Co-integration of tensile silicon and compressive silicon germanium
Integrated circuits are disclosed in which the strain properties of adjacent pFETs and nFETs are independently adjustable. The pFETs include compressive-strained SiGe on a silicon substrate, while the nFETs include tensile-strained silicon on a strain-relaxed SiGe substrate. Adjacent n-type and p-type FinFETs are separated by electrically insulating regions formed by a damascene process. During formation of the insulating regions, the SiGe substrate supporting the n-type devices is permitted to relax elastically, thereby limiting defect formation in the crystal lattice of the SiGe substrate.
1. A device, comprising:
a substrate having a first surface and a second surface opposite the first surface, the substrate including a first material;
a strain-relaxed region on a third surface of the substrate, the third surface being between the first and the second surfaces, the strain-relaxed region including a second material that is different from the first material;
a plurality of first fins on the strain-relaxed region; and
a plurality of first inter-fin insulating regions extending into the strain-relaxed region between adjacent ones of the first fins.
2. The device of claim 1 wherein the first fins are tensile-strained fins including the first material.
3. The device of claim 1 , further comprising a first gate structure on the plurality of first fins, the first gate structure contacting at least three sides of each of the first fins.
4. The device of claim 3 wherein the first gate structure contacts the first inter-fin insulating regions between the adjacent ones of the first fins.
5. The device of claim 4 wherein the first fins are spaced apart from one another along a first direction, and the first gate structure extends between the adjacent ones of the first fins along the first direction.
6. The device of claim 5 , further comprising:
a first insulating region between a first sidewall of the strain-relaxed region and the substrate; and
a second insulating region between a second sidewall of the strain-relaxed region and the substrate, the second sidewall being spaced apart from the first sidewall along the first direction.
7. The device of claim 6 , further comprising:
a third insulating region between a third sidewall of the strain-relaxed region and the substrate; and
a fourth insulating region between a fourth sidewall of the strain-relaxed region and the substrate, the fourth sidewall being spaced apart from the third sidewall along a second direction that is transverse to the first direction.
8. The device of claim 7 wherein each of the first fins extends across a surface of the strain-relaxed region along the second direction.
9. The device of claim 7 wherein each of the first, second, third, and fourth insulating regions extends from a level that is co-planar with the first surface of the substrate to a level that is between the second surface and the third surface of the substrate.
10. The device of claim 7 , further comprising:
a plurality of second fins on the first surface of substrate, the second fins including the second material.
11. The device of claim 10 , further comprising:
a plurality of second inter-fin insulating regions extending into the substrate between adjacent ones of the second fins.
12. The device of claim 11 wherein the plurality of second fins includes:
a first portion of the second fins that are spaced apart from the plurality of first fins along the second direction by the third insulating region; and
a second portion of the second fins that are spaced apart from the plurality of first fins along the second direction by the fourth insulating region.
13. The device of claim 12 , further comprising:
a second gate structure on the first portion of the second fins, the second gate structure contacting at least three sides of each of the second fins of the first portion; and
a third gate structure on the second portion of the second fins, the third gate structure contacting at least three sides of each of the second fins of the second portion.
14. The device of claim 13 wherein the second gate structure contacts the second inter-fin insulating regions between the adjacent ones of the first portion of the second fins, and the third gate structure contacts the second inter-fin insulating regions between the second portion of the second fins.
15. The device of claim 1 wherein the first material is silicon and the second material is germanium.
16. The device of claim 15 wherein the plurality of first fins includes silicon and germanium.
17. A device, comprising:
a substrate having a first surface and a second surface opposite the first surface, the substrate including a first material;
a strain-relaxed region on a third surface of the substrate, the third surface being between the first and the second surfaces, the strain-relaxed region including a second material that is different from the first material;
an insulating material surrounding side surfaces of the strain-relaxed region and extending between the substrate and the side surfaces of the strain-relaxed region;
a plurality of first fins on the strain-relaxed region, the first fins including the first material;
a plurality of second fins on the first surface of the substrate, the second fins including the second material.
18. The device of claim 17 wherein each of the plurality of first fins is a tensile-strained fin, and each of the plurality of second fins is a compressive-strained fin.
19. The device of claim 17 , further comprising:
a plurality of first inter-fin insulating regions extending into the strain-relaxed region between adjacent ones of the first fins; and
a plurality of second inter-fin insulating regions extending into the substrate between adjacent ones of the second fins.
20. The device of claim 19 , further comprising:
a gate structure on the plurality of first fins and the plurality of second fins, the gate structure contacting at least three sides of each of the first fins and the second fins.
21. The device of claim 20 wherein the gate structure contacts each of the plurality of first inter-fin insulating regions and each of the plurality of second inter-fin insulating regions.
22. A method, comprising:
forming a strain-relaxed region on a first surface of a substrate, the first surface being between a second surface and a third surface that is opposite the second surface, the substrate including a first material, the strain-relaxed region including a second material that is different from the first material;
forming a plurality of first fins on the strain-relaxed region, the first fins including the first material; and
forming a plurality of first inter-fin insulating regions extending into the strain-relaxed region between adjacent ones of the first fins.
23. The method of claim 22 , further comprising:
forming a first gate structure on the plurality of first fins, the first gate structure contacting at least three sides of each of the first fins.
24. The method of claim 23 , further comprising:
forming an insulating region surrounding side surfaces of the strain-relaxed region and extending between the substrate and the side surfaces of the strain-relaxed region.
25. The method of claim 24 , further comprising:
forming a plurality of second fins on the second surface of the substrate, the second fins including the second material.