Nitride film forming method and storage medium
There is provided a nitride film forming method which includes: performing a pretreatment in which a chlorine-containing gas is supplied while heating a substrate to be processed having a first base film and a second base film formed on the substrate to a predetermined temperature, and is adsorbed onto a surface of the first base film and a surface of the second base film; and forming a nitride film on the first base film and the second base film subjected to the pretreatment, by an ALD method or a CVD method, using a raw material gas and a nitriding gas, while heating the substrate to be processed to a predetermined temperature.
1. A nitride film forming method, comprising:
performing a pretreatment of adsorbing a chlorine-containing gas onto a surface of a first base film and a surface of a second base film, the first base film and the second base film being formed on a substrate to be processed, by supplying the chlorine-containing gas while heating the substrate to be processed to a predetermined temperature; and
forming a nitride film on the first base film and the second base film subjected to the pretreatment, by an ALD method or a CVD method, using a raw material gas and a nitriding gas, while heating the substrate to be processed to a predetermined temperature,
wherein the chlorine-containing gas used in the step of performing the pretreatment is at least one gas selected from a group consisting of a Cl 2 gas, a HCl gas and a BCl 3 gas.
2. The method of claim 1 , wherein in a case where the step of forming the nitride film is performed by the ALD method, the raw material gas is supplied at first.
3. The method of claim 1 , wherein the first base film is relatively high in adsorptivity of the chlorine-containing gas and the second base film is relatively low in adsorptivity of the chlorine-containing gas.
4. The method of claim 3 , wherein the first base film is a silicon oxide film, the second base film is a silicon nitride film, and the nitride film formed on the first base film and the second base film is a silicon nitride film.
5. The method of claim 4 , wherein a raw material gas used for forming the silicon nitride film is any one of dichlorosilane, monochlorosilane, trichlorosilane, silicon tetrachloride, hexachlorodisilane, monosilane, disilane and an organic silane-based compound.
6. The method of claim 4 , wherein the step of forming the nitride film is performed at 400 to 700 degrees C. in the case of the ALD method and at 600 to 800 degrees C. in the case of the CVD method.
7. The method of claim 1 , wherein the step of performing the pretreatment is performed at 200 to 800 degrees C.
8. The method of claim 1 , wherein the step of performing the pretreatment and the step of forming the nitride film are continuously performed in the same apparatus.
9. The method of claim 8 , wherein the step of performing the pretreatment and the step of forming the nitride film are performed at the same temperature.
10. The method of claim 1 , wherein the nitriding gas used in the step of forming the nitride film is an ammonia gas, a hydrazine gas, or a hydrazine derivative gas.
11. A non-transitory computer-readable storage medium storing a program operated on a computer and configured to control a processing apparatus,
wherein the program is configured to, when executed, cause the computer to control the processing apparatus so that the method of claim 1 is performed.