Backside drill embedded die substrate
A device and method of fabricating are provided. The device includes a substrate having a first side and an opposite second side, a cavity defined within the substrate from the first side, a die coupled to a floor of the cavity and having a conductive pad on a side of the die distal to the floor of the cavity. A laminate layer coupled to the second side of the substrate may be included. A hole may be drilled, at one time, through layers of the device, through the die, and through the conductive pad. The hole extends through and is defined within the laminate layer (if present), the second side of the substrate, the die, and the conductive pad. A conductive material is provided within the hole and extends between and through the laminate layer (if provided), the second side of the substrate, the die, and the conductive pad.
1. A device, comprising:
a substrate having a first side and an opposite second side,
wherein the substrate is a core substrate including a conductive layer, a first dielectric layer coupled to a first surface of the conductive layer, and a second dielectric layer coupled to an opposite second surface of the conductive layer;
a cavity defined within the substrate, wherein:
the cavity is devoid of the first dielectric layer and the conductive layer, and
a floor of the cavity is defined by the second dielectric layer,
wherein sidewalls of the cavity are defined by coplanar surfaces of the first dielectric layer and the conductive layer;
a die coupled to the floor of the cavity, the die having a conductive pad on a side of the die distal to the floor of the cavity;
a hole extending through and defined within the second dielectric layer, the die, and the conductive pad; and
a conductive material within the hole and extending between and through the second dielectric layer, the die, and the conductive pad.
2. The device of claim 1 , wherein the hole is continuous through the second dielectric layer, the die, and the conductive pad.
3. The device of claim 1 , wherein the hole is concentric along a linear axis extending through the second dielectric layer, the die, and the conductive pad.
4. The device of claim 1 , wherein the hole is a single linear hole along a length of the hole.
5. The device of claim 1 , wherein the conductive material is a unitary single-segment.
6. The device of claim 1 , wherein the conductive material includes only one layer.
7. The device of claim 1 , wherein the conductive material couples to the conductive pad from within the conductive pad and terminates at a side of the conductive pad distal to the floor of the cavity.
8. A device, comprising:
a substrate having a first side and an opposite second side,
wherein the substrate is a core substrate including a conductive layer, a first dielectric layer coupled to a first surface of the conductive layer, and a second dielectric layer coupled to an opposite second surface of the conductive layer;
a cavity defined within the substrate, wherein:
the cavity is devoid of the first dielectric layer and the conductive layer, and
a floor of the cavity is defined by the second dielectric layer,
wherein sidewalls of the cavity are defined by coplanar surfaces of the first dielectric layer and the conductive layer;
a die coupled to the floor of the cavity, the die having a conductive pad on a side of the die distal to the floor of the cavity;
a laminate layer coupled to the second side of the substrate, the second dielectric layer sandwiched between the die and the laminate layer;
a hole extending through and defined within the laminate layer, the second dielectric layer, the die, and the conductive pad; and
a conductive material within the hole and extending between and through the laminate layer, the second dielectric layer, the die, and the conductive pad.
9. The device of claim 8 , wherein the hole is continuous through the laminate layer, the second dielectric layer, the die, and the conductive pad.
10. The device of claim 8 , wherein the hole is concentric along a linear axis extending through the laminate layer, the second dielectric layer, the die, and the conductive pad.
11. The device of claim 8 , wherein the hole is a single linear hole along a length of the hole.
12. The device of claim 8 , wherein the conductive material is a unitary single-segment.
13. The device of claim 8 , wherein the conductive material includes only one layer.
14. The device of claim 8 , wherein the device is incorporated into a device selected from a group including at least one of a mobile device, a hand-held personal communication system (PCS) unit, a personal digital assistant, a portable data terminal, a global positioning system (GPS) enabled device, a navigation device, a set top box, a music player, a video player, an entertainment unit, a fixed location terminal, a communications device, a mobile phone, a smartphone, a tablet computer, a computer, a wearable device, an Internet of things (IoT) device, a laptop computer, a server, a router, and an electronic device implemented in an automotive vehicle.
15. A device, comprising:
a substrate having a first side and an opposite second side,
wherein the substrate is a core substrate including a conductive layer, a first dielectric layer coupled to a first surface of the conductive layer, and a second dielectric layer coupled to an opposite second surface of the conductive layer;
a cavity defined within the substrate, wherein:
the cavity is devoid of the first dielectric layer and the conductive layer, and
a floor of the cavity is defined by the second dielectric layer,
wherein sidewalls of the cavity are defined by coplanar surfaces of the first dielectric layer and the conductive layer;
a die coupled to the floor of the cavity, the die having a conductive pad on a side of the die distal to the floor of the cavity; and
means for an interconnect to penetrate the substrate and the die and couple the conductive pad to a node opposite to the conductive pad on the second side of the substrate.
16. The device of claim 15 , wherein the means for the interconnect comprises:
a hole extending through and defined within the second dielectric layer, the die, and the conductive pad; and
a conductive material within the hole and extending between and through the second dielectric layer, the die, and the conductive pad.
17. The device of claim 15 , wherein the means for the interconnect is continuous through the second dielectric layer, the die, and the conductive pad.
18. The device of claim 15 , wherein the means for the interconnect is concentric along a linear axis extending through the second dielectric layer, the die, and the conductive pad.
19. The device of claim 15 , wherein the means for the interconnect includes a single linear hole along a length of the hole.
20. The device of claim 15 , wherein the means for the interconnect includes a conductive material formed as a unitary single-segment that couples to the conductive pad from within the conductive pad and terminates at a side of the conductive pad distal to the floor of the cavity.
21. A method of fabricating an embedded die substrate, comprising:
providing a substrate having a first side and an opposite second side,
wherein the substrate is a core substrate including a conductive layer, a first dielectric layer coupled to a first surface of the conductive layer, and a second dielectric layer coupled to an opposite second surface of the conductive layer;
forming a cavity defined within the substrate, wherein:
the cavity is devoid of the first dielectric layer and the conductive layer, and
a floor of the cavity is defined by the second dielectric layer,
wherein sidewalls of the cavity are defined by coplanar surfaces of the first dielectric layer and the conductive layer;
coupling a die to the floor of the cavity, the die having a conductive pad on a side of the die distal to the floor of the cavity;
drilling a hole extending through and defined within the second dielectric layer, the die, and the conductive pad; and
plating and/or filling the hole with a conductive material extending between and through the second dielectric layer, the die, and the conductive pad, and that couples to the conductive pad from within the hole.
22. The method of claim 21 , wherein the die is coupled to the floor of the cavity before drilling the hole.
23. The method of claim 21 , wherein drilling the hole is performed at one time.
24. The method of claim 21 , wherein the hole is formed to be concentric along a linear axis extending through the second dielectric layer, the die, and the conductive pad.
25. The method of claim 21 , wherein the hole is formed to be a single linear hole along a length of the hole.
26. The method of claim 21 , wherein the conductive material is formed as a unitary single-segment.
27. The method of claim 21 , wherein the conductive material extending between and through the second dielectric layer, the die, and the conductive pad is formed as only one layer.
28. The method of claim 21 , further comprising:
coupling a laminate layer to the second side of the substrate,
wherein, the hole is further drilled to extend through and be defined within the laminate layer, and the conductive material further extends between and through the laminate layer.