Method for manufacturing horizontal-gate-all-around devices with different number of nanowires
A method includes the following operations: (i) receiving a FET precursor including a first fin and a second fin, each of the first fin and the second fin having nanowire channels and sacrificial layers; (ii) forming a dummy gate traversing the first and second fins, thereby defining channel regions of the first and second fins under the dummy gate; (iii) forming source/drain features from exposed portions of the first and second fins; (iv) removing the dummy gate to expose the channel regions of the first and second fins; and (v) suspending the nanowire channels of the first and second fins by removing portions of the sacrificial layers of the first and second fins.
1. A method, comprising:
receiving a precursor substrate, the precursor substrate comprising a first fin, a plurality of second fins, and an isolation structure, the first and second fins being embedded in the isolation structure, wherein the second fins are adjacent to each other;
recessing the first and second fins to respectively form a first recess and a plurality of second recesses, wherein the first and second fins are concurrently etched and the second fins are configured to cause a loading effect on the etching such that a depth of each second recess is less than a depth of the first recess;
forming a first composite fin and a plurality of second composite fins respectively in the first recess and the second recesses, wherein the first composite fin comprises a first number of first composite layers, the second composite fin comprises a second number of second composite layers, each of the first and second composite layers comprises a sacrificial layer and a nanowire channel stacked thereon, and the first number is greater than the second number;
recessing the isolation structure to expose sides of the first and second composite fins;
forming a dummy gate traversing the first and second composite fins, thereby defining channel regions of the first and second composite fins under the dummy gate;
forming source/drain features from exposed portions of the first and second composite fins;
forming a dielectric layer covering the source/drain features;
removing dummy gate to expose the channel regions of the first and second composite fins;
removing portions of the sacrificial layers of the first and second composite fins in the channel regions.
2. The method according to claim 1 , wherein forming the first composite fin and the second composite fin comprises:
alternately epitaxially growing a plurality of Si x Ge (1-x) layers and a plurality of Si y Ge (1-y) layers from the recessed first and second fins in the first and second recesses, wherein x and y are numbers between 0 and 1, and x is different from y; and
applying chemical-mechanical polishing process to remove excess portions of the Si x Ge (1-x) layers and Si y Ge (1-y) layers on the isolation structure.
3. The method according to claim 1 , further comprising removing a recessed first fin and recessed second fins, after removing the portions of the sacrificial layers of the first and second composite fins in the channel regions.
4. The method according to claim 3 , further comprising forming a metal gate wrapping the nanowire channels after removing the recessed first fin and the recessed second fins.