Handler bonding and debonding for semiconductor dies
Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.
1. A method for processing semiconductor devices, the method comprising:
applying a release layer in contact with a handler;
building semiconductor packaging components in contact with the release layer;
bonding at least one singulated semiconductor device to the semiconductor packaging components;
ablating the release layer by irradiating the release layer through the handler with a laser; and
removing the at least one singulated semiconductor device from the handler after the release layer has been ablated.
2. The method of claim 1 , wherein the release layer comprises one or more additive materials, wherein the additive materials adjust a frequency of light absorption property of the release layer.
3. The method of claim 1 , wherein the handler is transparent.
4. The method of claim 1 , wherein the handler is one of:
a handle wafer;
a panel; and
a roll of handler material.
5. The method of claim 1 , wherein the release layer absorbs a frequency of light radiated from the laser.
6. A system for processing semiconductor devices, the system comprising:
memory;
at least one processor operatively coupled to the memory;
at least one control unit operatively coupled to the memory and the at least one processor, the control unit operating at least one semiconductor device processing component of the system to:
apply a release layer in contact with a handler;
build semiconductor packaging components in contact with the release layer;
bond at least one singulated semiconductor device to the semiconductor packaging components;
ablate the release layer by irradiating the release layer through the handler with a laser; and
remove the at least one singulated semiconductor device from the handler after the release layer has been ablated.
7. The system of claim 6 , wherein the release layer comprises one or more additive materials, wherein the additive materials adjust a frequency of light absorption property of the release layer.
8. The system of claim 6 , wherein the release layer absorbs a frequency of light radiated from the laser.
9. The system of claim 6 , wherein the handler is one of:
a handle wafer;
a panel; and
a roll of handler material.