Multi-frequency power modulation for etching high aspect ratio features
A method of etching a substrate is described. The method includes disposing a substrate having a surface exposing a first material and a second material in a processing space of a plasma processing system, and performing a modulated plasma etching process to selectively remove the first material at a rate greater than removing the second material. The modulated plasma etching process includes a power modulation cycle composed of applying a first power modulation sequence to the plasma processing system, and applying a second power modulation sequence to the plasma processing system, the second power modulation sequence being different than the first power modulation sequence.
1. A method of etching, comprising:
disposing a substrate having a surface exposing a first material and a second material in a processing space of a plasma processing system;
performing a modulated plasma etching process to selectively remove the first material at a rate greater than removing the second material, the modulated plasma etching process comprising a power modulation cycle that includes:
applying a first power modulation sequence to the plasma processing system, and
applying a second power modulation sequence to the plasma processing system, the second power modulation sequence being different than the first power modulation sequence; and
repeating the power modulation cycle at a power modulation frequency for a determined modulation time period,
wherein the first power modulation sequence includes repeating a first sub-power modulation cycle at a first sub-power modulation frequency, the first sub-power modulation cycle including:
applying a radio frequency (RF) signal to the plasma processing system at a first power level, and
applying the RF signal to the plasma processing system at a second power level, wherein the first and second power levels differ in value from one another;
wherein a time period of the second power modulation sequence is greater than a time period of the first sub-power modulation cycle.
2. The method of claim 1 , wherein the power modulation frequency is less than 1 kHz.
3. The method of claim 2 , wherein the first sub-power modulation frequency is greater than or equal to 1 kHz.
4. The method of claim 1 , wherein the first power level exceeds the second power level, and the step of applying the RF signal at the first power level occurs before the step of applying the RF signal at the second power level.
5. The method of claim 4 , wherein the second power level is a power off state.
6. The method of claim 1 , wherein the first sub-power modulation cycle further includes:
applying the RF signal to the plasma processing system at an intermediate power level, wherein the intermediate power level resides at a value between the first and second power levels.
7. The method of claim 6 , wherein the first power level exceeds the second power level, and the step of applying the RF signal at the first power level occurs before the step of applying the RF signal at the second power level.
8. The method of claim 7 , wherein the second power level is a power off state.
9. The method of claim 1 , wherein the applying the RF signal at the first power level ranges from 10% to 90% of the time period of the first sub-power modulation cycle.
10. The method of claim 1 , wherein the second power modulation sequence consists of a power off state.
11. The method of claim 1 , wherein the second power modulation sequence consists of applying the RF signal at a constant power level.
12. The method of claim 1 , wherein the second power modulation sequence includes repeating a second sub-power modulation cycle at a second sub-power modulation frequency, the second sub-power modulation cycle including:
applying the radio frequency (RF) signal to the plasma processing system at a third power level, and
applying the RF signal to the plasma processing system at a fourth power level, wherein the third and fourth power levels differ in value from one another.
13. The method of claim 12 , wherein the second sub-power modulation frequency is greater than or equal to 1 kHz.
14. The method of claim 12 , wherein the third power level exceeds the fourth power level.
15. The method of claim 14 , wherein the fourth power level is a power off state.
16. The method of claim 1 , wherein performing the power modulation cycle includes:
generating a signal waveform to execute the first and second power modulation sequences; and
amplifying the RF signal according to the generated signal waveform.
17. The method of claim 1 , wherein the RF signal is applied to a substrate holder upon which the substrate is positioned.
18. The method of claim 17 , wherein the substrate holder positions the substrate facing an RF powered electrode.
19. The method of claim 17 , wherein the substrate holder positions the substrate facing a slotted plane antenna.
20. The method of claim 19 , wherein power at a microwave frequency is coupled to the slotted plane antenna.