Method and apparatus for forming nitride film
A method for forming a nitride film is provided. The method includes preparing a substrate to be processed, the substrate having a first base film formed of a material having a relatively long incubation time and a second base film formed of a material having a relatively short incubation time with respect to a nitride film, forming a nitride film on the substrate by means of ALD or CVD using a raw material gas and a nitriding gas while heating the substrate to a predetermined temperature, and etching nitride on the first base film to be removed by supplying an etching gas to thereby expose a film surface of the first base film, wherein the forming the nitride film and the etching the nitride are repeatedly performed a predetermined number of times to selectively form the nitride film on the second base film.
1. A method for forming a nitride film, the method comprising:
a first process of preparing a substrate to be processed, the substrate having a first base film formed of a material having a relatively long incubation time and a second base film formed of a material having a relatively short incubation time with respect to a nitride film;
a second process of forming a nitride film on the substrate by means of ALD or CVD using a raw material gas and a nitriding gas while heating the substrate to a predetermined temperature; and
a third process of etching and removing nitride formed on the first base film by supplying an etching gas, thereby exposing a film surface of the first base film,
wherein the second process and the third process are repeatedly performed a predetermined number of times to selectively form the nitride film on the second base film.
2. The method of claim 1 , wherein when the second process is performed by means of the ALD, the raw material gas is initially supplied.
3. The method of claim 1 , wherein the etching gas is a gas that is relatively easy to etch the nitride film and is relatively difficult to etch the first base film.
4. The method of claim 1 , further comprising after the first process and prior to the second process, a fourth process of performing pre-processing by supplying a chlorine-containing gas while heating the substrate to a predetermined temperature, to adsorb the chlorine-containing gas onto surfaces of the first base film and the second base film,
wherein the fourth process, the second process and the third process are repeated a predetermined number of times to selectively form the nitride film on the second base film.
5. The method of claim 4 , wherein the chlorine-containing gas used in the fourth process is at least one selected from a Cl 2 gas, a HCl gas and a BCl 3 gas.
6. The method of claim 1 , wherein the first base film is a silicon oxide film, the second base film is a silicon nitride film, and the nitride film formed on the first and second base films is a silicon nitride film.
7. The method of claim 6 , wherein a Si raw material gas used to form the silicon nitride film is one of a dichloro silane, a monochloro silane, a trichloro silane, a silicon tetracloride, a hexachloro disilane, a monosilane, a disilane, or an organosilane-based compound.
8. The method of claim 6 , wherein the etching gas comprises a fluorine gas and an oxidizing gas.
9. The method of claim 8 , wherein the etching gas further comprises at least one of a hydrogen fluoride gas or a hydrocarbon-based compound gas.
10. The method of claim 6 , wherein the etching gas is a gas denoted by CH x F y (x being 0 or an integer of 1 or more, and y being an integer of 1 or more).
11. The method of claim 6 , wherein the etching gas is a gas denoted by NF x R y (R being hydrocarbon, x being an integer of 1 or more, and y being 0 or an integer of 1 or more).
12. The method of claim 6 , wherein the second process is performed at a temperature of 400 to 650 degrees C. in the case of the ALD and at a temperature of 600 to 800 degrees C. in the case of the CVD.
13. The method of claim 1 , wherein the second process and the third process are continuously performed in the same apparatus.
14. The method of claim 13 , wherein the second process and the third process are performed at the same temperature.
15. The method of claim 1 , wherein the nitriding gas used in the second process is an ammonia gas, a hydrazine gas, or a derivative gas of hydrazine.
16. A non-transitory storage medium storing a program executed in a computer and for controlling an apparatus for forming a nitride film,
wherein the program is executed to control the apparatus for forming the nitride film to perform the method of forming the nitride film of claim 1 .
17. An apparatus for selectively forming a nitride film on a second base film of a substrate to be processed, the substrate having a first base film formed of a material having a relatively long incubation time and the second base film formed of a material having a relatively short incubation time with respect to the nitride film, the apparatus comprising:
a process chamber in which the substrate is accommodated;
a gas supply mechanism which supplies a raw material gas, a nitriding gas, and an etching gas into the process chamber, and a heating device that heats a plurality of substrates accommodated in the process chamber;
an exhaust device which exhausts an inside of the process chamber; and
a controller that performs a control for a first process of disposing the substrate within the process chamber, a second process of forming the nitride film on the substrate by means of ALD or CVD by supplying a raw material gas and a nitriding gas into the process chamber while heating the substrate to a predetermined temperature, subsequently a third process of etching and removing nitride formed on the first base film by supplying the etching gas to thereby expose a film surface of the first base film, and a fourth process of repeating the second process and the third process a predetermined number of times.
18. The apparatus of claim 17 , wherein the first base film is a silicon oxide film, the second base film is a silicon nitride film, and the nitride film formed on the first and second base films is a silicon nitride film.
19. The apparatus of claim 18 , wherein a Si raw material gas used to form the silicon nitride film is one of a dichloro silane, a monochloro silane, a trichloro silane, a silicon tetracloride, a hexachloro disilane, a monosilane, a disilane or an organosilane-based compound.
20. The apparatus of claim 18 , wherein the etching gas comprises a fluorine gas and an oxidizing gas.
21. The apparatus of claim 20 , wherein the etching gas further comprises at least one of a hydrogen fluoride gas or a hydrocarbon-based compound gas.
22. The apparatus of claim 18 , wherein the etching gas is a gas denoted by CH x F y (x being 0 or an integer of 1 or more, and y being an integer of 1 or more).
23. The apparatus of claim 18 , wherein the etching gas is a gas denoted by NF x R y (R being hydrocarbon, x being an integer of 1 or more, and y being 0 or an integer of 1 or more).
24. The apparatus of claim 17 , wherein the nitriding gas used in the second process is an ammonia gas, a hydrazine gas, or a derivative gas of hydrazine.