Manufacturing method of package structure having embedded bonding film
A manufacturing method of a package structure having an embedded bonding film comprises the following steps: forming a bonding film, forming a redistribution substrate and forming a core on a bottom side of the redistribution substrate opposite to the top side. The bonding film comprises the following steps: forming a plurality of dielectric layers and metal circuit layers sequentially and alternatively in a plurality of bonding areas; exposing a plurality of top metal pads of a topmost metal circuit layer among the metal circuit layers in the plurality of bonding areas; and etching to form a bonding film. The bonding film has a left longitudinal branch and a lower latitudinal branch. A lower end of the left longitudinal branch is connected to a left end of the lower latitudinal branch. The left longitudinal branch and the lower latitudinal branch form an L shape.
1. A manufacturing method of a package structure having an embedded bonding film, comprising:
forming a bonding film, comprising:
forming a plurality of dielectric layers and metal circuit layers sequentially and alternatively in a plurality of bonding areas;
exposing a plurality of top metal pads of a topmost metal circuit layer among the metal circuit layers in the plurality of bonding areas; and
etching the plurality of dielectric layers to form a bonding film, wherein the bonding film has a left longitudinal branch and a lower latitudinal branch, wherein a lower end of the left longitudinal branch is connected to a left end of the lower latitudinal branch, the plurality of bonding areas includes at least a first bonding area and a second bonding area on the left longitudinal branch and the lower latitudinal branch, respectively, and the left longitudinal branch and the lower latitudinal branch form an L shape;
forming a redistribution substrate, wherein the bonding film is embedded at a top side of the redistribution substrate; and
forming a core on a bottom side of the redistribution substrate opposite to the top side, wherein a Young's modulus of the core is greater than a Young's modulus of the redistribution substrate.
2. The manufacturing method according to claim 1 , wherein forming the core comprises:
forming a core dielectric layer, a through conductive via and a core conductive pattern, wherein the core dielectric layer is formed at the bottom side of the redistribution substrate, the through conductive via is embedded in the core dielectric layer and electrically coupled to the redistribution substrate, and the core conductive pattern is formed on the core dielectric layer opposite to the redistribution substrate and electrically coupled to the through conductive via.
3. The manufacturing method according to claim 2 , further comprising:
forming a plurality of conductive terminals on the core opposite to the redistribution substrate, wherein the conductive terminals are electrically coupled to the core conductive pattern.
4. The manufacturing method according to claim 2 , further comprising:
forming an outer redistribution layer on the core opposite to the redistribution substrate, wherein the outer redistribution layer is electrically coupled to the core, wherein the Young's modulus of the core is greater than a Young's modulus of the outer redistribution layer.
5. The manufacturing method according to claim 4 , further comprising:
forming a plurality of conductive terminals on the outer redistribution layer opposite to the core, wherein the conductive terminals are electrically coupled to the outer redistribution layer.
6. The manufacturing method according to claim 1 , wherein after forming the bonding film and the redistribution substrate, a top surface of the bonding film is coplanar with a top surface of the redistribution substrate opposite to the core.