Mark forming method and device manufacturing method
A mark forming method includes: a step of forming, on a device layer of a wafer, an intermediate layer to which a polymer layer containing a block copolymer is adherable, the device layer including a shot area and a scribe line area; a step of removing a portion, of the intermediate layer, formed in the scribe line area; a step of exposing an image of a mark on the scribe line area and forming, based on the image of the mark, a mark including recessed portion; and a step of applying the polymer layer containing the block copolymer on the device layer of the wafer. When a circuit pattern is formed by using the self-assembly of the block copolymer, it is possible to form the mark simultaneously with the formation of the circuit pattern.
1. A mark forming method comprising:
forming, on a substrate, a plurality of first patterns and a plurality of second patterns; applying a block copolymer on the substrate after the plurality of first patterns and the plurality of second patterns have been formed;
applying a self-assembly treatment to the block copolymer applied on the substrate;
forming a first mark having a first shape between adjacent patterns of the plurality of first patterns after the self-assembly treatment has been applied to the block copolymer; and
forming a second mark having a second shape different from the first shape between adjacent patterns of the plurality of second patterns after the self-assembly treatment has been applied to the block copolymer.
2. The mark forming method according to claim 1 , wherein the block-copolymer is applied between two patterns of the plurality of first patterns and two patterns of the plurality of second patterns.
3. The mark forming method according to claim 1 , wherein a first recess is formed between two patterns of the plurality of first patterns and a second recess is formed between two patterns of the plurality of second patterns, and the block-copolymer is applied to the first and second recesses.
4. The mark forming method according to claim 1 , wherein the plurality of first patterns and the plurality of second patterns are planer pre-patterns.
5. The mark forming method according to claim 1 , wherein the first and second marks are formed by using a part of the block-copolymer remained without being removed.
6. The mark forming method according to claim 1 , wherein the first and second marks are formed in a scribe line of the substrate.
7. The mark forming method according to claim 1 , wherein a periodic direction of the plurality of first patterns and a periodic direction of the plurality of second patterns are different from each other.
8. The mark forming method according to claim 7 , wherein the periodic direction of the plurality of first patterns and the periodic direction of the plurality of second patterns are orthogonal to each other.
9. A mark forming method comprising:
forming, on a substrate, a plurality of first patterns and a plurality of second patterns;
applying a block copolymer on the substrate after the plurality of first patterns and the plurality of second patterns have been formed;
applying an annealing to the block copolymer applied on the substrate;
forming a first mark having a first shape between adjacent patterns of the plurality of first patterns after the annealing has been applied to the block copolymer; and
forming a second mark having a second shape different from the first shape between adjacent patterns of the plurality of second patterns after the annealing has been applied to the block copolymer.
10. A device manufacturing method comprising:
forming an alignment mark on a substrate by using the mark forming method as defined in claim 1 ; and
performing an alignment by using the alignment mark, and then, exposing the substrate.
11. The mark forming method according to claim 9 , wherein the block-copolymer is applied between two patterns of the plurality of first patterns and two patterns of the plurality of second patterns.
12. The mark forming method according to claim 9 , wherein a first recess is formed between two patterns of the plurality of first patterns and a second recess is formed between two patterns of the plurality of second patterns, and the block-copolymer is applied to the first and second recesses.
13. The mark forming method according to claim 9 , wherein the plurality of first patterns and the plurality of second patterns are planer pre-patterns.
14. The mark forming method according to claim 9 , wherein the first and second marks are formed in a scribe line of the substrate.
15. The mark forming method according to claim 9 , wherein a periodic direction of the plurality of first patterns and a periodic direction of the plurality of second patterns are different from each other.
16. The mark forming method according to claim 15 , wherein the periodic direction of the plurality of first patterns and the periodic direction of the plurality of second patterns are orthogonal to each other.
17. A device manufacturing method comprising:
forming an alignment mark on a substrate by using the mark forming method as defined in claim 9 ; and
performing an alignment by using the alignment mark, and then, exposing the substrate.