Field-effect transistor (FET) having oxide insulating layer disposed on gate insulating film and between source and drain electrodes, and display element, display and system including said FET, and method of manufacturing said FET
A field-effect transistor includes a gate electrode, a source electrode and a drain electrode to take out electric current according to an application of a voltage to the gate electrode, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, the semiconductor layer forming a channel between the source electrode and the drain electrode, a first insulating layer as gate insulating film disposed between the semiconductor layer and the gate electrode, and a second insulating layer covering at least a part of a surface of the semiconductor layer, the second insulating layer including an oxide including silicon and alkaline earth metal.
1. A field-effect transistor comprising:
a gate electrode;
a source electrode and a drain electrode;
a semiconductor layer disposed adjacent to the source electrode and the drain electrode;
a first insulating layer as gate insulating film disposed between the semiconductor layer and the gate electrode; and
a second insulating layer covering at least a part of a surface of the semiconductor layer, the second insulating layer including an oxide including silicon and an alkaline earth metal, wherein molar percent of alkaline earth oxides in the second insulating layer is smaller than molar percent of silicon oxides in the second insulating layer, and wherein the second insulating layer is an etching stopper layer having a form covering at least an area where a channel is formed between the source electrode and the drain electrode.
2. The field-effect transistor according to claim 1 ,
wherein the second insulating layer is etched to have a predetermined form.
3. The field-effect transistor according to claim 1 ,
wherein a top surface of the semiconductor layer in a lamination direction of a substrate abuts the source electrode and the drain electrode, and
wherein the second insulating layer is disposed at a part of a connection interface between the semiconductor layer and the source electrode and a part of a connection interface between the semiconductor layer and the drain electrode.
4. The field-effect transistor according to claim 1 ,
wherein the second insulating layer further includes at least one of aluminum and boron.
5. The field-effect transistor according to claim 1 ,
wherein the semiconductor layer is formed of an oxide semiconductor.
6. A display element comprising:
a drive circuit to output a drive signal, the drive circuit including the field-effect transistor of claim 1 ; and
a light control element to control light output according to the drive signal from the drive circuit.
7. The display element according to claim 6 ,
wherein the light control element includes at least one of an electroluminescent element, an electrochromic element, a liquid crystal element, an electrophoresis element, and an electrowetting element.
8. A display comprising:
a display unit including multiple display elements, each of which is the display element of claim 6 ; and
a display control device configured to individually control the multiple display units.
9. A system comprising:
the display of claim 8 ; and
an image data generating device to supply image data to the display.
10. A method of manufacturing a field-effect transistor, comprising:
forming a first insulating layer as gate insulating film on a gate electrode and a substrate,
forming a semiconductor layer on the first insulating layer, with the first insulating layer interposed between the semiconductor layer and the gate electrode;
forming a second insulating layer covering at least a part of a surface of the semiconductor layer, the second insulating layer including an oxide including silicon and an alkaline earth metal;
covering the semiconductor layer and the second insulating layer to form an electroconductive layer; and
etching the electroconductive layer while using the second insulating layer as an etching stopper to form a source electrode and a drain electrode, adjacent to the semiconductor layer,
wherein molar percent of alkaline earth oxides in the second insulating layer is smaller than molar percent of silicon oxides in the second insulating layer.
11. The method according to claim 10 , further comprising:
forming an initial etching stopper layer on the surface of the semiconductor layer, and etching the initial etching stopper layer to form the second insulating layer, before the step of the etching the electroconductive layer.
12. The method according to claim 11 , wherein the step of etching the second insulating layer is conducted using etching liquid including at least one of ammonium hydrogen fluoride, ammonium fluoride, and hydrogen fluoride.
13. The method according to claim 10 , wherein the step of etching the electroconductive layer is conducted using dry etching.