Method for manufacturing semiconductor substrate, semiconductor substrate, method for manufacturing combined semiconductor substrate, combined semiconductor substrate, and semiconductor-joined substrate
A method for manufacturing a semiconductor substrate according to the present invention includes preparing a seed substrate containing a semiconductor material, forming an ion implanted layer at a certain depth from a front surface of a main surface of the seed substrate by implanting ions into the seed substrate, growing a semiconductor layer on the main surface of the seed substrate with a vapor-phase synthesis method, and separating a semiconductor substrate including the semiconductor layer and a part of the seed substrate by irradiating the front surface of the main surface of at least any of the semiconductor layer and the seed substrate with light.
1. A method for manufacturing a semiconductor substrate comprising:
preparing a seed substrate containing a semiconductor material;
forming an ion implanted layer at a certain depth from a front surface of a main surface of the seed substrate by implanting ions into the seed substrate;
growing a semiconductor layer on the main surface of the seed substrate with a vapor-phase synthesis method; and
separating a semiconductor substrate including the semiconductor layer and a part of the seed substrate by irradiating the front surface of the main surface of at least any of the semiconductor layer and the seed substrate with light, wherein
the semiconductor layer is a homo epitaxial growth layer.
2. The method for manufacturing a semiconductor substrate according to claim 1 , wherein
the ion implanted layer has a thickness not smaller than 50 nm and not greater than 10 μm, and
a dose of ions is within a range not less than 1×10 14 cm −2 and not more than 2×10 18 cm −2 .
3. The method for manufacturing a semiconductor substrate according to claim 1 , wherein
the ions including at least one element selected from the group consisting of hydrogen, oxygen, nitrogen, carbon, helium, neon, and argon are implanted.
4. The method for manufacturing a semiconductor substrate according to claim 1 , wherein
the light is pulsed light, and irradiation fluence per pulse at the front surface of the main surface irradiated with the light is not lower than 0.01 J/mm 2 and not higher than 1500 J/mm 2 .
5. The method for manufacturing a semiconductor substrate according to claim 1 , wherein
the light is pulsed light, and pulse energy at the front surface of the main surface irradiated with the light is not lower than 0.05 mJ and not higher than 1000 mJ.
6. The method for manufacturing a semiconductor substrate according to claim 1 , wherein
the light is laser beams and scans the front surface of the main surface irradiated with the light.
7. The method for manufacturing a semiconductor substrate according to claim 1 , wherein
the separating a semiconductor substrate is performed in a liquid.
8. The method for manufacturing a semiconductor substrate according to claim 1 , wherein
the semiconductor layer contains at least one selected from the group consisting of diamond, aluminum nitride, gallium nitride, silicon carbide, zinc selenide, and zinc sulfide.