Method of forming a contact structure for a FinFET semiconductor device
A semiconductor device includes a gate structure formed over a channel region of the semiconductor device, a source/drain region adjacent the channel region, and an electrically conductive contact layer over the source/drain region. The source/drain region includes a first epitaxial layer having a first material composition and a second epitaxial layer formed over the first epitaxial layer. The second epitaxial layer has a second material composition different from the first composition. The electrically conductive contact layer is in contact with the first and second epitaxial layers. A bottom of the electrically conductive contact layer is located below an uppermost portion of the first epitaxial layer.
1. A method of manufacturing a semiconductor device including a FinFET, the method comprising:
forming a first epitaxial layer at a source/drain region of a fin structure for the FinFET;
forming a second epitaxial layer over the first epitaxial layer, the second epitaxial layer having a material composition different from the first epitaxial layer;
forming an interlayer dielectric (ILD) layer over the first and second epitaxial layers; and
forming a contact opening by etching a part of the ILD layer and a part of the second epitaxial layer,
wherein the first epitaxial layer protrudes from a bottom of the contact opening.
2. The method of claim 1 , further comprising forming an electrically conductive contact layer in contact with the first and second epitaxial layers in the contact opening,
wherein a bottom of the electrically conductive contact layer is located below an uppermost portion of the first epitaxial layer.
3. The method according to claim 1 , wherein:
the FinFET is a p-type, and
the first epitaxial layer comprises Si 1-x Ge x and the second epitaxial layer comprises Si 1-y Ge y , where x<y.
4. The method according to claim 3 , wherein the first epitaxial layer comprises Si 1-x Ge x , where 0.01<x<0.4.
5. The method according to claim 4 , wherein the first epitaxial layer further comprises at least one of B and Ga in an amount of 5.0×10 19 atoms/cm 3 to 1.0×10 21 atoms/cm 3 .
6. The method according to claim 3 , wherein the second epitaxial layer comprises Si 1-y Ge y , where 0.2<y<0.8.
7. The method according to claim 4 , wherein the second epitaxial layer further comprises at last one of B and Ga in an amount of 1.0×10 20 atoms/cm 3 to 3.0×10 21 atoms/cm 3 .
8. The method according to claim 3 , wherein:
the first epitaxial layer and the second epitaxial layer further comprise at least one of B and Ga, and
an amount of at least one of B and Ga in the first epitaxial layer is smaller than an amount of at least one of B and Ga in the second epitaxial layer.
9. The method according to claim 3 , further comprising forming a capping layer made of a semiconductor material on the second epitaxial layer.
10. The method according to claim 9 , wherein the capping layer is an epitaxial layer comprising Si 1-z Ge z , where 0≤z<0.4, where z<y.
11. The method according to claim 10 , wherein the capping layer further comprises at least one of B and Ga in an amount of 5.0×10 19 atoms/cm 3 to 1.0×10 21 atoms/cm 3 .
12. A method of manufacturing a semiconductor device including a FinFET, the method comprising:
forming a first fin structure and a second fin structure over a substrate such that upper portions of the first and second fin structures protrude from an isolation insulating layer;
forming a gate structure over parts of the first and second fin structures;
forming a spacer material layer on sidewalls of the first and second fin structures protruding from the isolation insulating layer and not covered by the gate structure, and on an upper surface of the isolation insulating layer;
recessing upper portions of the first and second fin structures, thereby forming a recessed first fin structure and a recessed second fin structure;
forming first epitaxial layers over the recessed first and second fin structures, respectively, the first epitaxial layers being separated from each other;
forming a second epitaxial layer over the first epitaxial layers, the second epitaxial layer having a material composition different from the first epitaxial layer;
forming an interlayer dielectric (ILD) layer over the first and second epitaxial layers; and
forming a contact opening by etching a part of the ILD layer and a part of the second epitaxial layer,
wherein the first epitaxial layers protrude from a bottom of the contact opening.
13. The method of claim 12 , wherein a void is formed between the second epitaxial layer and the upper surface of the isolation insulating layer.
14. The method of claim 12 , wherein:
in the recessing upper portions of the first and second fin structures, lower portions of the spacer material layer disposed on the sidewalls of the first and second fin structures and the spacer material layer disposed on the upper surface of the isolation insulating layer remain, and
a void is formed between the second epitaxial layer and the remaining spacer material layer on the upper surface of the isolation insulating layer.
15. The method of claim 12 , further comprising forming an electrically conductive contact layer in contact with the first and second epitaxial layers in the contact opening,
wherein a bottom of the electrically conductive contact layer is located below an uppermost portion of the first epitaxial layers.
16. The method according to claim 15 , wherein:
the FinFET is a p-type, and
the first epitaxial layer comprises Si 1-x Ge x and the second epitaxial layer comprises Si 1-y Ge y , where x<y.
17. The method according to claim 15 , wherein:
the first epitaxial layers comprise Si 1-x Ge x , where 0.01<x<0.4, and
the second epitaxial layer comprises Si 1-y Ge y , where 0.2<y<0.8.
18. The method according to claim 17 , wherein:
the first epitaxial layers further comprise at least one of B and Ga in an amount of 5.0×10 19 atoms/cm 3 to 1.0×10 21 atoms/cm 3 ,
the second epitaxial layer further comprises at last one of B and Ga in an amount of 1.0×10 20 atoms/cm 3 to 3.0×10 21 atoms/cm 3 , and
an amount of at least one of B and Ga in the first epitaxial layers is smaller than an amount of at least one of B and Ga in the second epitaxial layer.
19. The method according to claim 12 , wherein an aspect ratio H/W of the first epitaxial layers is in a range from 4 to 20, where H is a height of the first epitaxial layers from the upper surface of the isolation insulating layer and W is a largest width of the first epitaxial layer along a direction in which the gate structure extends.
20. A method of manufacturing a semiconductor device including a FinFET, the method comprising:
forming three or more fin structures over a substrate such that upper portions of the fin structures protruding from an isolation insulating layer;
forming a gate structure over parts of the fin structures;
recessing upper portions of the fin structures, thereby forming recessed fin structures;
forming first epitaxial layers over the recessed, respectively, the first epitaxial layers being separated from each other;
forming a second epitaxial layer over the first epitaxial layers, the second epitaxial layer having a material composition different from the first epitaxial layer;
forming a third epitaxial layer over the second epitaxial layer, the third epitaxial layer having a material composition different from the second epitaxial layer;
forming an interlayer dielectric (ILD) layer over the first, second and third epitaxial layers; and
forming a contact opening by etching a part of the ILD layer and a part of the third and second epitaxial layers,
wherein an aspect ratio H/W of the first epitaxial layers is in a range from 4 to 20, where H is a height of the first epitaxial layers from the upper surface of the isolation insulating layer and W is a largest width of the first epitaxial layers along a direction in which the gate structure extends.