Seamless mold manufacturing method

1. A seamless mold manufacturing method comprising:

forming a thermal reactive resist layer on a cylindrical-shaped mold;

forming a fine mold pattern on the thermal reactive resist layer using a laser;

forming an etching layer on the cylindrical-shaped mold before forming the thermal reactive resist layer; and

etching the etching layer using the fine mold pattern as a mask,

wherein the thermal reactive resist layer is comprised of a thermal reactive resist material having a property of reacting in at least a predetermined light intensity in a light intensity distribution within a spot diameter of the laser,

wherein, when the etching layer is etched, a dry etching apparatus is used in which a cylindrical counter electrode is arranged in a position opposed to the cylindrical-shaped mold in a vacuum chamber, a space being defined between the cylindrical counter electrode and an outer periphery of a curved surface of the cylindrical-shaped mold, and

wherein an incident direction of the etching extends from the curved surface toward a center of the cylindrical-shaped mold, the incident direction consisting of a direction perpendicular to a tangential direction of the surface of the cylindrical-shaped mold.

2. A seamless mold manufacturing method comprising:

forming a thermal reactive resist layer on a cylindrical-shaped mold;

forming a fine mold pattern on the thermal reactive resist layer using a laser;

forming an etching layer on the cylindrical-shaped mold before forming the thermal reactive resist layer; and

etching the etching layer using the fine mold pattern as a mask,

wherein the thermal reactive resist layer is comprised of a thermal reactive resist material having a temperature distribution including a region where the resist reacts at a predetermined temperature or more within a spot diameter of the laser,

wherein, when the etching layer is etched, a dry etching apparatus is used in which a cylindrical counter electrode is arranged in a position opposed to the cylindrical-shaped mold in a vacuum chamber, a space being defined between the cylindrical counter electrode and an outer periphery of a curved surface of the cylindrical-shaped mold, and

wherein an incident direction of the etching extends from the curved surface toward a center of the cylindrical-shaped mold, the incident direction consisting of a direction perpendicular to a tangential direction of the surface of the cylindrical-shaped mold.

3. The seamless mold manufacturing method according to claim 2 , further comprising:

removing the fine mold pattern.

4. The seamless mold manufacturing method according to claim 2 , wherein the thermal reactive resist is an organic resist or an inorganic resist.

5. The seamless mold manufacturing method according to claim 2 , wherein the thermal reactive resist is comprised of an imperfect oxide of an element selected from the group consisting of transition metals and group-XII to group-XV elements, and a boiling point of a primary fluoride of the element is 200° C. or more.

6. The seamless mold manufacturing method according to claim 5 , wherein the transition metals are elements selected from the group consisting of Ti, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Rh, Ag, Hf, Ta and Au.

7. The seamless mold manufacturing method according to claim 5 or 6 , wherein the group-XII to group-XV elements are elements selected from the group consisting of Al, Zn, Ga, In, Sn, Sb, Pb and Bi.

8. The seamless mold manufacturing method according to claim 5 , wherein the transition metals are elements selected from the group consisting of Ti, Cr, Mn, Co, Cu, Nb, Ag, Ta and Au, and the group-XII to group-XV elements are elements selected from the group consisting of Sn, Pb and Bi.

9. The seamless mold manufacturing method according to claim 3 , wherein the etching layer is comprised of a material selected from the group consisting of Si, Ta, and oxides, nitrides and carbides of Si and Ta.

10. The seamless mold manufacturing method according to claim 2 , wherein a film thickness of the thermal reactive resist layer has a fluctuation range of ±20 nm or less in a circumference of the sleeve in the film thickness.

11. The seamless mold manufacturing method according to claim 2 , wherein the thermal reactive resist layer is comprised of at least two layers.

12. The seamless mold manufacturing method according to claim 3 , further comprising:

forming a heat absorption layer above the etching layer.

13. The seamless mold manufacturing method according to claim 12 , wherein forming the heat absorption layer on or under the etching layer is before forming the thermal reactive resist layer on the etching layer.

14. The seamless mold manufacturing method according to claim 3 , further comprising:

forming a heat insulating layer on the cylindrical-shaped mold before forming the etching layer on the cylindrical-shaped mold.

15. The seamless mold manufacturing method according to claim 2 , wherein a method of forming any one of the thermal reactive resist layer, the etching layer and the heat absorption layer is formed by a sputtering method, a deposition method or a CVD method.

16. The seamless mold manufacturing method according to claim 2 , wherein a beam shape of the laser is an elliptical shape in exposure using the laser.

17. The seamless mold manufacturing method according to claim 1 , wherein

an electric field is formed, between the cylindrical-shaped mold and the cylindrical counter electrode, in a direction toward a center of the cylindrical-shaped mold and perpendicular to a tangential direction of the surface of the cylindrical-shaped mold.

18. The seamless mold manufacturing method according to claim 17 , wherein

the light intensity of the laser defines a Gaussian distribution, and the temperature of the thermal reactive resist layer, onto which laser light is irradiated by the laser, defines the same Gaussian distribution as that defined by the light intensity of the laser.

19. The seamless mold manufacturing method according to claim 18 , wherein

the laser is semiconductor laser.