Pressure sensor and manufacturing method thereof
A pressure sensor and a manufacturing method thereof are provided. The pressure sensor includes a thin-film transistor (TFT) array and a pressure-sensitive layer covering the TFT array. The pressure-sensitive layer includes a plurality of insulating layers and one of one-directional materials arranged on the same plane and two-directional materials. The insulating layers and the one- or two-directional materials are alternately stacked so as to effectively enhance pressure resolution.
1. A pressure sensor, comprising:
a thin-film transistor array; and
a pressure-sensitive layer covering the thin-film transistor array, wherein the pres sure-sensitive layer comprises a plurality of one-directional materials arranged on the same plane and a plurality of insulating layers, and wherein the one-directional materials and the insulating layers are alternately stacked.
2. The pressure sensor of claim 1 , wherein the pressure-sensitive layer is inductive resistive.
3. The pressure sensor of claim 1 , wherein a diameter of the one-directional material is 5 nm to 100 nm.
4. The pressure sensor of claim 1 , wherein an aspect ratio of the one-directional material is greater than 100.
5. The pressure sensor of claim 1 , wherein the one-directional material comprises a metal nanowire, a carbon nanotube, or a metal oxide semiconductor.
6. The pressure sensor of claim 5 , wherein a metal of the metal nanowire comprises gold, silver, or copper.
7. The pressure sensor of claim 5 , wherein a metal oxide of the metal oxide semiconductor comprises zinc oxide, titanium oxide, tungsten oxide, molybdenum oxide, vanadium oxide, copper oxide, nickel oxide, cobalt oxide, iron oxide, or tin oxide.
8. A pressure sensor, comprising:
a thin-film transistor array; and
a pressure-sensitive layer covering the thin-film transistor array, wherein the pressure-sensitive layer comprises a plurality of two-directional materials and a plurality of insulating layers, and wherein the two-directional materials and the insulating layers are alternately stacked.
9. The pressure sensor of claim 8 , wherein the two-directional material comprises graphene oxide or molybdenum disulfide.
10. The pressure sensor of claim 8 , wherein the pressure-sensitive layer is inductive resistive.
11. A manufacturing method of a pressure sensor, comprising:
forming a thin-film transistor array; and
forming a pressure-sensitive layer on the thin-film transistor array by 3D printing, wherein the pressure-sensitive layer comprises a plurality of insulating layers and a plurality of one-directional materials arranged on the same plane that are alternately stacked, or the pressure-sensitive layer comprises the plurality of insulating layers and a plurality of two-directional materials that are alternately stacked.
12. The manufacturing method of the pressure sensor of claim 11 , wherein a diameter of the one-directional material is 5 nm to 100 nm.
13. The manufacturing method of the pressure sensor of claim 11 , wherein an aspect ratio of the one-directional material is greater than 100.
14. The manufacturing method of the pressure sensor of claim 11 , wherein the one-directional material comprises a metal nanowire, a carbon nanotube, or a metal oxide semiconductor, and the two-directional material comprises graphene oxide or molybdenum disulfide.
15. The manufacturing method of the pressure sensor of claim 14 , wherein a metal of the metal nanowire comprises gold, silver, or copper, and a metal oxide of the metal oxide semiconductor comprises zinc oxide, titanium oxide, tungsten oxide, molybdenum oxide, vanadium oxide, copper oxide, nickel oxide, cobalt oxide, iron oxide, or tin oxide.