Semiconductor devices and methods of manufacturing semiconductor devices
In one example, a semiconductor device comprises a first substrate comprising a first conductive structure, a first body over the first conductive structure and comprising an inner sidewall defining a cavity in the first body, a first interface dielectric over the first body, and a first internal interconnect in the first body and the first interface dielectric, and coupled with the first conductive structure. The semiconductor device further comprises a second substrate over the first substrate and comprising a second interface dielectric, a second body over the second interface dielectric, and a second conductive structure over the second body and comprising a second internal interconnect in the second body and the second interface dielectric. An electronic component is in the cavity, and the second internal interconnect is coupled with the first internal interconnect. Other examples and related methods are also disclosed herein.
1. A semiconductor device, comprising:
a first substrate comprising:
a first dielectric structure; and
a first conductive structure through the first dielectric structure and comprising one or more first conductive redistribution layers;
an electronic component over the first substrate, wherein the electronic component is coupled with the first conductive structure;
a second substrate over the electronic component and comprising:
a second dielectric structure; and
a second conductive structure through the second dielectric structure and comprising one or more second conductive redistribution layers;
a conductive pillar coupled between the first conductive structure and the second conductive structure, wherein the conductive pillar comprises a cylindrical structure;
a body extending between the first substrate and the second substrate, wherein the electronic component and the cylindrical structure of the conductive pillar are in the body; and
an underfill between a top side of the first substrate and a bottom side of the electronic component;
wherein the underfill covers a lateral side of a device interconnect on the bottom side of the electronic component and is over a lateral side of the electronic component; and
wherein a top side of the cylindrical structure of the conductive pillar extends into the second dielectric structure of the second substrate.
2. The semiconductor device of claim 1 , wherein the first substrate comprises a redistribution layer (RDL) substrate, the first dielectric structure comprises a first dielectric layer and a second dielectric layer, and one or more of the first conductive redistribution layers comprises a horizontal trace in the first dielectric layer and a vertical via extending from the horizontal trace into the second dielectric layer.
3. The semiconductor device of claim 1 , wherein the first substrate comprises a pre-formed substrate, and one or more of the first conductive redistribution layers comprises a horizontal trace and a vertical trace extending from the vertical trace.
4. The semiconductor device of claim 1 , wherein the first substrate and the second substrate are coreless.
5. The semiconductor device of claim 1 , wherein the first substrate and the second substrate comprise laminate substrates.
6. The semiconductor device of claim 1 , wherein the body is between a top side of the electronic component and the second substrate.
7. The semiconductor device of claim 1 , comprising an additional electronic component on a bottom side of the first substrate and coupled with the first conductive structure.
8. A method to manufacture a semiconductor device, comprising:
providing a bottom substrate comprising a first dielectric structure, a first conductive structure, and a top interconnect at a first side of the bottom substrate;
providing an electronic component over the bottom substrate, wherein the electronic component is coupled with the first conductive structure;
providing a top substrate over the electronic component, wherein the top substrate comprises a second dielectric structure, a second conductive structure, and a bottom interconnect on a first side of the top substrate, wherein the first side of the top substrate is oriented toward the first side of the bottom substrate;
coupling a first end of a pillar to one of the top interconnect of the bottom substrate or the bottom interconnect of the top substrate;
coupling a second end of the pillar to the other of the top interconnect of the bottom substrate or the bottom interconnect of the top substrate;
providing a body between the bottom substrate and the top substrate and around the electronic component and the pillar; and
singulating through the top substrate, the bottom substrate, and the body;
wherein the body is provided after coupling the pillar, and the body contacts the top substrate and the bottom substrate; and
wherein one of the first end of the pillar or the second end of the pillar extends into the second dielectric structure of the top substrate.
9. The method of claim 8 , comprising:
providing an underfill between the first side of the bottom substrate and the electronic component and covering a lateral side of the electronic component.
10. The method of claim 8 , wherein the bottom substrate comprises a redistribution layer (RDL) substrate, the first dielectric structure comprises a first dielectric layer and a second dielectric layer, and the first conductive structure comprises a horizontal trace in the first dielectric layer and a vertical via extending from the horizontal trace into the second dielectric layer.
11. The method of claim 8 , wherein the bottom substrate comprises a pre-formed substrate, and the first conductive structure comprises a horizontal trace and a vertical trace extending from the vertical trace.
12. The method of claim 8 , wherein the bottom substrate and the top substrate are coreless.
13. The method of claim 8 , wherein the bottom substrate and the top substrate comprise laminate substrates.
14. The method of claim 8 , wherein the body is between a top side of the electronic component and the first side of the top substrate.
15. The method of claim 8 , comprising an additional electronic component on a second side of the bottom substrate and coupled with the first conductive structure.
16. A semiconductor device, comprising:
a first substrate comprising:
a first dielectric structure; and
a first conductive structure through the first dielectric structure and comprising one or more first conductive redistribution layers;
an electronic component over the first substrate, wherein the electronic component is coupled with the first conductive structure;
a second substrate over the electronic component and comprising:
a second dielectric structure; and
a second conductive structure through the second dielectric structure and comprising one or more second conductive redistribution layers;
a conductive pillar coupled to the first conductive structure and the second conductive structure, wherein the conductive pillar comprises a cylindrical structure;
a first insulating body surrounding the conductive pillar;
a second insulating body extending between a lateral side of the first insulating body and a lateral side of the electronic component; and
an underfill between a top side of the first substrate and a bottom side of the electronic component;
wherein the underfill covers a lateral side of a device interconnect on the bottom side of the electronic component and is over a lateral side of the electronic component; and
wherein the cylindrical structure of the conductive pillar extends from a top side of the first substrate to a bottom side of the second substrate.
17. The semiconductor device of claim 16 , comprising:
an interconnecting material electrically coupling the conductive pillar to the second conductive structure.
18. The semiconductor device of claim 16 , wherein the second insulating body extends above a top side of the first insulating body.
19. The semiconductor device of claim 16 , wherein the second insulating body contacts the first substrate and the second substrate.