Routing design of dummy metal cap and redistribution line

1. A method comprising:

attaching a device die to a first dielectric layer;

forming an active through-via and a dummy through-via over the first dielectric layer;

encapsulating the device die, the active through-via, and the dummy through-via in an encapsulating material;

forming a second dielectric layer over the encapsulating material; and

forming an active metal cap, a redistribution line, and a dummy metal cap in a common process, wherein the active metal cap and the dummy metal cap overlap the active through-via and the dummy through-via, respectively, and the dummy metal cap is separated into a first portion and a second portion by the redistribution line, wherein the first portion and the second portion of the dummy metal cap and the redistribution line are at a same level.

2. The method of claim 1 , wherein the first portion and the second portion of the dummy metal cap are separated from the redistribution line by a first gap and a second gap, respectively, and the method further comprises forming a third dielectric layer filling into the first gap and the second gap, and the third dielectric layer comprises:

first portions covering the first portion and the second portion of the dummy metal cap; and

second portions extending into the first gap and the second gap.

3. The method of claim 1 , wherein the first portion and the second portion of the dummy metal cap are formed in a common process.

4. The method of claim 2 further comprising forming a plurality of conductive features extending into the third dielectric layer, wherein a metal bridge in the plurality of conductive features interconnects the first portion and the second portion of the dummy metal cap, and the metal bridge is electrically floating.

5. The method of claim 1 further comprising, in the common process, forming a via connecting the first portion of the dummy metal cap to the dummy through-via, wherein the via is in the second dielectric layer, and no via in the second dielectric layer is connected to the second portion of the dummy metal cap.

6. The method of claim 1 further comprising forming an additional dummy metal cap, with a first portion of the additional dummy metal cap resistively coupling to the dummy through-via, wherein the dummy metal cap and the additional dummy metal cap are on opposite sides of the encapsulating material.

7. The method of claim 6 , wherein the dummy through-via has a circular profile, and the additional dummy metal cap further comprises a second portion separated from the first portion.

8. The method of claim 7 , wherein the second portion of the additional dummy metal cap is electrically floating, and is electrically and physically disconnected from the first portion.

9. A method comprising:

encapsulating a dummy through-via in an encapsulating material;

forming a dummy metal cap overlapping the dummy through-via, wherein the dummy metal cap has a circular outer contour in a top view of the dummy metal cap, and wherein the dummy metal cap comprises:

a first portion; and

a second portion separated from the first portion by a gap; and

forming a redistribution line in the gap, wherein the redistribution line is electrically decoupled from the dummy metal cap.

10. The method of claim 9 , wherein the redistribution line and the dummy through-via are formed through a common plating process.

11. The method of claim 9 further comprising:

forming an active through-via; and

forming an active metal cap overlapping and electrically connecting to the active through-via, wherein the dummy metal cap and the active metal cap are formed in a common process.

12. The method of claim 9 , wherein the first portion is electrically floating, and is electrically connected to the dummy through-via.

13. The method of claim 12 , wherein the second portion is electrically floating, and is electrically connected to the first portion.

14. The method of claim 12 , wherein the second portion is electrically floating, and is electrically disconnected from the first portion.

15. The method of claim 9 , wherein the encapsulating the dummy through-via in the encapsulating material comprises:

dispensing a molding compound to embed the dummy through-via therein; and

performing a planarization to reveal the dummy through-via.

16. A method comprising: encapsulating a dummy through-via in an encapsulating material; forming a dielectric layer overlying the dummy through-via and the encapsulating material; forming an opening in the dielectric layer to reveal the dummy through-via; forming a dummy metal cap overlapping the dummy through-via, wherein the dummy metal cap comprises: a first portion resistively coupling to the dummy through-via; and a second portion separated from the first portion by a gap; and forming a second dielectric layer, wherein the second dielectric layer comprises: first portions comprising bottom surfaces physically contacting top surfaces of both the first portion and the second portion of the dummy metal cap; and a second portion extending into the gap.

17. The method of claim 16 , herein the dummy metal cap has a circular outer contour, with a sidewall of the first portion and a sidewall of the second portion fitting a same circle.

18. The method of claim 16 further comprising:

forming a conductive line in the gap, wherein the conductive line is electrically decoupled from both the first portion and the second portion, and the second dielectric layer further comprises a third portion having a bottom surface physically contacting a top surface of the conductive line.

19. The method of claim 16 further comprising electrically connecting the first portion to the second portion.

20. The method of claim 16 further comprising performing a die-saw, with the encapsulating material being sawed through, wherein at a time the encapsulating material is sawed, the dummy metal cap is electrically floating.