Semiconductor devices having work function metal films and tuning materials
A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.
1. A semiconductor device comprising:
a first fin-type transistor comprising a first fin, a first trench on the first fin, a first dielectric film extending along inner walls of the first trench and a first work function metal film in the first trench, the first work function metal film being of a first conductivity type;
a second fin-type transistor comprising a second fin, a second trench on the second fin, a second dielectric film extending along inner walls of the second trench and a second work function metal film in the second trench, the second work function metal film being of the first conductivity type; and
a third fin-type transistor comprising a third fin, a third trench on the third fin, a third dielectric film extending along inner walls of the third trench and a third work function metal film in the third trench, the third work function metal film being of the first conductivity type,
wherein the first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material,
wherein a first thickness of the first work function metal film is different from a third thickness of the third work function metal film, and
wherein an effective work function of the first work function metal film, an effective work function of the second work function metal film and an effective work function of the third work function metal film are different from one another.
2. The semiconductor device of claim 1 , wherein a difference between the effective work function of the first work function metal film and the effective work function of the second work function metal film is equal to or less than 60 mV.
3. The semiconductor device of claim 1 , wherein a difference between the effective work function of the first work function metal film and the effective work function of the third work function metal film is equal to or larger than 80 mV.
4. The semiconductor device of claim 1 , wherein each of the first to third fins is doped with source/drain ions of a same concentration.
5. The semiconductor device of claim 1 , wherein each of the first to third fins is not doped with halo ions.
6. The semiconductor device of claim 1 , wherein the third dielectric film comprises the work function tuning material.
7. The semiconductor device of claim 1 , further comprising:
a fifth fin-type transistor comprising a fifth fin, a fifth trench on the fifth fin, a fifth dielectric film extending along inner walls of the fifth trench and a fifth work function metal film on the fifth dielectric film in the fifth trench, the fifth work function metal film being of a second conductivity type; and
a sixth fin-type transistor comprising a sixth fin, a sixth trench on the sixth fin, a sixth dielectric film extending along inner walls of the sixth trench and a sixth work function metal film on the sixth dielectric film in the sixth trench, the sixth work function metal film being of the second conductivity type,
wherein a work function metal film of the first conductivity type is not disposed between the fifth dielectric film and the fifth work function metal film,
wherein a work function metal film of the first conductivity type is not disposed between the sixth dielectric film and the sixth work function metal film,
wherein the fifth dielectric film comprises the work function tuning material and the sixth dielectric film does not comprise the work function tuning material, and
wherein a thickness of the fifth work function metal film is substantially equal to a thickness of the sixth work function metal film.
8. The semiconductor device of claim 1 , further comprising:
a first protection film and a first etch stop layer disposed between the first dielectric film and the first work function metal film;
a second protection film and a second etch stop layer disposed between the second dielectric film and the second work function metal film; and
a third protection film and a third etch stop layer disposed between the third dielectric film and the third work function metal film,
wherein each of the first protection film to the third protection film comprises titanium nitride (TiN), and
wherein each of the first etch stop layer to the third etch stop layer comprises tantalum nitride (TaN).
9. A semiconductor device comprising:
a first fin-type transistor comprising a first fin, a first trench on the first fin, a first dielectric film extending along inner walls of the first trench and a first work function metal film in the first trench, the first work function metal film being of a second conductivity type;
a second fin-type transistor comprising a second fin, a second trench on the second fin, a second dielectric film extending along inner walls of the second trench and a second work function metal film in the second trench, the second work function metal film being of the second conductivity type; and
a third fin-type transistor comprising a third fin, a third trench on the third fin, a third dielectric film extending along inner walls of the third trench and a third work function metal film and a fourth work function metal film sequentially provided in the third trench, the third work function metal film being of a first conductivity type and the fourth work function metal film being of the second conductivity type,
wherein no work function metal film of the first conductivity type is between the first dielectric film and the first work function metal film or between the second dielectric film and the second work function metal film, and
wherein the first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material.
10. The semiconductor device of claim 9 , wherein the first fin-type transistor to the third fin-type transistor have different threshold voltages.
11. The semiconductor device of claim 9 , wherein a difference between an effective work function of the first work function metal film and an effective work function of the second work function metal film is equal to or less than 60 mV.
12. The semiconductor device of claim 9 , wherein a difference between an effective work function of the first work function metal film and an effective work function of the third work function metal film is equal to or larger than 80 mV.
13. The semiconductor device of claim 9 , wherein each of the first to third fins is doped with source/drain ions of a same concentration.
14. The semiconductor device of claim 9 , wherein each of the first to third fins is not doped with halo ions.
15. The semiconductor device of claim 9 , wherein each of the first fin-type transistor to the third fin-type transistor is an n-type transistor.
16. The semiconductor device of claim 9 , wherein the third dielectric film comprises the work function tuning material.
17. The semiconductor device of claim 16 , further comprising:
a fourth fin-type transistor comprising a fourth fin, a fourth trench on the fourth fin, a fourth dielectric film extending along inner walls of the fourth trench and a fifth work function metal film and a sixth work function metal film sequentially provided in the fourth trench, the fifth work function metal film being of the first conductivity type and the sixth work function metal film being of the second conductivity type,
wherein the fourth dielectric film does not comprise the work function tuning material.
18. A semiconductor device comprising:
a first fin-type transistor comprising a first fin, a first trench on the first fin, a first dielectric film extending along inner walls of the first trench and a first work function metal film in the first trench, the first work function metal film being of a first conductivity type;
a second fin-type transistor comprising a second fin, a second trench on the second fin, a second dielectric film extending along inner walls of the second trench and a second work function metal film in the second trench, the second work function metal film being of the first conductivity type; and
a third fin-type transistor comprising a third fin, a third trench on the third fin, a third dielectric film extending along inner walls of the third trench and a third work function metal film in the third trench, the third work function metal film being of the first conductivity type,
wherein an oxygen concentration in the first work function metal film is lower than an oxygen concentration in the second work function metal film, and
wherein a first thickness of the first work function metal film is different from a third thickness of the third work function metal film.
19. The semiconductor device of claim 18 , wherein the oxygen concentration in the first work function metal film is substantially equal to an oxygen concentration in the third work function metal film.
20. The semiconductor device of claim 18 , wherein the first thickness is substantially equal to a second thickness of the second work function metal film.