Semiconductor structure having tapered damascene aperture and method of the same
A semiconductor structure having tapered damascene aperture is disclosed. The semiconductor structure including an etching stop layer over an inter-layer dielectric (ILD) layer, a low-k dielectric layer over the etching stop layer, and a tapered aperture at least going into the low-k dielectric layer; wherein the tapered aperture is filled with copper (Cu), a width of a mouth surface portion of the aperture tapers inwardly from a first, wider width to a second, narrower width at a bottom surface portion of the aperture, and the width of the bottom surface portion of the tapered aperture is less than 50 nm. Associated methods of fabricating a semiconductor structure are also disclosed.
1. A semiconductor structure, comprising:
an etching stop layer over an inter-layer dielectric (ILD) layer;
a low-k dielectric layer over the etching stop layer; and
a tapered recess at least going into the low-k dielectric layer;
wherein the tapered recess is filled with a conductor comprising at least copper (Cu), a width of a mouth surface portion of the tapered recess tapers inwardly from a first, wider width to a second, narrower width at a bottom surface portion of the tapered recess, the width of the bottom surface portion of the tapered recess is less than 50 nm, and a bottommost surface of the conductor is lower than a bottommost surface of the etching stop layer.
2. The semiconductor structure of claim 1 , wherein the tapered recess goes through the low-k dielectric layer and stops at the etching stop layer.
3. The semiconductor structure of claim 1 , wherein the conductor further comprises a barrier layer covering sidewalls and the bottom surface of the tapered recess.
4. The semiconductor structure of claim 3 , wherein the conductor further comprises a seed layer over the barrier layer.
5. The semiconductor structure of claim 1 , wherein the etching stop layer comprises a material selected from a group consisting essentially of SiC, SIN, tetra-ethyl-ortho-silicate (TEOS), or hard black diamond (HBD).
6. The semiconductor structure of claim 1 , wherein the low-k dielectric layer comprises a low dielectric constant material having a dielectric constant of about 3 or an extra low dielectric constant material having a dielectric constant of about 2.5.
7. The semiconductor structure of claim 3 , wherein the barrier layer comprises a material selected from a group consisting essentially of tantalum nitride, tantalum, titanium, and titanium nitride.
8. The semiconductor structure of claim 4 , wherein the seed layer comprises copper (Cu).
9. A semiconductor structure, comprising:
an etching stop layer;
a dielectric layer over the etching stop layer;
a first tapered recess in the dielectric layer; and
a second tapered recess in the dielectric layer and separate from the first tapered recess;
wherein a depth of the first tapered recess is greater than a depth of the second tapered recess, each of the tapered recesses is filled with a conductor, and each of the tapered recesses tapers inwardly from a mouth surface portion to a bottom surface portion;
wherein a width of the mouth surface portion is greater than a width of the bottom surface portion, and a bottommost surface of the conductor in the first tapered recess is lower than a bottommost surface of the etching stop layer.
10. The semiconductor structure of claim 9 , wherein the first tapered recess goes through the dielectric layer and stops at the etching stop layer.
11. The semiconductor structure of claim 9 , wherein the conductor further comprises a barrier layer covering sidewalls and the bottom surface of the first tapered recess and the second tapered recess.
12. The semiconductor structure of claim 11 , wherein the conductor further comprises a seed layer over the barrier layer.
13. The semiconductor structure of claim 9 , wherein the etching stop layer comprises a material selected from a group consisting essentially of SiC, SIN, tetra-ethyl-ortho-silicate (TEOS), or hard black diamond (HBD).
14. The semiconductor structure of claim 9 , wherein the dielectric layer comprises a low dielectric constant material having a dielectric constant of about 3 or an extra low dielectric constant material having a dielectric constant of about 2.5.
15. The semiconductor structure of claim 9 , wherein the width of the bottom surface portion of the first tapered recess is less than 50 nm.
16. A semiconductor structure, comprising:
an inter-layer dielectric (ILD) layer;
an etching stop layer over the ILD layer;
a dielectric layer over the etching stop layer;
a first tapered recess going through the dielectric layer and the etching stop layer; and
a second tapered recess going into the dielectric layer and not reaching the etching stop layer;
wherein the first tapered recess and the second tapered recess are filled with a conductor, a width of a mouth surface portion of each tapered recess tapers inwardly from a first, wider width to a second, narrower width at a bottom surface portion of each tapered recess, the first tapered recess is separate from the second tapered recess, and a bottommost surface of the conductor in the first tapered recess is lower than a top most surface of a metal layer in the ILD.
17. The semiconductor structure of claim 16 , wherein the conductor filled in the first tapered recess is coupled to the metal layer in the ILD.
18. The semiconductor structure of claim 16 , wherein the width of the bottom surface portion of the first tapered recess is less than 50 nm.
19. The semiconductor structure of claim 16 , wherein the conductor further comprises a barrier layer covering sidewalls and the bottom surface of each tapered recess.
20. The semiconductor structure of claim 19 , wherein the conductor further comprises a seed layer over the barrier layer.