Chemical mechanical polishing system
A chemical mechanical polishing system includes a platen, a slurry introduction device and at least one polishing head. The platen is configured to allow a polishing pad to be disposed thereon. The slurry introduction device is configured to supply slurry onto the polishing pad. The polishing head includes a main body and at least one grinding piece. The main body has an accommodation space for accommodating a wafer. The grinding piece is disposed on the main body. The grinding piece has a grinding surface configured to grind against the polishing pad.
1. A chemical mechanical polishing system comprising:
a platen;
a polishing pad disposed on the platen;
a slurry introducing device configured to supply slurry onto the polishing pad; and
a polishing head comprising:
a main body having an accommodation space for accommodating a wafer;
a retainer ring configured to retain the wafer; and
at least one grinding piece disposed on the retainer ring, the at least one grinding piece having at least a pair of grinding surfaces configured to grind against the polishing pad and separated by a portion of the retainer ring that is void of a grinding surface, wherein the portion of the retainer ring that is void of the grinding surface abuts at least one of the grinding surfaces and has a side and the side substantially follows a line that passes through a center point of the retainer ring.
2. The chemical mechanical polishing system of claim 1 , wherein the grinding surfaces are harder than the polishing pad.
3. The chemical mechanical polishing system of claim 1 , wherein the grinding piece comprises a plurality of grinding particles disposed on the grinding surfaces.
4. The chemical mechanical polishing system of claim 3 , wherein the grinding particles are made of diamond.
5. The chemical mechanical polishing system of claim 1 , wherein the main body comprises:
a chamber fluidly connected to a gas source; and
a membrane sealing the chamber, the membrane being configured to abut against the wafer.
6. The chemical mechanical polishing system of claim 1 , wherein the retainer ring is disposed between the main body and the grinding piece.
7. The chemical mechanical polishing system of claim 1 , wherein the accommodation space is surrounded by a plurality of the grinding pieces.
8. The chemical mechanical polishing system of claim 1 , wherein the grinding piece has a ring shape, and the accommodation space is surrounded by the grinding piece.
9. The chemical mechanical polishing system of claim 1 , further comprising a second polishing head.
10. A chemical mechanical polishing system comprising:
a platen;
a polishing pad disposed on the platen;
a slurry introducing device configured to supply slurry onto the polishing pad; and
at least one polishing head comprising:
a main body having an accommodation space for accommodating a wafer;
a retainer ring configured to retain the wafer, and
a plurality of grinding surfaces disposed on the retainer ring and configured to grind against the polishing pad, wherein the plurality of grinding surfaces are separated by a plurality of portions of the retainer ring that are void of a grinding surface, wherein at least one of the portions of the retainer ring that is void of the grinding surface abuts at least one of the grinding surfaces and has a side and the side substantially follows a line that passes through a center point of the retainer ring.
11. The chemical mechanical polishing system of claim 10 , wherein the polishing head further comprises a plurality of grinding particles disposed on the grinding surfaces, the grinding particles are made of a material harder than the polishing pad.
12. The chemical mechanical polishing system of claim 11 , wherein the grinding particles are made of diamond.
13. The chemical mechanical polishing system of claim 11 , wherein the grinding particles are separated into a plurality of groups.
14. The chemical mechanical polishing system of claim 13 , wherein the accommodation space is surrounded by the groups of grinding particles.
15. The chemical mechanical polishing system of claim 10 , further comprising a second polishing head.
16. A chemical mechanical polishing system comprising:
a platen;
a polishing pad disposed on the platen;
a slurry introducing device over the polishing pad; and
at least one polishing head comprising a retainer ring configured to retain a wafer and at least one grinding piece disposed on the retainer ring, the grinding piece having a plurality of grinding surfaces configured to grind against the polishing pad and separated by a plurality of portions of the retainer ring that are void of a grinding surface, wherein at least one of the portions of the retainer ring that is void of the grinding surface abuts at least one of the grinding surfaces and has a side and the side substantially follows a line that passes through a center point of the retainer ring.
17. The chemical mechanical polishing system of claim 16 , wherein the grinding piece is harder than the polishing pad.
18. The chemical mechanical polishing system of claim 16 , wherein a quantity of the grinding piece is plural, and wherein the grinding pieces are circumferentially arranged.
19. The chemical mechanical polishing system of claim 16 , wherein the grinding piece comprises a plurality of diamond particles in contact with the polishing pad.
20. The chemical mechanical polishing system of claim 16 , further comprising a second polishing head.