Methods of forming conductive contact structures to semiconductor devices and the resulting structures

1. A method, comprising:

forming first and second lower conductive structures;

forming a layer of insulating material comprising a first material above said first and second lower conductive structures;

forming a contact etching structure in said layer of insulating material, wherein said contact etching structure comprises a second material that is different than said first material and wherein at least a portion of said contact etching structure is positioned laterally between at least a portion of said first lower conductive structure and at least a portion of said second lower conductive structure;

forming a first conductive line and a first conductive contact adjacent a first side of said contact etching structure, wherein said first conductive contact is conductively coupled to said first lower conductive structure; and

forming a second conductive line and a second conductive contact adjacent a second side of said contact etching structure, said second side of said contact etching structure being opposite said first side of said contact etching structure, wherein said second conductive contact is conductively coupled to said second lower conductive structure and wherein a spacing between said first and second conductive lines is approximately equal to a dimension of said contact etching structure.

2. The method of claim 1 , wherein at least a portion of said first conductive line is positioned on and in contact with said first side of said contact etching structure and at least a portion of said second conductive line is positioned on and in contact with said second side of said contact etching structure.

3. The method of claim 1 , wherein said contact etching structure has a vertical height that is greater than a thickness of said layer of insulating material.

4. The method of claim 1 , wherein an edge of said first conductive line and an edge of said second conductive line are each self-aligned with respect to said contact etching structure.

5. The method of claim 1 , wherein said first conductive line, said second conductive line and said contact etching structure are formed such that an upper surface of said first conductive line, an upper surface of said second conductive line and an upper surface of said contact etching structure are all positioned at approximately a same first level above a semiconductor substrate.

6. The method of claim 5 , wherein said layer of insulating material has an upper surface that is positioned at said first level.

7. The method of claim 1 , wherein a portion of said contact etching structure extends into a trench formed in a semiconductor substrate.

8. The method of claim 1 , wherein said contact etching structure is positioned between an entirety of said first lower conductive structure and an entirety of said second lower conductive structure.

9. The method of claim 1 , wherein said contact etching structure is a single diffusion break (SDB) structure that is formed through a first gate of an integrated circuit product, said first conductive contact is a first source/drain contact that is conductively coupled to a first source/drain region positioned adjacent a first side of said SDB structure, and said second conductive contact is a second source/drain contact that is conductively coupled to a second source/drain region positioned adjacent a second side of said SDB structure.

10. The method of claim 9 , wherein said first source/drain region is for a first transistor and said second source/drain region is for a second transistor that is different from said first transistor.

11. The method of claim 1 , wherein a portion of said contact etching structure is positioned on and in contact with a surface of each of said first and second lower conductive structures.

12. The method of claim 1 , wherein a bottom surface of said contact etching structure is positioned on and in contact with a second layer of insulating material that is positioned between said first and second lower conductive structures.

13. The method of claim 1 , wherein said contact etching structure is a gate contact etching post, said first conductive contact is a first gate contact that is conductively coupled to a first lower gate contact structure of a gate structure of a first gate, and said second conductive contact is a second gate contact that is conductively coupled to a second lower gate contact structure of a gate structure of a second gate.

14. A method, comprising:

forming a single diffusion break (SDB) structure through a first gate of an integrated circuit product; and

forming a first conductive line and a first conductive source/drain contact on a first side of said SDB structure and a second conductive line and a second conductive source/drain contact on a second side of said SDB structure, said second side being opposite said first side, wherein said first conductive source/drain contact is conductively coupled to a first source/drain region positioned on said first side of said SDB structure and said second conductive source/drain contact is conductively coupled to a second source/drain region positioned on said second side of said SDB structure, wherein a tip-to-tip spacing between said first and second conductive lines is approximately equal to a dimension of said SDB structure.

15. The method of claim 14 , wherein an edge of said first conductive line and an edge of said second conductive line are each self-aligned with respect to said SDB structure.

16. The method of claim 14 , wherein said first conductive line, said second conductive line and said SDB structure are formed such that an upper surface of said first conductive line, an upper surface of said second conductive line and an upper surface of said SDB structure are all positioned at approximately a same first level above a semiconductor substrate.

17. The method of claim 16 , wherein the method further comprises forming a layer of insulating material above said semiconductor substrate, wherein said layer of insulating material has an upper surface that is positioned at said first level.

18. The method of claim 16 , wherein a portion of said SDB structure extends into a trench formed in said semiconductor substrate.

19. The method of claim 18 , wherein said SDB structure comprises a first material and said layer of insulating material comprises a second material that is different than said first material.

20. The method of claim 14 , wherein the method further comprises:

forming a first and a second lower gate contact structure to a gate structure of each of second and third gates, respectively;

forming a layer of insulating material above said second and third gates;

forming a gate contact etching post in said layer of insulating material; and

forming a third conductive line and a first gate contact on a first side of said gate contact etching post and a fourth conductive line and a second gate contact on a second side of said gate contact etching post, said second side of said gate contact etching post being opposite said first side of said gate contact etching post, wherein said first gate contact is conductively coupled to said first lower gate contact structure positioned on said first side of said gate contact etching post and said second gate contact is conductively coupled to said second lower gate contact structure positioned on said second side of said gate contact etching post, wherein a tip-to-tip spacing between said third and fourth conductive lines is approximately equal to a dimension of said gate contact etching post.