material under the first transistor and the second transistor;
removing the first sheet material; and
electrically connecting a first connection terminal provided over a second substrate to the first transistor and a second connection terminal provided over a third substrate to the second transistor,
wherein the second substrate and the third substrate are spaced apart from each other,
wherein the first transistor is interposed between the second sheet material and the second substrate, and the second transistor is interposed between the second sheet material and the third substrate, and
wherein the second substrate does not overlap the first antenna or the second antenna, and the third substrate does not overlap the first antenna or the second antenna.
5. The method for manufacturing a semiconductor device according to claim 4 , wherein the peeling layer is a metal film.
6. The method for manufacturing a semiconductor device according to claim 4 , wherein the first connection terminal or the second connection terminal is a connection terminal of a battery.