Electronic component and method of manufacturing the same

1. An electronic component, comprising:

a semiconductor layer having a first surface in contact with a surface of a first insulating layer and having a second surface in contact with a surface of a second insulating layer, said semiconductor layer including integrated circuits at the second surface;

an insulating portion within the semiconductor layer extending from the first surface to the second surface;

an opening extending through the second insulating layer and a central portion of the insulating portion in the semiconductor layer which leaves in place an insulating cladding on lateral walls of the opening;

a conductive pin within the opening that is laterally insulated by the insulating cladding;

an interconnection structure over the second insulating layer that comprises a conductive layer portion in contact with a first end of the conductive pin;

a cavity extending only partially through the first insulating layer to a second end of the conductive pin which passes only partially through the first insulating layer; and

a contact pad in the cavity connected to the second end of the conductive pin.

2. The electronic component of claim 1 , wherein the conductive layer portion belongs to a metallization level of the interconnection structure closest to the second surface.

3. The electronic component of claim 1 , wherein a polished surface is coplanar with a surface of the second insulating layer and the first end of the conductive pin.

4. The electronic component of claim 3 , further comprising a diffusion barrier layer within the opening between the conductive pin and the insulating cladding.

5. An electronic component, comprising:

a photosensitive region in a semiconductor substrate layer having a front surface and a back surface;

a region of insulating material extending from the front surface to the back surface;

a first insulating layer on the front surface;

a second insulating layer on the back surface;

an electrical contact extending through the first insulating layer to make electrical connection to the photosensitive region in the semiconductor substrate layer, said electrical contact made of a first conductive material;

an opening extending through the first insulating layer and further extending through the region of insulating material to reach at least to said second insulating layer, said opening leaving a portion of the region of insulating material in place at a peripheral sidewall of said opening to insulate the opening from the semiconductor substrate layer;

a second conductive material completely filling the opening to form an electrical block, wherein the second conductive material is different from the first conductive material;

a first interconnect over the first insulating layer, said first interconnect comprising a first metal layer having a bottom surface in direct contact with a top surface of the electrical block and a first metal via extending from a top surface of the first metal layer;

a second interconnect over the first insulating layer, said second interconnect comprising a second metal layer having a bottom surface in direct contact with a top surface of the electrical contact and a second metal via extending from a top surface of the second metal layer;

an aperture extending through the second insulating layer to reach the electrical block; and

an electrically conducting material filling the aperture to form a connection pad.

6. The electronic component of claim 5 , wherein the first conductive material is tungsten and the second conductive material is copper.

7. The electronic component of claim 5 , wherein the first and second metal layers are coplanar.