Solid-state image sensor and method of manufacturing the same
A method of manufacturing a solid-state image sensor, includes forming a first isolation region of a first conductivity type in a semiconductor layer having first and second surfaces, the forming the first isolation region including first implantation for implanting ions into the semiconductor layer through the first surface, forming charge accumulation regions of a second conductivity type in the semiconductor layer, performing first annealing, forming an interconnection on a side of the first surface of the semiconductor layer after the first annealing, and forming a second isolation region of the first conductivity type in the semiconductor layer, the forming the second isolation region including second implantation for implanting ions into the semiconductor layer through the second surface. The first and second isolation regions are arranged between the adjacent charge accumulation regions.
1. A solid-state image sensor which includes a semiconductor layer having a first surface and a second surface, comprising:
charge accumulation region pairs which are arranged between the first surface and the second surface, one of the charge accumulation region pairs including charge accumulation regions to accumulate a charge which is to be transferred to a floating diffusion;
microlenses which are arranged on a side of the second surface so that one of the microlenses is assigned to the one of the charge accumulation region pairs;
a first isolation portion which is arranged between the charge accumulation regions of the one of the charge accumulation region pairs, the first isolation portion including a first isolation region extending from the second surface toward the first surface; and
a second isolation portion which is arranged between the charge accumulation region pairs, the second isolation portion including a second isolation region extending from the second surface toward the first surface, wherein a depth, from the second surface, of the first isolation region is smaller than a depth, from the second surface, of the second isolation region.
2. The sensor according to claim 1 , wherein the first isolation portion is formed by a first number of isolation regions one of which is the first isolation region, and the second isolation portion is formed by a second number of isolation regions one of which is the second region, the first number being smaller than the second number.
3. The sensor according to claim 1 , wherein an impurity concentration of the first isolation portion is lower than an impurity concentration of the second isolation portion.
4. The sensor according to claim 1 , further comprising transfer gates which are arranged on a side of the first surface so that the transfer gates respectively transfer the charges in the charge accumulation regions.
5. The sensor according to claim 1 , wherein the second isolation portion further includes an isolation region extending from the first surface so as to contact the second isolation region.
6. The sensor according to claim 1 , wherein the first isolation portion further includes a third isolation region extending from the first surface, and the second isolation portion further includes a fourth isolation region extending from the first surface, and
wherein a depth, from the first surface, of the third isolation region is the same as a depth, from the first surface, of the fourth isolation region.
7. The sensor according to claim 6 , wherein the third isolation portion is arranged apart from the first isolation portion.
8. The sensor according to claim 6 , wherein a width of the second isolation region is larger on a side of the second surface than on a side of the first surface, and a width of the fourth isolation region is larger on a side of the second surface than on a side of the first surface.
9. The sensor according to claim 8 , wherein a width of the first isolation region is larger on a side of the second surface than on a side of the first surface, and a width of the third isolation region is larger on a side of the second surface than on a side of the first surface.
10. A camera comprising:
a solid-state image sensor according to claim 1 ; and
a processing unit which processes a signal output from the solid-state image sensor,
wherein by using the signal, the camera performs a focus detection by a phase-difference detection method.
11. A solid-state image sensor which includes a semiconductor layer having a first surface and a second surface, comprising:
charge accumulation region pairs which are arranged between the first surface and the second surface, one of the charge accumulation region pairs including charge accumulation regions to accumulate a charge which is to be transferred to a floating diffusion;
microlenses which are arranged on a side of the second surface so that one of the microlenses is assigned to the one of the charge accumulation region pairs;
a first isolation portion which is arranged between the charge accumulation regions of the one of the charge accumulation region pairs, the first isolation portion including a first isolation region extending from the second surface toward the first surface; and
a second isolation portion which is arranged between the charge accumulation region pairs, the second isolation portion including a second isolation region extending from the second surface toward the first surface, wherein a length, from the second surface, of the first isolation region is smaller than a length, from the second surface, of the second isolation region.
12. The sensor according to claim 11 , wherein the first isolation portion is formed by a first number of isolation regions one of which is the first isolation region, and the second isolation portion is formed by a second number of isolation regions one of which is the second region, the first number being smaller than the second number.
13. The sensor according to claim 11 , wherein an impurity concentration of the first isolation portion is lower than an impurity concentration of the second isolation portion.
14. The sensor according to claim 11 , further comprising transfer gates which are arranged on a side of the first surface so that the transfer gates respectively transfer the charges in the charge accumulation regions.
15. The sensor according to claim 11 , wherein the second isolation portion further includes an isolation region extending from the first surface so as to contact the second isolation region.
16. The sensor according to claim 11 , wherein the first isolation portion further includes a third isolation region extending from the first surface, and the second isolation portion further includes a fourth isolation region extending from the first surface, and
wherein a length, from the first surface, of the third isolation region is the same as a length, from the first surface, of the fourth isolation region.
17. The sensor according to claim 16 , wherein the third isolation portion is arranged apart from the first isolation portion.
18. The sensor according to claim 16 , wherein a width of the second isolation region is larger on a side of the second surface than on a side of the first surface, and a width of the fourth isolation region is larger on a side of the second surface than on a side of the first surface.
19. The sensor according to claim 18 , wherein a width of the first isolation region is larger on a side of the second surface than on a side of the first surface, and a width of the third isolation region is larger on a side of the second surface than on a side of the first surface.
20. A camera comprising:
a solid-state image sensor according to claim 11 ; and
a processing unit which processes a signal output from the solid-state image sensor,
wherein by using the signal, the camera performs a focus detection by a phase-difference detection method.
21. The sensor according to claim 1 , further comprising a floating diffusion region configured to be input with the charge from the charge accumulation regions of the one of the charge accumulation region pairs,
wherein the floating diffusion region is arranged between the charge accumulation regions of the one of the charge accumulation region pairs and the second isolation portion.
22. The sensor according to claim 11 , further comprising a floating diffusion region configured to be input with the charge from the charge accumulation regions of the one of the charge accumulation region pairs,
wherein the floating diffusion region is arranged between the charge accumulation regions of the one of the charge accumulation region pairs and the second isolation portion.