Acoustic resonator device with an electrically-isolated layer of high-acoustic-impedance material interposed therein
An acoustic resonator device includes a bottom electrode disposed on a substrate over an air cavity, a first piezoelectric material layer disposed on the bottom electrode, an electrically-isolated layer of high-acoustic-impedance material disposed on the first piezoelectric material layer, a second piezoelectric material layer disposed on the electrically-isolated layer of high-acoustic impedance material, and a top electrode disposed on the second piezoelectric material layer, where an overlap among the top electrode, the first piezoelectric material layer, the electrically-isolated layer of high-acoustic-impedance material, the second piezoelectric material layer, and the bottom electrode over the air cavity defines a main membrane region.
1. An acoustic resonator device, comprising:
a bottom electrode disposed on a substrate over an air cavity;
a first piezoelectric material layer disposed on the bottom electrode;
an electrically-isolated layer of high-acoustic-impedance material disposed on the first piezoelectric material layer;
a second piezoelectric material layer disposed on the electrically-isolated layer of high-acoustic-impedance material;
a top electrode comprising at least one air wing disposed on the first piezoelectric material layer, wherein an overlap among the top electrode, the first piezoelectric material layer, the second piezoelectric material layer, the electrically-isolated layer of high-acoustic-impedance material, the bottom electrode, and the air cavity defines a main membrane region, and at least one air bridge exists in the top electrode, wherein the at least one air wing is disposed opposite the air bridge;
a first metal frame on a top surface of the top electrode outside of a central region of the top electrode, the first metal frame having a first side and a second side, the first side being opposite the second side, the first metal frame having a thickness that is greater than a thickness of the top electrode in the central region of the top electrode, the first side of the first metal frame having a inner edge that is adjacent an outer edge of the central region of the top electrode and having and outer edge that is a distance away from the inner edge of the first side of the first metal frame, the second side of the first metal frame having an inner edge that is adjacent an outer edge of the central region of the top electrode and having an outer edge that is a distance away from the inner edge of the second side of the first metal frame; and
a temperature compensating layer disposed within the bottom electrode, or within the top electrode.
2. The acoustic resonator device of claim 1 , wherein during operation the acoustic resonator device operates at a thickness extensional (TE) resonant frequency, f TE , and has a thickness shear (TS) resonant frequency, f TS , and wherein f TEn is greater than f TSn+1 , where n is an order of a resonance.
3. The acoustic resonator device of claim 1 , further comprising:
a second metal frame on the top surface of the top electrode, the second metal frame having a thickness that is greater than a thickness of the first metal frame, the second metal frame having a first side and a second side, the first side of the second metal frame having an inner edge that is adjacent the outer edge of the first side of the first metal frame and having an outer edge that is a distance away from the inner edge of the first side of the second metal frame, the second side of the second metal frame having an inner edge that is adjacent the outer edge of the second side of the first metal frame and having an outer edge that is a distance away from the inner edge of the second side of the second metal frame.
4. The acoustic resonator device of claim 3 , wherein the second metal frame has a thickness that is greater than the thickness of the first metal frame.
5. The acoustic resonator device of claim 1 , wherein the air bridge is adjacent the outer edge of the second side of the first metal frame.
6. The acoustic resonator device of claim 1 , wherein the air wing is adjacent the outer edge of the first side of the first metal frame.
7. The acoustic resonator device of claim 1 , wherein the temperature compensating layer comprises boron silicate glass (BSG).
8. The acoustic resonator device of claim 1 , wherein the temperature compensating layer comprises tetraethyl orthosilicate (TEOS).
9. The acoustic resonator device of claim 1 , wherein the temperature compensating layer overlaps the main membrane region.
10. The acoustic resonator device of claim 9 , wherein the temperature compensating layer overlaps the air bridge and the air wing.
11. The acoustic resonator device of claim 1 , wherein the temperature compensating layer comprises boron silicate glass (BSG).
12. The acoustic resonator device of claim 1 , wherein the temperature compensating layer comprises tetraethyl orthosilicate (TEOS).
13. The acoustic resonator device of claim 1 , wherein the temperature compensating layer overlaps the main membrane region.
14. The acoustic resonator device of claim 13 , wherein the temperature compensating layer extends into the air bridge and the air wing.
15. An acoustic resonator device, comprising:
a bottom electrode disposed on a substrate over an air cavity;
a temperature compensating layer disposed within the bottom electrode;
a first piezoelectric material layer disposed on the bottom electrode;
an electrically-isolated layer of high-acoustic-impedance material disposed on the first piezoelectric material layer;
a second piezoelectric material layer disposed on the electrically-isolated layer of high-acoustic-impedance material; and
a top electrode disposed on the first piezoelectric material layer, wherein an overlap among the top electrode, the first piezoelectric material layer, the second piezoelectric material layer, the electrically-isolated layer of high-acoustic-impedance material, the bottom electrode, and the air cavity defines a main membrane region.
16. The acoustic resonator device of claim 15 , wherein the temperature compensating layer comprises boron silicate glass (BSG).
17. The acoustic resonator device of claim 15 , wherein the temperature compensating layer comprises tetraethyl orthosilicate (TEOS).
18. The acoustic resonator device of claim 15 , wherein the temperature compensating layer overlaps the main membrane region.
19. An acoustic resonator device, comprising:
a bottom electrode disposed on a substrate over an air cavity;
a first piezoelectric material layer disposed on the bottom electrode;
an electrically-isolated layer of high-acoustic-impedance material disposed on the first piezoelectric material layer;
a second piezoelectric material layer disposed on the electrically-isolated layer of high-acoustic-impedance material;
a top electrode disposed on the first piezoelectric material layer, wherein an overlap among the top electrode, the first piezoelectric material layer, the second piezoelectric material layer, the electrically-isolated layer of high-acoustic-impedance material, the bottom electrode, and the air cavity defines a main membrane region; and
a temperature compensating layer disposed within the top electrode.
20. The acoustic resonator device of claim 19 , wherein the temperature compensating layer comprises boron silicate glass (BSG).
21. The acoustic resonator device of claim 19 , wherein the temperature compensating layer comprises tetraethyl orthosilicate (TEOS).
22. The acoustic resonator device of claim 19 , wherein the temperature compensating layer overlaps the main membrane region.