Method of forming an integrated resonator with a mass bias
A method of forming an integrated resonator apparatus includes depositing alternating dielectric layers of lower and higher acoustic impedance materials over a substrate. First and second resonator electrodes are formed over the alternating dielectric layers, with a piezoelectric layer located between the first and second resonator electrodes. A mass bias is formed over the first and second resonator electrodes. The mass bias, first and second electrodes, piezoelectric layer, and alternating dielectric layers may be encapsulated with a plastic mold fill.
1. A method of forming a piezoelectric resonator with an acoustic Bragg reflector, comprising:
depositing alternating dielectric layers of lower and higher acoustic impedance materials over a substrate;
depositing a first resonator electrode over the alternating dielectric layers; depositing a piezoelectric layer over the first resonator electrode; depositing a second resonator electrode over the piezoelectric layer;
depositing a mass bias over first and second resonator electrodes such that the mass bias is electrically insulated from the first and second resonator electrodes; and
depositing first and second contact pads concurrently with depositing the mass bias and of a same material as the mass bias, the first contact pad making electrical contact to the first electrode and the second contact pad making electrical contact with the second electrode.
2. The method of claim 1 , wherein the alternating dielectric layers are a first set of alternating dielectric layers, and further comprising depositing a second set of alternating dielectric layers of lower and higher acoustic impedance materials between the second resonator electrode and the mass bias.
3. The method of claim 2 wherein a top-most layer of the first set of alternating dielectric layers is a first layer of lower acoustic impedance material, and a bottom-most layer of the second set of alternating dielectric layers is a second layer of lower acoustic impedance material.
4. The method of claim 2 , further comprising forming an overcoat layer between the second set of alternating dielectric layers and the mass bias.
5. The method of claim 2 , further comprising forming an active heater layer between the second set of alternating layers and the mass bias.
6. The method of claim 1 wherein the mass bias comprises aluminum copper.
7. The method of claim 1 wherein the mass bias is approximately 1 micron thick.
8. The method of claim 1 wherein depositing the alternating dielectric layers comprises first depositing a first layer with a given acoustic impedance, then depositing a second layer with an acoustic impedance lower than the given acoustic impedance.
9. The method of claim 1 , further comprising encapsulating the mass bias, first and second resonator electrodes, piezoelectric layer, and alternating dielectric layers with a plastic.
10. The method of claim 9 wherein the plastic includes a plastic mold fill.
11. A method of forming a piezoelectric resonator with an acoustic Bragg reflector, comprising:
depositing a first set of alternating dielectric layers of lower and higher acoustic impedance materials over a substrate;
depositing a first resonator electrode over the first set of alternating dielectric layers;
depositing a piezoelectric layer over the first resonator electrode;
depositing a second resonator electrode over the piezoelectric layer;
depositing a mass bias over the first and second resonator electrodes;
depositing a second set of alternating dielectric layers of lower and higher acoustic impedance between the second resonator electrode and the mass bias; and
forming an active heater layer between the second set of alternating layers and the mass bias.
12. The method of claim 11 further comprising depositing electrical contact pads of a same material as the mass bias for electrical contact to the first and second electrodes, the depositing the electrical contact pads being concurrent with depositing the mass bias.
13. The method of claim 11 wherein the mass bias comprises aluminum copper.
14. The method of claim 11 wherein the mass bias is approximately 1 micron thick.
15. The method of claim 11 wherein depositing the alternating dielectric layers comprises first depositing a first layer with a given acoustic impedance, then depositing a second layer with an acoustic impedance lower than the given acoustic impedance.
16. The method of claim 11 wherein a top-most layer of the first set of alternating dielectric layers is a layer of lower acoustic impedance material, and a bottom-most layer of the second set of alternating dielectric layers is a layer of lower acoustic impedance material.
17. The method of claim 11 , further comprising forming an overcoat layer between the second set of alternating dielectric layers and the mass bias.
18. The method of claim 11 , further comprising encapsulating the mass bias, first and second resonator electrodes, piezoelectric layer, and the first and second sets of alternating dielectric layers with a plastic.
19. The method of claim 18 wherein the plastic includes a plastic mold fill.
20. A method of forming a piezoelectric resonator with an acoustic Bragg reflector, comprising:
depositing a first set of alternating dielectric layers of lower and higher acoustic impedance materials over a substrate;
depositing a first resonator electrode over the alternating dielectric layers;
depositing a piezoelectric layer over the first resonator electrode;
depositing a second resonator electrode over the piezoelectric layer;
depositing a mass bias over first and second resonator electrodes such that the mass bias is electrically insulated from the first and second resonator electrodes;
depositing a second set of alternating dielectric layers of lower and higher acoustic impedance materials between the second resonator electrode and the mass bias; and
forming an overcoat layer between the second set of alternating dielectric layers and the mass bias.