Method of forming an integrated circuit (IC) with hallow trench isolation (STI) regions and the resulting IC structure
Disclosed is an integrated circuit (IC) formation method, wherein trenches are formed within a semiconductor layer to define semiconductor mesa(s). Instead of immediately filling the trenches with an isolation material and performing a planarizing process to complete the STI regions prior to device formation, the method initially only form sidewall spacers within the trenches on the exposed sidewalls of the semiconductor mesa(s). After the sidewall spacers are formed, device(s) (e.g., field effect transistor(s), silicon resistor(s), etc.) are formed using the semiconductor mesa(s) and, optionally, additional device(s) (e.g., polysilicon resistor(s)) can be formed within the trenches between adjacent semiconductor mesas. Subsequently, middle of the line (MOL) dielectrics (e.g., a conformal etch stop layer and a blanket interlayer dielectric (ILD) layer) are deposited over the device(s), thereby filling any remaining space within the trenches and completing the STI regions. Also disclosed is an IC structure formed using the method.
1. A method comprising:
providing a semiconductor-on-insulator wafer comprising a substrate, a semiconductor layer on the substrate and an insulator layer on the semiconductor layer;
forming trenches in the semiconductor layer to define multiple semiconductor mesas on the insulator layer, wherein the semiconductor mesas having first sidewalls and top surfaces;
forming, within the trenches, first sidewall spacers positioned laterally adjacent to the first sidewalls of the semiconductor mesas, wherein the forming of the first sidewall spacers comprises:
depositing a conformal layer of sidewall spacer material in the trenches and over the semiconductor mesas; and
performing a selective anisotropic etch process to remove the sidewall spacer material from above the top surfaces of the semiconductor mesas;
after the forming of the first sidewall spacers, forming devices using the semiconductor mesas and, during the forming of the devices, forming an additional device within a trench positioned laterally between adjacent semiconductor mesas, wherein the forming of the devices comprises forming a field effect transistor using a first semiconductor mesa and wherein the forming of the field effect transistor comprises forming a gate on a top surface of the first semiconductor mesa after the forming of the first sidewall spacers; and,
depositing a blanket interlayer dielectric layer, wherein the first sidewall spacers and the interlayer dielectric layer comprise different dielectric materials,
wherein the forming of the devices further comprises forming a first resistor using a second semiconductor mesa,
wherein the forming of the additional device comprises forming a second resistor,
wherein the forming of the devices and the forming of the additional device comprise:
depositing a silicon oxide layer;
depositing a polysilicon layer on the silicon oxide layer to form a multi-layer stack; and
patterning the multi-layer stack to form polysilicon-silicon oxide shapes, the polysilicon-silicon oxide shapes including:
the gate for the field effect transistor on the top surface of the first semiconductor mesa; and
the second resistor, and
wherein the method further comprises:
essentially simultaneously forming second sidewall spacers and third sidewall spacers such that the second sidewall spacers are positioned laterally adjacent to second sidewalls of the polysilicon-silicon oxide shapes and such that the third sidewall spacers are within the trenches positioned laterally adjacent to the first sidewall spacers, wherein the second sidewall spacers and the third sidewall spacers comprise a different dielectric material than the first sidewall spacers;
forming a protective layer over the first resistor and the second resistor;
performing a dopant implantation process to form source/drain regions for the field effect transistor in the first semiconductor mesa; and,
forming silicide layers on the source/drain regions.
2. The method of claim 1 , wherein the first sidewall spacers comprise silicon nitride.
3. The method of claim 1 , wherein the depositing of the blanket interlayer dielectric layer further comprises depositing the blanket interlayer dielectric layer within at least some of the trenches and above the additional device and the devices.
4. The method of claim 1 , further comprising, before the depositing of the blanket interlayer dielectric layer, depositing a conformal etch stop layer, wherein the conformal etch stop layer comprises a different dielectric material than the blanket interlayer dielectric layer.
5. The method of claim 1 , wherein the gate has a first portion above the top surface of the first semiconductor mesa and a second portion within an adjacent trench.
6. A method comprising:
forming trenches in a semiconductor layer to define at least one semiconductor mesa, the semiconductor mesa having first sidewalls;
forming first sidewall spacers within the trenches and positioned laterally adjacent to the first sidewalls of the semiconductor mesa;
after the forming of the first sidewall spacers and before completely filling the trenches, forming a device using the semiconductor mesa, wherein the forming of the device comprises forming a gate on a top surface of the semiconductor mesa and wherein the gate has a first portion above the top surface of the semiconductor mesa and a second portion within an adjacent trench; and,
depositing a blanket interlayer dielectric layer, wherein the first sidewall spacers and the blanket interlayer dielectric layer comprise different dielectric materials,
wherein the method further comprises, after the forming of the device and before the depositing of the blanket interlayer dielectric layer, essentially simultaneously forming second sidewall spacers and third sidewall spacers such that the second sidewall spacers are positioned laterally adjacent to second sidewalls of the gate and such that the third sidewall spacers are within the trenches positioned laterally adjacent to the first sidewall spacers, and
wherein the second sidewall spacers and the third sidewall spacers comprise a different dielectric material than the first sidewall spacers.
7. The method of claim 6 , wherein the first sidewall spacers comprise silicon nitride.
8. The method of claim 6 , wherein the depositing of the blanket interlayer dielectric layer further comprises depositing the blanket interlayer dielectric layer within the trenches and above the device.
9. The method of claim 6 , further comprising, before the depositing of the blanket interlayer dielectric layer, forming a conformal etch stop layer over the device and within the trenches, wherein the conformal etch stop layer comprises a different dielectric material than the blanket interlayer dielectric layer.