Dry and wet etch resistance for atomic layer deposited TiO2 for SIT spacer application
Embodiments describing an approach for creating an etch resistant Titanium Oxide film for sidewall image transfer (SIT) spacer application. Generating a mandrel formation, and depositing a Titanium Oxide spacer on the mandrel formation, wherein depositing the Titanium Oxide spacer further comprises at least one of exposing the Titanium Oxide spacer to at least 100 C or plasma conditions of RF power are at least 500 W for at least 1 second.
1. A method for creating an etch resistant Titanium Oxide film for sidewall image transfer (SIT) spacer application, the method comprising:
generating a mandrel formation;
depositing a Titanium Oxide spacer on the mandrel formation, wherein depositing the Titanium Oxide spacer further comprises at least one of exposing the Titanium Oxide spacer to at least 100 C and plasma conditions of RF power of least 500 W for at least 1 second; and
generating a Titanium Oxide film, wherein the Titanium Oxide film comprises: Titanium Oxide density of at least 5 g/cm3, a hardness of at least 10 GPa, and a Titanium percentage of at least 30%.
2. The method of claim 1 further comprising:
annealing a Titanium Oxide spacer.
3. The method of claim 1 , wherein depositing the Titanium Oxide spacer comprises depositing the Titanium Oxide conformally using at least one of ALD or PEALD.
4. The method of claim 3 , wherein the PEALD comprises plasma conditions, and wherein the plasma conditions comprise an RF power between 500 W and 1000 W.
5. The method of claim 1 , wherein the Titanium Oxide film characteristics further comprises an increased Ti—O bonding.
6. The method of claim 1 , further comprising:
applying a post processing anneal, wherein the post processing anneal comprises exposing the Titanium Oxide spacer to an oxide plasma anneal post deposition at low RF conditions of at least 500 W.
7. The method of claim 6 , wherein the oxygen plasma anneal comprises at least one of Oxygen flow or high thermal anneal of no more than 300 C.
8. A system for creating an etch resistant Titanium Oxide film for sidewall image transfer (SIT) spacer application, the system comprising instructions to:
generate a mandrel formation; and
deposit a Titanium Oxide spacer on the mandrel formation, wherein depositing the Titanium Oxide spacer further comprises at least one of exposing the Titanium Oxide spacer to at least 100 C or plasma conditions of RF power are at least 500 W for at least 1 second and
generate a Titanium Oxide film, wherein the Titanium Oxide film comprises: Titanium Oxide density of at least 5 g/cm3, a hardness of at least 10 GPa, and a Titanium percentage of at least 30%.
9. The system of claim 8 , further comprising:
anneal a Titanium Oxide spacer.
10. The system of claim 8 , wherein depositing the Titanium Oxide spacer comprises depositing the Titanium Oxide conformally using at least one of ALD or PEALD.
11. The system of claim 10 , wherein the PEALD comprises plasma conditions, and wherein the plasma conditions comprise an RF power between 500 W and 1000 W.
12. The system of claim 8 , wherein the Titanium Oxide film characteristics further comprises an increased Ti—O bonding.
13. The system of claim 8 , further comprising:
applying a post processing anneal, wherein the post processing anneal comprises exposing the Titanium Oxide spacer to an oxide plasma anneal post deposition at low RF conditions of at least 500 W.
14. The system of claim 13 , wherein the oxygen plasma anneal comprises at least one of Oxygen flow or high thermal anneal of no more than 300 C.
15. A method for creating an etch resistant Titanium Oxide film for sidewall image transfer (SIT) spacer application, the method comprising:
generating a mandrel formation;
annealing the Titanium Oxide spacer;
applying post anneal processing comprising low RF conditions ranging from 0.5 to less than 500 W; and
generating a Titanium Oxide film, wherein the Titanium Oxide film comprises film characteristics of at least one of Titanium Oxide density of at least 5 g/cm3, a hardness of at least 10 GPa, a Titanium percentage of at least 30%, or increased Ti—O bonding.
16. The method of claim 15 , where in annealing the Titanium Oxide Spacer further comprises:
depositing the titanium oxide spacer, wherein depositing the Titanium Oxide spacer further comprises exposing the Titanium Oxide spacer to at least 100 C and plasma conditions of RF power are at least 500 W for at least 1 second.
17. The method of claim 16 , wherein depositing the Titanium Oxide spacer comprises depositing Titanium Oxide conformally using at least one of ALD or Plasma assisted ALD.
18. The method of claim 17 , wherein the PEALD comprises plasma conditions, and wherein the plasma conditions comprise an RF power between 500 W and 1000 W.
19. The method of claim 15 , wherein the post anneal processing further comprises: oxygen plasma anneal comprising at least one of Oxygen flow or high thermal anneal of no more than 300 C.