Forming vertical transport field effect transistors with uniform bottom spacer thickness
A method of forming a vertical transport field effect transistors with uniform bottom spacer thickness, including, forming a plurality of vertical fins on a substrate, forming a protective liner layer on the plurality of vertical fins, forming a sacrificial liner on the protective liner layer, forming a spacer liner on a portion of the sacrificial liner, wherein at least a top surface of the sacrificial liner on each of the vertical fins is exposed, converting the exposed portion of the sacrificial liner on each of the vertical fins to a conversion cap, and removing the conversion cap from each of the vertical fins to expose an upper portion of each vertical fin.
1. A vertical transport field effect transistor with uniform bottom spacer thickness, comprising:
a vertical fin on a substrate;
a protective liner segment on the substrate adjacent to the vertical fin;
a conversion segment on the protective liner segment, wherein the conversion segment includes silicon oxide (SiO); and
a gate dielectric layer on the conversion segment, wherein the gate dielectric layer follows the shape and varying thickness of the conversion segment.
2. The vertical transport field effect transistor of claim 1 , wherein the protective liner segment is silicon nitride (SiN).
3. The vertical transport field effect transistor of claim 1 , wherein the protective liner segment has a thickness in a range of about 2 nm to about 5 nm.
4. The vertical transport field effect transistor of claim 1 , further comprising a top source/drain on the vertical fin.
5. The vertical transport field effect transistor of claim 1 , further comprising a work function layer on the gate dielectric layer and a gate fill layer on the work function layer.
6. The vertical transport field effect transistor of claim 5 , wherein the protective liner segment covers a lower portion of the vertical fin.
7. The vertical transport field effect transistor of claim 6 , wherein the conversion segment and protective liner segment forms a bottom spacer on the substrate.
8. A vertical transport field effect transistor with uniform bottom spacer thickness, comprising:
a plurality of vertical fins on a substrate;
a plurality of protective liner segments on the substrate;
a conversion segment on each of the plurality of protective liner segments, wherein the conversion segment includes silicon oxide (SiO);
a gate dielectric layer on each of the conversion segments, wherein the gate dielectric layer follows the shape and varying thickness of the conversion segment; and
a top source/drain on each of the plurality of vertical fins.
9. The vertical transport field effect transistor of claim 8 , wherein the plurality of protective liner segments are silicon nitride (SiN).
10. The vertical transport field effect transistor of claim 8 , wherein the plurality of protective liner segments have a thickness in the range of about 2 nm to about 5 nm.
11. The vertical transport field effect transistor of claim 8 , wherein the top source/drain is a merged top source/drain that spans the plurality of vertical fins.
12. The vertical transport field effect transistor of claim 8 , wherein the plurality of conversion segments each covers one of the protective liner segments on a sidewall of at least one of the plurality of vertical fins to a height in a range of about 2 nm to about 7 nm.
13. A vertical transport field effect transistor with uniform bottom spacer thickness, comprising:
a plurality of vertical fins on a substrate;
a plurality of protective liner segments on the substrate;
a conversion segment on each of the plurality of protective liner segments, wherein the plurality of conversion segments each covers one of the protective liner segments on a sidewall of at least one of the plurality of vertical fins to a predetermined height, and wherein the conversion segment includes silicon oxide (SiO);
a gate dielectric layer on the conversion segments, wherein the gate dielectric layer follows the shape and varying thickness of the conversion segment; and
a top source/drain on each of the plurality of vertical fins.
14. The vertical transport field effect transistor of claim 13 , wherein the plurality of conversion segments each covers one of the protective liner segments on a sidewall of at least one of the plurality of vertical fins to a height in a range of about 2 nm to about 7 nm.
15. The vertical transport field effect transistor of claim 14 , wherein the plurality of protective liner segments have a thickness in the range of about 2 nm to about 5 nm.
16. The vertical transport field effect transistor of claim 15 , wherein each of the conversion segments on the protective liner segments forms a bottom spacer on the substrate.
17. The vertical transport field effect transistor of claim 16 , further comprising a work function layer on the gate dielectric layer and a gate fill layer on the work function layer.