Semiconductor package, and a method for forming a semiconductor package
A semiconductor package includes a semiconductor die arranged on a substrate. The semiconductor package includes a stiffener structure arranged on the substrate. The stiffener structure is spaced at a distance from the semiconductor die. The stiffener structure includes a molding compound material.
1. A semiconductor package, comprising:
a semiconductor die arranged on a substrate; and
a stiffener structure arranged directly on the substrate, wherein the stiffener structure is spaced at a distance from the semiconductor die, and wherein the stiffener structure comprises a molding compound material.
2. The semiconductor package according to claim 1 , wherein the stiffener structure is an electrically insulating stiffener structure.
3. The semiconductor package according to claim 1 , wherein the stiffener structure covers less than 70% of a total area of a surface of the substrate on which the semiconductor die is disposed.
4. The semiconductor package according to claim 1 , wherein a maximal width of the stiffener structure is smaller than a maximal length of the semiconductor die.
5. The semiconductor package according to claim 1 , wherein a maximal thickness of the stiffener structure is less than 3 times a maximal thickness of the semiconductor die.
6. The semiconductor package according to claim 1 , wherein the distance between the semiconductor die and the stiffener structure at a surface of the substrate is between 5% and 95% of a maximal length of the semiconductor die.
7. The semiconductor package according to claim 1 , wherein the distance between the semiconductor die and the stiffener structure at a surface of the substrate is larger than 10 um.
8. The semiconductor package according to claim 1 , wherein the distance between the semiconductor die and the stiffener structure at a surface of the substrate is smaller than 20 mm.
9. The semiconductor package according to claim 1 , wherein a young's modulus of the stiffener structure is larger than 10 GPa.
10. The semiconductor package according to claim 1 , wherein a first portion of the stiffener structure is arranged at a distance from a first edge of the semiconductor die, and wherein a second portion of the stiffener structure is arranged at a distance from a second opposite edge of the semiconductor die.
11. The semiconductor package according to claim 1 , wherein the semiconductor die is free from the stiffener structure.
12. The semiconductor package according to claim 1 , further comprising at least one die side component arranged on the substrate, wherein the stiffener structure covers at least part of the at least one die side component.
13. The semiconductor package according to claim 12 , wherein the stiffener structure encapsulates the at least one die side component.
14. The semiconductor package according to claim 1 , further comprising a heat spreader structure thermally contacting the semiconductor die, wherein the stiffener structure is arranged between the heat spreader structure and the substrate.
15. The semiconductor package according to claim 1 , wherein the semiconductor die is electrically connected to the substrate via a plurality of solder structures.
16. The semiconductor package according to claim 1 , wherein the substrate comprises a solder grid array arranged on an opposite surface of the substrate from the semiconductor die.
17. The semiconductor package according to claim 1 , wherein the semiconductor package is a bare die semiconductor package.
18. The semiconductor package according to claim 17 , wherein the stiffener structure and the semiconductor die are free from encapsulation material.
19. A method for forming a semiconductor package, the method comprising
arranging at least one semiconductor die on a substrate; and
forming a stiffener structure directly on the substrate, wherein the stiffener structure is spaced at a distance from the at least one semiconductor die, and wherein the stiffener structure comprises a molding compound material.
20. The method according to claim 19 , wherein forming the stiffener structure on the substrate comprises dispensing the molding compound material onto the substrate to form the stiffener structure.
21. The method according to claim 19 , wherein the stiffener structure is formed on the substrate before arranging the at least one semiconductor die on the substrate.
22. The method according to claim 19 , further comprising arranging at least one die side component on the substrate structure at a distance from the at least one semiconductor die, and forming the stiffener structure so that the stiffener structure covers at least part of the at least one die side component.
23. The method according to claim 19 , further comprising
forming a sealing material on the stiffener structure; and
attaching a heat spreader structure to the stiffener structure via the sealing material.
24. The method according to claim 19 , further comprising connecting the substrate to a printed circuit board without forming an encapsulation material on the at least one semiconductor die before connecting substrate to the printed circuit board.